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1.发明公开公开(公告)号：US20230223495A1
公开(公告)日：2023-07-13
申请号：US18180992
申请日：2023-03-09
Applicant: OSRAM OLED GmbH
Inventor： Sebastian PICKEL , Johannes SARIC , Wolfgang SCHMID , Anna STROZECKA-ASSIG , Johannes BAUR
CPC classification number: H01L33/38 , H01L33/42 , H01L33/46 , H01L33/387 , H01L33/405 , H01L33/30 , H01L2933/0016 , H01L2933/0025
Abstract: In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.
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2.发明公开
公开(公告)号：US20240274753A1
公开(公告)日：2024-08-15
申请号：US18619924
申请日：2024-03-28
Applicant: OSRAM OLED GmbH
Inventor： Sebastian PICKEL , Johannes SARIC , Wolfgang SCHMID , Anna STROZECKA-ASSIG , Johannes BAUR
CPC classification number: H01L33/38 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/46 , H01L33/30 , H01L2933/0016 , H01L2933/0025
Abstract: In one embodiment, the optoelectronic semiconductor chip includes a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization.
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3.发明申请
公开(公告)号：US20210005784A1
公开(公告)日：2021-01-07
申请号：US16980910
申请日：2019-03-14
Applicant: OSRAM OLED GmbH
Inventor： Sebastian PICKEL , Johannes SARIC , Wolfgang SCHMID , Anna STROZECKA-ASSIG , Johannes BAUR
Abstract: In one embodiment, the optoelectronic semiconductor chip (1) comprises a semiconductor layer sequence (2) with an active zone (23) for generating a radiation. The semiconductor layer sequence (2) is based on AlInGaP and/or on AlInGaAs. A metal mirror (3) for the radiation is located on a rear side (12) of the semiconductor layer sequence (2) opposite a light extraction side (10). A protective metallization (6) is applied directly to a side of the metal mirror (3) facing away from the semiconductor layer sequence (2). An adhesion promoting layer (7) is located directly on a side of the metal mirror (3) facing the semiconductor layer sequence (2). The adhesion promoting layer (7) is an encapsulation layer for the metal mirror (3), so that the metal mirror (3) is encapsulated at least at one outer edge by the adhesion promoting layer (7) together with the protective metallization (6).
