Method for Producing a Plurality of Components, and Component

    公开(公告)号:US20180358509A1

    公开(公告)日:2018-12-13

    申请号:US15779251

    申请日:2016-11-30

    摘要: A method for producing a plurality of components and a component are disclosed. In an embodiment the method includes providing a carrier composite comprising a base body and a planar connecting surface, providing a wafer composite comprising a semiconductor body composite and a planar contact surface, connecting the wafer composite to the carrier composite thereby forming a joint composite so that the planar contact surface and the planar connecting surface are joined forming a joint boundary surface. The method further includes reducing inner mechanical stress in the joint composite so that a material of the carrier composite is removed in places, wherein the joint composite is thermally treated in order to form a permanent mechanically-stable connection between the wafer composite and the carrier composite, and wherein reducing inner stress is effected prior to the thermal treatment.

    Laser Diode Chip Having Coated Laser Facet
    2.
    发明申请
    Laser Diode Chip Having Coated Laser Facet 审中-公开
    激光二极管芯片涂有激光刻面

    公开(公告)号:US20160365699A1

    公开(公告)日:2016-12-15

    申请号:US15118041

    申请日:2015-02-16

    IPC分类号: H01S5/028 H01S5/024

    摘要: A laser diode chip has a laser facet, which includes a coating. The coating includes an inorganic layer and an organic layer. In one example, the coating has a number of inorganic layers, including a heat-conductive layer. For example, the inorganic layers may form a reflection-increasing or reflection-decreasing layer sequence.

    摘要翻译: 激光二极管芯片具有激光刻面,其包括涂层。 涂层包括无机层和有机层。 在一个实例中,涂层具有许多无机层,包括导热层。 例如,无机层可以形成反射增加或反射减少层序列。

    Method for producing a plurality of components, and component

    公开(公告)号:US10475955B2

    公开(公告)日:2019-11-12

    申请号:US15779251

    申请日:2016-11-30

    摘要: A method for producing a plurality of components and a component are disclosed. In an embodiment the method includes providing a carrier composite comprising a base body and a planar connecting surface, providing a wafer composite comprising a semiconductor body composite and a planar contact surface, connecting the wafer composite to the carrier composite thereby forming a joint composite so that the planar contact surface and the planar connecting surface are joined forming a joint boundary surface. The method further includes reducing inner mechanical stress in the joint composite so that a material of the carrier composite is removed in places, wherein the joint composite is thermally treated in order to form a permanent mechanically-stable connection between the wafer composite and the carrier composite, and wherein reducing inner stress is effected prior to the thermal treatment.

    Method for producing a connection between component parts

    公开(公告)号:US11694977B2

    公开(公告)日:2023-07-04

    申请号:US17046209

    申请日:2019-05-08

    IPC分类号: H01L23/48 H01L23/00

    摘要: In an embodiment a method includes providing the first component part with a partially exposed first insulating layer, a plurality of first through-vias and an exposed first contact layer structured in places and planarized in places, wherein the first through-vias are each laterally enclosed by the first insulating layer, and wherein the first contact layer partially covers the first insulating layer and completely covers the first through-vias; providing the second component part with a partially exposed second insulating layer, a plurality of second through-vias and an exposed second contact layer structured in places and planarized in places, wherein the second through-vias are each laterally enclosed by the second insulating layer, and wherein the second contact layer partially covers the second insulating layer and completely covers the second through-vias and joining the component parts such that the contact layers overlap each other thereby mechanically and electrically connecting the component parts to each other by a direct bonding process at the contact layers.

    Method for Producing a Connection Between Component Parts

    公开(公告)号:US20210035934A1

    公开(公告)日:2021-02-04

    申请号:US17046209

    申请日:2019-05-08

    IPC分类号: H01L23/00

    摘要: In an embodiment a method includes providing the first component part with a partially exposed first insulating layer, a plurality of first through-vias and an exposed first contact layer structured in places and planarized in places, wherein the first through-vias are each laterally enclosed by the first insulating layer, and wherein the first contact layer partially covers the first insulating layer and completely covers the first through-vias; providing the second component part with a partially exposed second insulating layer, a plurality of second through-vias and an exposed second contact layer structured in places and planarized in places, wherein the second through-vias are each laterally enclosed by the second insulating layer, and wherein the second contact layer partially covers the second insulating layer and completely covers the second through-vias and joining the component parts such that the contact layers overlap each other thereby mechanically and electrically connecting the component parts to each other by a direct bonding process at the contact layers.

    Optoelectronic Device and Method
    9.
    发明申请

    公开(公告)号:US20190229240A1

    公开(公告)日:2019-07-25

    申请号:US16256897

    申请日:2019-01-24

    摘要: An optoelectronic device and a method are disclosed. In an embodiment an optoelectronic device includes a semiconductor body having a layer sequence with an active region configured to generate radiation, a first dielectric layer arranged on the layer sequence having a plurality of first areas and a second area, a first contact via in each area of the plurality of first areas for contacting a first side of the active region, a second contact via in the second area for contacting a second side of the active region and a conductive layer comprising a plurality of first regions and a second region surrounding the plurality of first regions and electrically isolated from the plurality of first regions, the conductive layer having a substantially planar surface and being arranged planar onto the plurality of first areas and the second area such that each of the plurality of first regions of the conductive layer is in contact with the first contact via in the respective area of the plurality of first areas and the second region of the conductive layer is in contact with the second contact via of the first dielectric layer.