公开(公告)号：US09162888B2

公开(公告)日：2015-10-20

申请号：US13449521

申请日：2012-04-18

申请人： Osamu Okada ,  Kota Yokoyama ,  Naoki Inoue

发明人： Osamu Okada ,  Kota Yokoyama ,  Naoki Inoue

IPC分类号： C01B3/38 ,  B01J8/04 ,  B01J19/30 ,  C10L3/08 ,  H01M8/06

CPC分类号： C01B3/382 ,  B01J8/0492 ,  B01J8/0496 ,  B01J19/30 ,  B01J2208/00061 ,  B01J2208/00203 ,  B01J2208/00415 ,  B01J2208/00522 ,  B01J2208/00849 ,  B01J2208/00973 ,  B01J2208/025 ,  B01J2219/0004 ,  B01J2219/30215 ,  B01J2219/30223 ,  C01B2203/0244 ,  C01B2203/085 ,  C01B2203/1047 ,  C01B2203/1058 ,  C01B2203/1247 ,  C01B2203/142 ,  C01B2203/143 ,  C01B2203/1614 ,  C01B2203/1619 ,  C01B2203/169 ,  C10L3/08 ,  H01M8/0612 ,  Y02E60/50 ,  Y02P20/52 ,  Y02P70/56

摘要： The present invention relates to a reformed gas production apparatus that includes a reaction chamber containing a reforming catalyst, a supply route to the reaction chamber, a reformed gas conduction route from the reaction chamber, and a reaction chamber temperature control means that controls a temperature of the reaction chamber. The supply route supplies a fluid that includes a fuel containing a hydrocarbon having at least two carbon atoms, at least one of steam and a carbon dioxide-containing gas, and an oxygen-containing gas. The fuel can be a mixed fuel that includes a plurality of types of hydrocarbons that each have at least two carbon atoms. The reaction chamber temperature control means relates to the thermal decomposition index temperature of the fuel, which defines an upper limit temperature of the reforming reaction region.

摘要翻译： 本发明涉及一种重整气体生产装置，其包括含有重整催化剂的反应室，到反应室的供给路径，来自反应室的重整气体传导路径，以及控制反应室温度控制装置， 反应室。 供应路线提供包含含有至少两个碳原子的烃，含蒸汽和含二氧化碳的气体中的至少一种和含氧气体的燃料的流体。 燃料可以是混合燃料，其包括各自具有至少两个碳原子的多种类型的烃。 反应室温度控制装置涉及限定重整反应区域的上限温度的燃料的热分解指数温度。

公开(公告)号：US20120224997A1

公开(公告)日：2012-09-06

申请号：US13449521

申请日：2012-04-18

申请人： Osamu Okada ,  Kota Yokoyama ,  Naoki Inoue

发明人： Osamu Okada ,  Kota Yokoyama ,  Naoki Inoue

IPC分类号： B01J12/00 ,  G05D23/00

CPC分类号： C01B3/382 ,  B01J8/0492 ,  B01J8/0496 ,  B01J19/30 ,  B01J2208/00061 ,  B01J2208/00203 ,  B01J2208/00415 ,  B01J2208/00522 ,  B01J2208/00849 ,  B01J2208/00973 ,  B01J2208/025 ,  B01J2219/0004 ,  B01J2219/30215 ,  B01J2219/30223 ,  C01B2203/0244 ,  C01B2203/085 ,  C01B2203/1047 ,  C01B2203/1058 ,  C01B2203/1247 ,  C01B2203/142 ,  C01B2203/143 ,  C01B2203/1614 ,  C01B2203/1619 ,  C01B2203/169 ,  C10L3/08 ,  H01M8/0612 ,  Y02E60/50 ,  Y02P20/52 ,  Y02P70/56

摘要： The present invention relates to a reformed gas production apparatus that includes a reaction chamber containing a reforming catalyst, a supply route to the reaction chamber, a reformed gas conduction route from the reaction chamber, and a reaction chamber temperature control means that controls a temperature of the reaction chamber. The supply route supplies a fluid that includes a fuel containing a hydrocarbon having at least two carbon atoms, at least one of steam and a carbon dioxide-containing gas, and an oxygen-containing gas. The fuel can be a mixed fuel that includes a plurality of types of hydrocarbons that each have at least two carbon atoms. The reaction chamber temperature control means relates to the thermal decomposition index temperature of the fuel, which defines an upper limit temperature of the reforming reaction region.

摘要翻译： 本发明涉及一种重整气体生产装置，其包括含有重整催化剂的反应室，到反应室的供给路径，来自反应室的重整气体传导路径，以及控制反应室温度控制装置， 反应室。 供应路线提供包含含有至少两个碳原子的烃，含蒸汽和含二氧化碳的气体中的至少一种和含氧气体的燃料的流体。 燃料可以是混合燃料，其包括各自具有至少两个碳原子的多种类型的烃。 反应室温度控制装置涉及限定重整反应区域的上限温度的燃料的热分解指数温度。

公开(公告)号：US20080263953A1

公开(公告)日：2008-10-30

申请号：US11630929

申请日：2005-06-28

申请人： Osamu Okada ,  Kota Yokoyama ,  Naoki Inoue

发明人： Osamu Okada ,  Kota Yokoyama ,  Naoki Inoue

IPC分类号： B01J8/00 ,  C01B3/38 ,  C01B31/18

CPC分类号： C01B3/382 ,  B01J8/0492 ,  B01J8/0496 ,  B01J19/30 ,  B01J2208/00061 ,  B01J2208/00203 ,  B01J2208/00415 ,  B01J2208/00522 ,  B01J2208/00849 ,  B01J2208/00973 ,  B01J2208/025 ,  B01J2219/0004 ,  B01J2219/30215 ,  B01J2219/30223 ,  C01B2203/0244 ,  C01B2203/085 ,  C01B2203/1047 ,  C01B2203/1058 ,  C01B2203/1247 ,  C01B2203/142 ,  C01B2203/143 ,  C01B2203/1614 ,  C01B2203/1619 ,  C01B2203/169 ,  C10L3/08 ,  H01M8/0612 ,  Y02E60/50 ,  Y02P20/52 ,  Y02P70/56

摘要： The invention provides a method for operating a reformed gas production apparatus with which it is possible to achieve a high reforming efficiency while preventing a drop in catalyst activity due to the deposition of carbon. The reformed gas production method uses a reforming catalyst to reform a fuel that contains a hydrocarbon having at least two carbon atoms to produce a reformed gas that includes methane, hydrogen, and carbon monoxide. With this method, a fluid that includes the fuel, at least one of steam and a carbon dioxide-containing gas, and an oxygen-containing gas, is supplied to a reforming reaction region, and with the thermal decomposition index temperature of the fuel, which is determined by the type and the concentration of the hydrocarbons having at least two carbon atoms that make up the fuel, serving as an upper limit temperature of the reforming reaction region, the fluid is brought into contact with the reforming catalyst to produce the reformed gas.

摘要翻译： 本发明提供了一种操作重整气体生产设备的方法，通过该方法可以实现高重整效率，同时防止由于碳沉积引起的催化剂活性下降。 重整气生产方法使用重整催化剂来重整含有至少两个碳原子的烃的燃料，以产生包括甲烷，氢气和一氧化碳的重整气体。 利用这种方法，将包括燃料，蒸汽和含二氧化碳的气体中的至少一种和含氧气体的流体供应到重整反应区域，并且随着燃料的热分解指数温度， 其由构成燃料的具有至少两个碳原子的烃的类型和浓度确定为重整反应区的上限温度，使流体与重整催化剂接触以产生重整的 加油站。

公开(公告)号：US08486167B2

公开(公告)日：2013-07-16

申请号：US11630929

申请日：2005-06-28

申请人： Osamu Okada ,  Kota Yokoyama ,  Naoki Inoue

发明人： Osamu Okada ,  Kota Yokoyama ,  Naoki Inoue

IPC分类号： B01J8/04

CPC分类号： C01B3/382 ,  B01J8/0492 ,  B01J8/0496 ,  B01J19/30 ,  B01J2208/00061 ,  B01J2208/00203 ,  B01J2208/00415 ,  B01J2208/00522 ,  B01J2208/00849 ,  B01J2208/00973 ,  B01J2208/025 ,  B01J2219/0004 ,  B01J2219/30215 ,  B01J2219/30223 ,  C01B2203/0244 ,  C01B2203/085 ,  C01B2203/1047 ,  C01B2203/1058 ,  C01B2203/1247 ,  C01B2203/142 ,  C01B2203/143 ,  C01B2203/1614 ,  C01B2203/1619 ,  C01B2203/169 ,  C10L3/08 ,  H01M8/0612 ,  Y02E60/50 ,  Y02P20/52 ,  Y02P70/56

摘要： The invention provides a method for operating a reformed gas production apparatus with which it is possible to achieve a high reforming efficiency while preventing a drop in catalyst activity due to the deposition of carbon. The reformed gas production method uses a reforming catalyst to reform a fuel that contains a hydrocarbon having at least two carbon atoms to produce a reformed gas that includes methane, hydrogen, and carbon monoxide. With this method, a fluid that includes the fuel, at least one of steam and a carbon dioxide-containing gas, and an oxygen-containing gas, is supplied to a reforming reaction region, and with the thermal decomposition index temperature of the fuel, which is determined by the type and the concentration of the hydrocarbons having at least two carbon atoms that make up the fuel, serving as an upper limit temperature of the reforming reaction region, the fluid is brought into contact with the reforming catalyst to produce the reformed gas.

摘要翻译： 本发明提供了一种操作重整气体生产设备的方法，通过该方法可以实现高重整效率，同时防止由于碳沉积引起的催化剂活性下降。 重整气生产方法使用重整催化剂来重整含有至少两个碳原子的烃的燃料，以产生包括甲烷，氢气和一氧化碳的重整气体。 利用这种方法，将包括燃料，蒸汽和含二氧化碳的气体中的至少一种和含氧气体的流体供应到重整反应区域，并且随着燃料的热分解指数温度， 其由构成燃料的具有至少两个碳原子的烃的类型和浓度确定为重整反应区的上限温度，使流体与重整催化剂接触以产生重整的 加油站。

公开(公告)号：US08587124B2

公开(公告)日：2013-11-19

申请号：US12156822

申请日：2008-06-04

申请人： Aiko Mizusawa ,  Osamu Okada ,  Takeshi Wakabayashi ,  Ichiro Mihara

发明人： Aiko Mizusawa ,  Osamu Okada ,  Takeshi Wakabayashi ,  Ichiro Mihara

IPC分类号： H01L23/48

CPC分类号： H01L23/5226 ,  H01L21/78 ,  H01L23/296 ,  H01L23/3114 ,  H01L23/3121 ,  H01L23/3171 ,  H01L23/525 ,  H01L23/528 ,  H01L23/53295 ,  H01L23/564 ,  H01L24/02 ,  H01L24/11 ,  H01L24/12 ,  H01L24/14 ,  H01L24/94 ,  H01L2224/0233 ,  H01L2224/02331 ,  H01L2224/0401 ,  H01L2224/1147 ,  H01L2224/12105 ,  H01L2224/13014 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/274 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/03

摘要： A semiconductor device includes a semiconductor substrate on which a structure portion is provided except a peripheral portion thereof, and has a laminated structure including low dielectric films and wiring lines, the low dielectric films having a relative dielectric constant of 3.0 or lower and a glass transition temperature of 400° C. or higher. An insulating film is formed on the structure portion. A connection pad portion is arranged on the insulating film and connected to an uppermost wiring line of the laminated structure portion. A bump electrode is provided on the connection pad portion. A sealing film made of an organic resin is provided on a part of the insulating film which surrounds the pump electrode. Side surfaces of the laminated structure portion are covered with the insulating film and/or the sealing film.

公开(公告)号：US20130233241A1

公开(公告)日：2013-09-12

申请号：US13881074

申请日：2011-11-21

申请人： Osamu Okada ,  Masaaki Kawakami

发明人： Osamu Okada ,  Masaaki Kawakami

IPC分类号： C30B15/14 ,  C30B15/30 ,  C30B15/10

CPC分类号： C30B15/14 ,  C30B15/10 ,  C30B15/30 ,  C30B29/06 ,  Y10T117/1032 ,  Y10T117/1068 ,  Y10T117/1072

摘要： A single crystal pulling apparatus (1) has a quartz crucible (2) for accommodating silicon melt (3), a graphite crucible (4) for retaining the quartz crucible (2), a tray (5) for securing and holding the graphite crucible (4) from below, and a crucible rotating shaft (6) for supporting the tray (5) from below and for elevating and lowering the tray (5) and the crucibles (2), (4) while rotating them. A low heat conductive member (10) is interposed on a joint surface between the tray (5) and the crucible rotating shaft (6). The low heat conductive member (10) is formed in a substantially tubular shape, and is interposed in such a manner that a protruding portion of the crucible rotating shaft (6) is inserted through a center hole of the low heat conductive member (10). Thereby, a gap portion (11) is formed below a bottom portion of the tray (5).

摘要翻译： 单晶拉制装置（1）具有用于容纳硅熔体（3）的石英坩埚（2），用于保持石英坩埚（2）的石墨坩埚（4），用于固定和保持石墨坩埚的托盘（5） （4），以及用于从下方支撑托盘（5）并用于在旋转托盘（5）和坩埚（2），（4）时升降的坩埚旋转轴（6）。 低导热构件（10）插入在托盘（5）和坩埚旋转轴（6）之间的接合表面上。 低导热构件（10）形成为大致筒状，并且以坩埚旋转轴（6）的突出部穿过低导热构件（10）的中心孔插入的方式插入， 。 由此，在托盘（5）的底部下方形成有间隙部（11）。

公开(公告)号：US20120219718A1

公开(公告)日：2012-08-30

申请号：US13462549

申请日：2012-05-02

申请人： Osamu Okada ,  Masaaki Teramoto ,  Reza Yegani ,  Hideto Matsuyama ,  Keiko Shimada ,  Kaori Morimoto

发明人： Osamu Okada ,  Masaaki Teramoto ,  Reza Yegani ,  Hideto Matsuyama ,  Keiko Shimada ,  Kaori Morimoto

IPC分类号： B05D3/10 ,  B05D3/02

CPC分类号： B01J19/2475 ,  B01D69/10 ,  B01D69/12 ,  B01D71/38 ,  B01D71/40 ,  B01D71/76 ,  B01D2325/20 ,  C01B3/16 ,  C01B2203/041 ,  C01B2203/0475 ,  C01B2203/066 ,  H01M8/0668 ,  H01M8/0687 ,  Y02C10/04 ,  Y02P70/56

摘要： A CO2-facilitated transport membrane of excellent carbon dioxide permeability and CO2/H2 selectivity, which can be applied to a CO2 permeable membrane reactor, is stably provided. The CO2-facilitated transport membrane is formed such that a gel layer 1 obtained by adding cesium carbonate to a polyvinyl alcohol-polyacrylic acid copolymer gel membrane is supported by a hydrophilic porous membrane 2. More preferably, a gel layer supported by a hydrophilic porous membrane 2 is coated with hydrophilic porous membranes 3 and 4.

摘要翻译： 稳定地提供了可应用于二氧化碳可渗透膜反应器的具有优异的二氧化碳渗透性和CO 2 / H 2选择性的CO 2促进输送膜。 形成CO 2促进输送膜，使得通过将碳酸铯添加到聚乙烯醇 - 聚丙烯酸共聚物凝胶膜中而获得的凝胶层1由亲水性多孔膜2负载。更优选地，由亲水性多孔膜 2涂覆有亲水性多孔膜3和4。

公开(公告)号：US07882362B2

公开(公告)日：2011-02-01

申请号：US11583075

申请日：2006-10-19

申请人： Yuu Nomura ,  Taku Yokawa ,  Yoshikazu Ueta ,  Mitsuhiro Maruo ,  Mitsuya Kawashita ,  Osamu Okada ,  Takeshi Ohhara

发明人： Yuu Nomura ,  Taku Yokawa ,  Yoshikazu Ueta ,  Mitsuhiro Maruo ,  Mitsuya Kawashita ,  Osamu Okada ,  Takeshi Ohhara

IPC分类号： G06F21/00

CPC分类号： G06F21/10 ,  G06F11/1456 ,  G06F11/1458

摘要： In a data management apparatus (1) including a recording device (12) for recording contents data and a data processing section for processing the contents data, first management data for managing the contents data according to a first reference is recorded in the recording device (12), and the data processing section reproduces the contents data based on the first management data, and transfers the contents data to an external device (2) based on second management data which is used for management of the contents data by the external device according to a second reference different from the first reference. As a result, the protection of the contents data can be made while complying with related laws, and the contents data with optional functions added thereto can be backed up.

摘要翻译： 在包括用于记录内容数据的记录装置（12）和用于处理内容数据的数据处理部分的数据管理装置（1）中，用于根据第一参考来管理内容数据的第一管理数据被记录在记录装置 12），并且数据处理部分基于第一管理数据再现内容数据，并且基于用于由外部设备管理内容数据的第二管理数据将内容数据传送到外部设备（2），根据 到不同于第一参考的第二参考。 因此，可以在遵守相关法律的情况下保护内容数据，并且可以备份附加有可选功能的内容数据。

公开(公告)号：US07816790B2

公开(公告)日：2010-10-19

申请号：US11638717

申请日：2006-12-14

申请人： Aiko Mizusawa ,  Osamu Okada ,  Takeshi Wakabayashi

发明人： Aiko Mizusawa ,  Osamu Okada ,  Takeshi Wakabayashi

IPC分类号： H01L23/48

CPC分类号： H01L23/525 ,  H01L21/561 ,  H01L23/3114 ,  H01L23/5329 ,  H01L24/02 ,  H01L24/11 ,  H01L24/12 ,  H01L24/94 ,  H01L2224/0231 ,  H01L2224/0233 ,  H01L2224/02331 ,  H01L2224/0401 ,  H01L2224/12105 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/18301 ,  H01L2924/30105

摘要： A semiconductor device includes a semiconductor substrate and low dielectric film wiring line laminated structure portions which are provided in regions on the semiconductor substrate except a peripheral portion thereof. Each of the laminated structure portions has a laminated structure of low dielectric films and a plurality of wiring lines. An insulating film is provided on an upper side of the laminated structure portion. Connection pad portions for electrodes are arranged on the insulating film to be electrically connected to the connection pad portions of uppermost wiring lines of the laminated structure portion. Bump electrodes for external connection are provided on the connection pad portions for the electrodes. A sealing film is provided on the insulating film and on the peripheral portion of the semiconductor substrate. Side surfaces of the laminated structure portions are covered with the insulating film or the sealing film.

摘要翻译： 半导体器件包括半导体衬底和低电介质膜布线层叠结构部分，它们设置在除了其周边部分之外的半导体衬底上的区域中。 各层叠结构部分具有低电介质膜和多条布线的叠层结构。 绝缘膜设置在层叠结构部的上侧。 用于电极的连接焊盘部分布置在绝缘膜上以电连接到层叠结构部分的最上布线的连接焊盘部分。 用于外部连接的凸起电极设置在用于电极的连接焊盘部分上。 在绝缘膜上和半导体衬底的周边部分上设置密封膜。 层叠结构部分的侧表面被绝缘膜或密封膜覆盖。

公开(公告)号：US20090243097A1

公开(公告)日：2009-10-01

申请号：US12412576

申请日：2009-03-27

申请人： Taisuke KOROKU ,  Takeshi Wakabayashi ,  Osamu Okada ,  Osamu Kuwabara ,  Junji Shiota ,  Nobumitsu Fujii

发明人： Taisuke KOROKU ,  Takeshi Wakabayashi ,  Osamu Okada ,  Osamu Kuwabara ,  Junji Shiota ,  Nobumitsu Fujii

IPC分类号： H01L23/488 ,  H01L21/762

CPC分类号： H01L23/3114 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/3135 ,  H01L24/11 ,  H01L24/12 ,  H01L24/27 ,  H01L2221/6834 ,  H01L2221/68372 ,  H01L2221/68377 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/11 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2224/94 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/10157 ,  H01L2924/10158 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/3512 ,  H01L2924/00

摘要： A low dielectric constant film/wiring line stack structure made up of a stack of low dielectric constant films and wiring lines is provided in a region on the upper surface of the semiconductor substrate except for the peripheral part of this surface. The peripheral side surface of the low dielectric constant film/wiring line stack structure is covered with a sealing film. This provides a structure in which the low dielectric constant films do not easily come off. In this case, a lower protective film is provided on the lower surface of a silicon substrate to protect this lower surface against cracks.

摘要翻译： 在半导体基板的上表面的除了该表面的周边部分之外的区域中设置由低介电常数膜和布线组成的低介电常数膜/布线层叠结构。 低介电常数薄膜/布线层叠结构的周边侧表面被密封膜覆盖。 这提供了低介电常数膜不容易脱落的结构。 在这种情况下，在硅基板的下表面上设置下保护膜，以保护该下表面免受裂纹。