公开(公告)号：US4366493A

公开(公告)日：1982-12-28

申请号：US161611

申请日：1980-06-20

申请人： Norman Braslau ,  John L. Freeouf ,  George D. Pettit ,  Hans S. Rupprecht ,  Jerry M. Woodall

发明人： Norman Braslau ,  John L. Freeouf ,  George D. Pettit ,  Hans S. Rupprecht ,  Jerry M. Woodall

IPC分类号： H01L29/80 ,  H01L21/28 ,  H01L21/331 ,  H01L29/06 ,  H01L29/201 ,  H01L29/43 ,  H01L29/45 ,  H01L29/73 ,  H01L29/772 ,  H01L29/86 ,  H01L27/12

CPC分类号： H01L29/86 ,  H01L29/201 ,  H01L29/452 ,  H01L29/772

摘要： A semiconductor device of the ballistic type, wherein the carrier transport in the body of the device from one electrode to the other takes place essentially free of collisions, is fabricated with a semiconductor body having a long mean-free path, a body width between ohmic electrodes that is less than or equal to the product of the velocity of a carrier and the time to a collision, but more than the distance that will permit quantum mechanical tunnelling, an impressed voltage less than required for an intervalley carrier transition and having the ohmic external contact on each surface of the body free of any barrier to carrier flow. A ballistic type triode device is provided with a current modulating electrode included within the body of the device. The triode device body is of n type conductivity gallium arsenide containing a zinc doped p type conductivity gallium arsenide current modulating inclusion in the body and having, as at least one ohmic external contact, a graded bandgap indium gallium arsenide region.

摘要翻译： 一种防弹型半导体器件，其中将器件本体中的载体从一个电极输送至另一个电极的载体基本上没有碰撞发生，其半导体本体具有长的无平均通路，欧姆体之间的体宽 电极小于或等于载体速度与碰撞时间的乘积，但大于允许量子力学隧道的距离，外加电压小于间隔载波转换所需的电压，并具有欧姆 身体每个表面上的外部接触没有载体流动的任何障碍。 弹道式三极管装置设置有包括在装置主体内的电流调制电极。 三极管器件本体是n型导电性砷化镓，其含有锌掺杂的p型导电砷化镓电流，其调节包含在体内并具有作为至少一个欧姆外部接触的梯度带隙铟镓砷区域。

公开(公告)号：US4605893A

公开(公告)日：1986-08-12

申请号：US647785

申请日：1984-09-06

申请人： Norman Braslau

发明人： Norman Braslau

IPC分类号： G01R33/20 ,  G01N24/10 ,  G01R27/04 ,  G01R31/302 ,  G01R33/60

CPC分类号： G01R31/302 ,  G01R27/04

摘要： Absolute electrical parameter values using reflected microwaves are achieved through measurement of a sample that completely fills the cross section of the waveguide. A test sample holder for a wafer shaped sample employs a choke flange type plate and a backing plate for the wafer. Semiconductor sheet resistivity and mobility values are measured.

摘要翻译： 使用反射微波的绝对电参数值通过测量完全填充波导截面的样品来实现。 用于晶片形样品的测试样品保持器采用扼流法兰型板和用于晶片的背板。 测量半导体薄层电阻率和迁移率值。