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公开(公告)号：US20170324001A1
公开(公告)日：2017-11-09
申请号：US15656169
申请日：2017-07-21
发明人： Matthias Peter , Tobias Meyer , Alexander Walter , Tetsuya Taki , Juergen Off , Rainer Butendeich , Joachim Hertkorn
IPC分类号： H01L33/06 , H01L33/04 , H01L33/38 , H01L33/32 , H01L33/00 , H01L33/24 , H01L33/14 , H01L33/22
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/04 , H01L33/14 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/382 , H01L2224/16225 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.
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公开(公告)号：US09761758B2
公开(公告)日：2017-09-12
申请号：US14784135
申请日：2014-04-17
发明人： Tobias Meyer , Matthias Peter , Jürgen Off , Alexander Walter , Tobias Gotschke , Christian Leirer
CPC分类号： H01L33/325 , H01L33/0025 , H01L33/025 , H01L33/12 , H01L33/22
摘要： An optoelectronic semiconductor component includes a layer sequence including a p-doped layer, an n-doped layer and an active zone that generates electromagnetic radiation arranged between the n-doped layer and the p-doped layer, wherein the n-doped layer includes at least GaN, an interlayer is arranged in the n-doped layer, wherein the interlayer includes AlxGa1-xN, wherein 0
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公开(公告)号：US20160079476A1
公开(公告)日：2016-03-17
申请号：US14784135
申请日：2014-04-17
发明人： Tobias Meyer , Matthias Peter , Jürgen Off , Alexander Walter , Tobias Gotschke , Christian Leirer
CPC分类号： H01L33/325 , H01L33/0025 , H01L33/025 , H01L33/12 , H01L33/22
摘要： An optoelectronic semiconductor component includes a layer sequence including a p-doped layer, an n-doped layer and an active zone that generates electromagnetic radiation arranged between the n-doped layer and the p-doped layer, wherein the n-doped layer includes at least GaN, an interlayer is arranged in the n-doped layer, wherein the interlayer includes AlxGa1-xN, wherein 0
摘要翻译： 光电子半导体部件包括层序列，其包括p掺杂层，n掺杂层和产生布置在n掺杂层和p掺杂层之间的电磁辐射的有源区，其中n掺杂层包括在 在n掺杂层中布置了最小的GaN，中间层，其中中间层包括Al x Ga 1-x N，其中0
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公开(公告)号：US20170338217A1
公开(公告)日：2017-11-23
申请号：US15671772
申请日：2017-08-08
发明人： Rainer Butendeich , Alexander Walter , Matthias Peter , Tobias Meyer , Tetsuya Taki , Hubert Maiwald
IPC分类号： H01L27/02 , H01L31/0236 , H01L33/32 , H01L27/15 , H01L33/02 , H01L31/0352 , H01L31/0304 , H01L33/06 , H01L33/08 , H01L33/24
CPC分类号： H01L27/0248 , H01L27/15 , H01L31/02363 , H01L31/03044 , H01L31/035236 , H01L33/02 , H01L33/06 , H01L33/08 , H01L33/24 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a first semiconductor layer sequence having a plurality of microdiodes, and a second semiconductor layer sequence having an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.
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公开(公告)号：US20160020201A1
公开(公告)日：2016-01-21
申请号：US14686364
申请日：2015-04-14
发明人： Rainer Butendeich , Alexander Walter , Matthias Peter , Tobias Meyer , Tetsuya Taki , Hubert Maiwald
IPC分类号： H01L27/02 , H01L33/24 , H01L31/0304 , H01L33/08 , H01L31/0352 , H01L31/0236 , H01L33/06 , H01L33/32
CPC分类号： H01L27/0248 , H01L27/15 , H01L31/02363 , H01L31/03044 , H01L31/035236 , H01L33/02 , H01L33/06 , H01L33/08 , H01L33/24 , H01L33/32 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic semiconductor chip has a first semiconductor layer sequence which comprises a multiplicity of microdiodes, and a second semiconductor layer sequence which comprises an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.
摘要翻译： 光电子半导体芯片具有包括多个微二极管的第一半导体层序列和包含有源区的第二半导体层序列。 第一半导体层序列和第二半导体层序列基于氮化物化合物半导体材料，第一半导体层序列在生长方向上位于第一半导体层序列之前，并且微二极管形成用于有源区的ESD保护。
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公开(公告)号：US10418355B2
公开(公告)日：2019-09-17
申请号：US15671772
申请日：2017-08-08
发明人： Rainer Butendeich , Alexander Walter , Matthias Peter , Tobias Meyer , Tetsuya Taki , Hubert Maiwald
IPC分类号： H01L27/02 , H01L33/02 , H01L31/0236 , H01L31/0304 , H01L31/0352 , H01L33/06 , H01L33/08 , H01L33/32 , H01L27/15 , H01L33/24
摘要： An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a first semiconductor layer sequence having a plurality of microdiodes, and a second semiconductor layer sequence having an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.
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公开(公告)号：US10388828B2
公开(公告)日：2019-08-20
申请号：US15656169
申请日：2017-07-21
发明人： Matthias Peter , Tobias Meyer , Alexander Walter , Tetsuya Taki , Juergen Off , Rainer Butendeich , Joachim Hertkorn
IPC分类号： H01L33/14 , H01L33/32 , H01L33/06 , H01L33/04 , H01L33/38 , H01L33/24 , H01L33/00 , H01L33/22
摘要： A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.
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公开(公告)号：US09799797B2
公开(公告)日：2017-10-24
申请号：US15287140
申请日：2016-10-06
发明人： Matthias Peter , Tobias Meyer , Alexander Walter , Tetsuya Taki , Juergen Off , Rainer Butendeich , Joachim Hertkorn
IPC分类号： H01L29/06 , H01L33/06 , H01L33/32 , H01L33/04 , H01L33/14 , H01L33/38 , H01L33/24 , H01L33/00 , H01L33/22
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/04 , H01L33/14 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/382 , H01L2224/16225 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.
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公开(公告)号：US09530931B2
公开(公告)日：2016-12-27
申请号：US14662037
申请日：2015-03-18
发明人： Matthias Peter , Tobias Meyer , Alexander Walter , Tetsuya Taki , Juergen Off , Rainer Butendeich , Joachim Hertkorn
IPC分类号： H01L29/06 , H01L33/06 , H01L33/04 , H01L33/14 , H01L33/24 , H01L33/32 , H01L33/22 , H01L33/38
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/04 , H01L33/14 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/382 , H01L2224/16225 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak.
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公开(公告)号：US09502611B2
公开(公告)日：2016-11-22
申请号：US14430198
申请日：2013-09-24
发明人： Christian Leirer , Tobias Meyer , Matthias Peter , Juergen Off , Joachim Hertkorn , Andreas Loeffler , Alexander Walter , Dario Schiavon
CPC分类号： H01L33/06 , H01L33/0025 , H01L33/007 , H01L33/0075 , H01L33/025 , H01L33/14 , H01L33/24 , H01L33/32 , H01L33/58
摘要： The invention concerns an optoelectronic component comprising a layer structure with a light-active layer. In a first lateral region the light-active layer has a higher density of V-defects than in a second lateral region.
摘要翻译： 本发明涉及包含具有光活性层的层结构的光电子部件。 在第一横向区域中，光活性层具有比在第二横向区域中更高的V缺陷密度。
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