公开(公告)号：US08476677B2

公开(公告)日：2013-07-02

申请号：US13466565

申请日：2012-05-08

Applicant: Osamu Machida ,  Akio Iwabuchi

Inventor： Osamu Machida ,  Akio Iwabuchi

IPC: H01L29/66

CPC classification number: H01L29/7786 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316

Abstract: An aspect of the present invention inheres in a semiconductor device includes a semiconductor region, a source electrode and a drain electrode, which are provided on a main surface of the semiconductor region, a gate electrode exhibiting normally-off characteristics, the gate electrode being provided above the main surface of the semiconductor region while interposing a p-type material film therebetween, and being arranged between the source electrode and the drain electrode, and a fourth electrode that is provided on the main surface of the semiconductor region, and is arranged between the gate electrode and the drain electrode.

Abstract translation: 本发明的一个方面在半导体器件中包括设置在半导体区域的主表面上的半导体区域，源电极和漏电极，具有常关特性的栅电极，栅电极被设置 在半导体区域的主表面之上，同时在其间插入p型材料膜，并且布置在源电极和漏电极之间;以及第四电极，设置在半导体区域的主表面上，并且布置在 栅电极和漏电极。

公开(公告)号：US20090167411A1

公开(公告)日：2009-07-02

申请号：US12343081

申请日：2008-12-23

Applicant: Osamu Machida ,  Akio Iwabuchi

Inventor： Osamu Machida ,  Akio Iwabuchi

IPC: H03K17/687

CPC classification number: H03K17/6874 ,  H01L27/0605 ,  H01L29/0657 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7787 ,  H01L29/7838 ,  H01L29/812 ,  H01L29/872 ,  H03K17/10 ,  H03K17/567 ,  H03K17/74 ,  H03K2017/6875

Abstract: A device capable of bidirectional on-off switching control of an electric circuit. Included is a normally-on HEMT connected between a pair of terminals of the device. A normally-off MOSFET of relatively low antivoltage strength is connected between the HEMT and one of the pair of terminals, and another similar MOSFET between the HEMT and the other of the terminal pair. A diode is connected in inverse parallel with each MOSFET, and two other diodes are connected between the gate of the HEMT and the pair of terminals respectively. The switching device as a whole is normally off.

Abstract translation: 一种能够对电路进行双向开 - 关切换控制的装置。 包括连接在设备的一对终端之间的通常的HEMT。 HEMT与一对端子之间连接一个具有相对较低抗电压强度的常闭MOSFET，以及HEMT与另一个端子对之间的另一个类似的MOSFET。 二极管与每个MOSFET反并联连接，另外两个二极管分别连接在HEMT的栅极和一对端子之间。 整个开关装置通常关闭。

公开(公告)号：US08421123B2

公开(公告)日：2013-04-16

申请号：US13084777

申请日：2011-04-12

Applicant: Osamu Machida ,  Akio Iwabuchi

Inventor： Osamu Machida ,  Akio Iwabuchi

IPC: H01L29/778

CPC classification number: H01L29/7787 ,  H01L27/0605 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/872

Abstract: A semiconductor device having a transistor and a rectifier includes: a current path; a first main electrode having a rectifying function and arranged on one end of the current path; a second main electrode arranged on the other end of the current path; an auxiliary electrode arranged in a region of the current path between the first main electrode and the second main electrode; a third main electrode arranged on the one end of the current path apart from the first main electrode along a direction intersecting the current path; and a control electrode arranged in a region of the current path between the second main electrode and the third main electrode. The transistor includes the current path, the second main electrode, the third main electrode, and the control electrode. The rectifier includes the current path, the first main electrode, the second main electrode, and the auxiliary electrode.

公开(公告)号：US07852137B2

公开(公告)日：2010-12-14

申请号：US12343081

申请日：2008-12-23

Applicant: Osamu Machida ,  Akio Iwabuchi

Inventor： Osamu Machida ,  Akio Iwabuchi

IPC: H03K17/687

CPC classification number: H03K17/6874 ,  H01L27/0605 ,  H01L29/0657 ,  H01L29/1075 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7787 ,  H01L29/7838 ,  H01L29/812 ,  H01L29/872 ,  H03K17/10 ,  H03K17/567 ,  H03K17/74 ,  H03K2017/6875

Abstract: A device capable of bidirectional on-off switching control of an electric circuit. Included is a normally-on HEMT connected between a pair of terminals of the device. A normally-off MOSFET of relatively low antivoltage strength is connected between the HEMT and one of the pair of terminals, and another similar MOSFET between the HEMT and the other of the terminal pair. A diode is connected in inverse parallel with each MOSFET, and two other diodes are connected between the gate of the HEMT and the pair of terminals respectively. The switching device as a whole is normally off.

Abstract translation: 一种能够对电路进行双向开 - 关切换控制的装置。 包括连接在设备的一对终端之间的通常的HEMT。 HEMT与一对端子之间连接一个具有相对较低抗电压强度的常闭MOSFET，以及HEMT与另一个端子对之间的另一个类似的MOSFET。 二极管与每个MOSFET反并联连接，另外两个二极管分别连接在HEMT的栅极和一对端子之间。 整个开关装置通常关闭。

公开(公告)号：US07825435B2

公开(公告)日：2010-11-02

申请号：US12015067

申请日：2008-01-16

Applicant: Osamu Machida ,  Akio Iwabuchi

Inventor： Osamu Machida ,  Akio Iwabuchi

IPC: H01L29/80

CPC classification number: H01L27/0605 ,  H01L25/18 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7786 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/30107 ,  H03K17/567 ,  H03K17/74 ,  H01L2924/00

Abstract: A silicon-made low-forward-voltage Schottky barrier diode is serially combined with a high-antivoltage-strength high-electron-mobility transistor made from a nitride semiconductor that is wider in bandgap than silicon. The Schottky barrier diode has its anode connected to the gate, and its cathode to the source, of the HEMT. This HEMT is normally on. The reverse voltage withstanding capability of the complete device depends upon that between the drain and gate of the HEMT.

Abstract translation: 硅制造的低电压肖特基势垒二极管与由氮化物半导体制成的高抗电压强度的高电子迁移率晶体管串联组合，氮化物半导体的带隙比硅更宽。 肖特基势垒二极管的阳极连接到HEMT的栅极，其阴极连接到源极。 这个HEMT通常是打开的。 整个器件的反向耐压能力取决于HEMT的漏极和栅极之间的电压。

公开(公告)号：US20120217546A1

公开(公告)日：2012-08-30

申请号：US13466565

申请日：2012-05-08

Applicant: Osamu Machida ,  Akio Iwabuchi

Inventor： Osamu Machida ,  Akio Iwabuchi

IPC: H01L29/778

CPC classification number: H01L29/7786 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316

Abstract: An aspect of the present invention inheres in a semiconductor device includes a semiconductor region, a source electrode and a drain electrode, which are provided on a main surface of the semiconductor region, a gate electrode exhibiting normally-off characteristics, the gate electrode being provided above the main surface of the semiconductor region while interposing a p-type material film therebetween, and being arranged between the source electrode and the drain electrode, and a fourth electrode that is provided on the main surface of the semiconductor region, and is arranged between the gate electrode and the drain electrode.

Abstract translation: 本发明的一个方面在半导体器件中包括设置在半导体区域的主表面上的半导体区域，源电极和漏电极，具有常关特性的栅电极，栅电极被设置 在半导体区域的主表面之上，同时在其间插入p型材料膜，并且布置在源电极和漏电极之间;以及第四电极，设置在半导体区域的主表面上，并且布置在 栅电极和漏电极。

公开(公告)号：US08188515B2

公开(公告)日：2012-05-29

申请号：US12640560

申请日：2009-12-17

Applicant: Osamu Machida ,  Akio Iwabuchi

Inventor： Osamu Machida ,  Akio Iwabuchi

IPC: H01L29/66

CPC classification number: H01L29/7786 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/42316

Abstract: An aspect of the present invention inheres in a semiconductor device includes a semiconductor region, a source electrode and a drain electrode, which are provided on a main surface of the semiconductor region, a gate electrode exhibiting normally-off characteristics, the gate electrode being provided above the main surface of the semiconductor region while interposing a p-type material film therebetween, and being arranged between the source electrode and the drain electrode, and a fourth electrode that is provided on the main surface of the semiconductor region, and is arranged between the gate electrode and the drain electrode.

Abstract translation: 本发明的一个方面在半导体器件中包括设置在半导体区域的主表面上的半导体区域，源电极和漏电极，具有常关特性的栅电极，栅电极被设置 在半导体区域的主表面之上，同时在其间插入p型材料膜，并且布置在源电极和漏电极之间;以及第四电极，设置在半导体区域的主表面上，并且布置在 栅电极和漏电极。

公开(公告)号：US20080191216A1

公开(公告)日：2008-08-14

申请号：US12015067

申请日：2008-01-16

Applicant: Osamu Machida ,  Akio Iwabuchi

Inventor： Osamu Machida ,  Akio Iwabuchi

IPC: H01L27/06

CPC classification number: H01L27/0605 ,  H01L25/18 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7786 ,  H01L2224/32145 ,  H01L2224/32245 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/30107 ,  H03K17/567 ,  H03K17/74 ,  H01L2924/00

Abstract: A silicon-made low-forward-voltage Schottky barrier diode is serially combined with a high-antivoltage-strength high-electron-mobility transistor made from a nitride semiconductor that is wider in bandgap than silicon. The Schottky barrier diode has its anode connected to the gate, and its cathode to the source, of the HEMT. This HEMT is normally on. The reverse voltage withstanding capability of the complete device depends upon that between the drain and gate of the HEMT.

Abstract translation: 硅制造的低电压肖特基势垒二极管与由氮化物半导体制成的高抗电压强度的高电子迁移率晶体管串联组合，氮化物半导体的带隙比硅更宽。 肖特基势垒二极管的阳极连接到HEMT的栅极，其阴极连接到源极。 这个HEMT通常是打开的。 整个器件的反向耐压能力取决于HEMT的漏极和栅极之间的电压。

公开(公告)号：US09056454B2

公开(公告)日：2015-06-16

申请号：US14303858

申请日：2014-06-13

Applicant: Osamu Machida ,  Akira Shimofuku ,  Atsushi Takeuchi

Inventor： Osamu Machida ,  Akira Shimofuku ,  Atsushi Takeuchi

IPC: B41J2/045 ,  H01L41/08 ,  H01L41/09 ,  H01L41/318 ,  H01L41/331

CPC classification number: B41J2/045 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1626 ,  B41J2/1631 ,  B41J2/1646 ,  B41J2202/11 ,  H01L41/0805 ,  H01L41/0973 ,  H01L41/318 ,  H01L41/331 ,  Y10T29/42

Abstract: An actuator includes a base member and an electro-mechanical transducer element including a first electrode, an electro-mechanical transducer film, and a second electrode. Further, the base member includes a thin wall part having a concave shape, the electro-mechanical transducer film is formed in a manner such that a film thickness of the electro-mechanical transducer film is gradually reduced from a center part of the electro-mechanical transducer film to both end parts of the electro-mechanical transducer film in at least one direction crossing a film thickness direction of the electro-mechanical transducer film.

Abstract translation: 致动器包括基部构件和包括第一电极，机电换能器膜和第二电极的机电换能器元件。 此外，基底构件包括具有凹形形状的薄壁部分，机电换能器膜以使得机电换能器膜的膜厚度从电机械的中心部分逐渐减小的方式形成 换能器薄膜在与机电换能器薄膜的膜厚度方向交叉的至少一个方向上的机电换能器薄膜的两端部。

公开(公告)号：US08770725B2

公开(公告)日：2014-07-08

申请号：US13612717

申请日：2012-09-12

Applicant: Yasuhiro Watanabe ,  Osamu Machida ,  Akira Shimofuku ,  Ryo Tashiro

Inventor： Yasuhiro Watanabe ,  Osamu Machida ,  Akira Shimofuku ,  Ryo Tashiro

IPC: B41J2/045 ,  H01L41/22 ,  H04R17/00

CPC classification number: H01L41/0973 ,  B41J2/161 ,  H01L41/318 ,  H01L41/331

Abstract: Disclosed is a method of manufacturing an electromechanical transducer element including a first process of hydrophobizing a first area of an electrode by forming a self-assembled monolayer film; a second process of applying a sol-gel solution onto a predetermined second area of the electrode so as to produce a complex oxide; a third process of producing the complex oxide by calcining the electrode; a fourth process of acid-washing the electrode on which the complex oxide has been produced; a fifth process of hydrophobizing the first area of the acid-washed electrode by forming the self-assembled monolayer film; a sixth process of applying the sol-gel solution onto the predetermined second area; and a seventh process of producing the complex oxide by calcining the electrode.

Abstract translation: 公开了一种制造机电换能器元件的方法，其包括通过形成自组装单层膜来疏水化电极的第一区域的第一工艺; 将溶胶 - 凝胶溶液施加到电极的预定的第二区域上以产生复合氧化物的第二种方法; 通过煅烧电极制造复合氧化物的第三种方法; 对生成了复合氧化物的电极进行酸洗的第四工序; 通过形成自组装单层膜来疏水酸洗电极的第一区域的第五种方法; 将溶胶 - 凝胶溶液施加到预定的第二区域上的第六种方法; 以及通过煅烧电极制造复合氧化物的第七种方法。