公开(公告)号：US11411375B2

公开(公告)日：2022-08-09

申请号：US16637698

申请日：2018-08-21

申请人： OSRAM OLED GmbH

发明人： Alfred Lell ,  Muhammad Ali ,  Bernhard Stojetz ,  Harald Koenig

IPC分类号： H01S5/40 ,  H01S5/024 ,  H01S5/042 ,  H01S5/323 ,  H01S5/0234 ,  H01S5/22

摘要： An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.

公开(公告)号：US11004876B2

公开(公告)日：2021-05-11

申请号：US16528307

申请日：2019-07-31

申请人： OSRAM OLED GMBH

发明人： Christoph Eichler ,  Andre Somers ,  Harald Koenig ,  Bernhard Stojetz ,  Andreas Loeffler ,  Alfred Lell

IPC分类号： H01L21/66 ,  H01L27/12 ,  H01L21/02 ,  H01L21/20 ,  H01L21/762 ,  H01S5/22 ,  H01L33/02 ,  H01L33/00 ,  H01L21/268 ,  H01L21/3105 ,  H01L21/324 ,  H01S5/20 ,  H01S5/223 ,  H01L33/08 ,  H01L33/12

摘要： A method for producing a semiconductor chip (100) is provided, in which, during a growth process for growing a first semiconductor layer (1), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer (1), such that a lateral variation of a material composition of the first semiconductor layer (1) is produced. A semiconductor chip (100) is additionally provided.

公开(公告)号：US20200295534A1

公开(公告)日：2020-09-17

申请号：US16637698

申请日：2018-08-21

申请人： OSRAM OLED GmbH

发明人： Alfred Lell ,  Muhammad Ali ,  Bernhard Stojetz ,  Harald Koenig

IPC分类号： H01S5/042 ,  H01S5/40 ,  H01S5/323 ,  H01S5/024

摘要： An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.

公开(公告)号：US20220311219A1

公开(公告)日：2022-09-29

申请号：US17807272

申请日：2022-06-16

申请人： OSRAM OLED GmbH

发明人： Alfred Lell ,  Muhammad Ali ,  Bernhard Stojetz ,  Harald Koenig

IPC分类号： H01S5/40 ,  H01S5/024 ,  H01S5/042 ,  H01S5/323 ,  H01S5/0234

摘要： An edge emitting laser bar is disclosed. In an embodiment an edge-emitting laser bar includes an AlInGaN-based semiconductor layer sequence having a contact side and an active layer configured to generate laser radiation, a plurality of individual emitters arranged next to each other and spaced apart from one another in a lateral transverse direction, each emitter configured to emit laser radiation and a plurality of contact elements arranged next to each other and spaced apart from one another in the lateral transverse direction on the contact side for making electrical contact with the individual emitters, each contact element being assigned to an individual emitter, wherein each contact element is electrically conductively coupled to the semiconductor layer sequence via a contiguous contact region of the contact side so that a current flow between the semiconductor layer sequence and the contact element is possible via the contact region.