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    ENHANCEMENT OF ELECTROLYTE HYDRODYNAMICS FOR EFFICIENT MASS TRANSFER DURING ELECTROPLATING
    1.
    发明申请
    ENHANCEMENT OF ELECTROLYTE HYDRODYNAMICS FOR EFFICIENT MASS TRANSFER DURING ELECTROPLATING 审中-公开
    电解液中电解液动力学的有效传递的改进

    公开(公告)号：US20170029973A1

    公开(公告)日：2017-02-02

    申请号：US15291543

    申请日：2016-10-12

    申请人： Novellus Systems, Inc.

    发明人： Steven T. Mayer ,  Bryan L. Buckalew ,  Haiying Fu ,  Thomas Ponnuswamy ,  Hilton Diaz Camilo ,  Robert Rash ,  David W. Porter

    IPC分类号： C25D21/12 ,  C25D7/12 ,  C25D17/00 ,  C25D5/08

    CPC分类号： C25D21/12 ,  C25D5/08 ,  C25D7/12 ,  C25D17/001 ,  C25D17/002

    摘要： The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet. These combined flow paths result in improved plating uniformity.

    摘要翻译： 本文的实施例涉及将一种或多种材料电镀到衬底上的方法和装置。 在许多情况下，材料是金属，并且衬底是半导体晶片，尽管实施例不限于此。 通常，这里的实施例利用位于基板附近的通道板，通过通道板在底部形成交叉流动歧管，顶部由衬底限定，并在侧面由横流限制环形成。 在电镀期间，流体通过通道板的通道向上穿过十字流量歧管，并横向穿过位于交叉流限制环一侧的横流侧入口。 流动路径在交叉流动歧管中组合并且在与横流入口相对的横向流出口处出口。 这些组合的流动路径导致改善的电镀均匀性。

    Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating
    4.
    发明授权
    Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating 有权
    电镀液中电解质流体动力学的有效传播

    公开(公告)号：US09523155B2

    公开(公告)日：2016-12-20

    申请号：US14103395

    申请日：2013-12-11

    申请人： Novellus Systems, Inc.

    发明人： Steven T. Mayer ,  Bryan L. Buckalew ,  Haiying Fu ,  Thomas Ponnuswamy ,  Hilton Diaz Camilo ,  Robert Rash ,  David W. Porter

    IPC分类号： C25D17/00 ,  C25D21/22 ,  G01N27/333 ,  C25D5/08 ,  C25D7/12 ,  C25D21/12

    CPC分类号： C25D21/12 ,  C25D5/08 ,  C25D7/12 ,  C25D17/001 ,  C25D17/002

    摘要： The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet. These combined flow paths result in improved plating uniformity.

    摘要翻译： 本文的实施例涉及将一种或多种材料电镀到衬底上的方法和装置。 在许多情况下，材料是金属，并且衬底是半导体晶片，尽管实施例不限于此。 通常，这里的实施例利用位于基板附近的通道板，通过通道板在底部形成交叉流动歧管，顶部由衬底限定，并在侧面由横流限制环形成。 在电镀期间，流体通过通道板的通道向上穿过十字流量歧管，并横向穿过位于交叉流限制环一侧的横流侧入口。 流动路径在交叉流动歧管中组合并且在与横流入口相对的横向流出口处出口。 这些组合的流动路径导致改善的电镀均匀性。

    ENHANCEMENT OF ELECTROLYTE HYDRODYNAMICS FOR EFFICIENT MASS TRANSFER DURING ELECTROPLATING
    7.
    发明申请
    ENHANCEMENT OF ELECTROLYTE HYDRODYNAMICS FOR EFFICIENT MASS TRANSFER DURING ELECTROPLATING 有权
    电解液中电解液动力学的有效传递的改进

    公开(公告)号：US20140183049A1

    公开(公告)日：2014-07-03

    申请号：US14103395

    申请日：2013-12-11

    申请人： Novellus Systems, Inc.

    发明人： Steven T. Mayer ,  Bryan L. Buckalew ,  Haiying Fu ,  Thomas Ponnuswamy ,  Hilton Diaz Camilo ,  Robert Rash ,  David W. Porter

    IPC分类号： C25D5/08 ,  C25D17/00

    CPC分类号： C25D21/12 ,  C25D5/08 ,  C25D7/12 ,  C25D17/001 ,  C25D17/002

    摘要： The embodiments herein relate to methods and apparatus for electroplating one or more materials onto a substrate. In many cases the material is a metal and the substrate is a semiconductor wafer, though the embodiments are no so limited. Typically, the embodiments herein utilize a channeled plate positioned near the substrate, creating a cross flow manifold defined on the bottom by the channeled plate, on the top by the substrate, and on the sides by a cross flow confinement ring. During plating, fluid enters the cross flow manifold both upward through the channels in the channeled plate, and laterally through a cross flow side inlet positioned on one side of the cross flow confinement ring. The flow paths combine in the cross flow manifold and exit at the cross flow exit, which is positioned opposite the cross flow inlet. These combined flow paths result in improved plating uniformity.

    摘要翻译： 本文的实施例涉及将一种或多种材料电镀到基底上的方法和装置。 在许多情况下，材料是金属，并且衬底是半导体晶片，尽管实施例不限于此。 通常，这里的实施例利用位于基板附近的通道板，通过通道板在底部形成交叉流动歧管，顶部由衬底限定，并在侧面由横流限制环形成。 在电镀期间，流体通过通道板的通道向上穿过十字流量歧管，并横向穿过位于交叉流限制环一侧的横流侧入口。 流动路径在交叉流动歧管中组合并且在与横流入口相对的横向流出口处出口。 这些组合的流动路径导致改善的电镀均匀性。