公开(公告)号：US20240036364A1

公开(公告)日：2024-02-01

申请号：US17875620

申请日：2022-07-28

Applicant: PALO ALTO RESEARCH CENTER INCORPORATED

Inventor： Christopher L. Chua ,  Ching-Fuh Lin ,  Zhihong Yang ,  Max Batres

IPC: G02F1/01

CPC classification number: G02F1/0147

Abstract: A transfer system includes a transfer layer formed of a thermally switchable material that undergoes a phase change when heated. A side of the transfer layer is placed in contact with an outward-facing side of a chiplet during a transfer operation. An optical absorber material is located on at least one of the outward facing side of the chiplet or an inward facing side of the chiplet. An optical energy source is operable to apply optical energy to the optical absorber material through the transfer layer to selectively heat a region of the transfer layer that corresponds to a location of the chiplet. The region holds the chiplet when the optical energy is removed during the transfer operation. The region is subsequently heated during the transfer operation to release the chiplet.

公开(公告)号：US10249786B2

公开(公告)日：2019-04-02

申请号：US15363050

申请日：2016-11-29

Applicant: PALO ALTO RESEARCH CENTER INCORPORATED

Inventor： Max Batres ,  Zhihong Yang ,  Thomas Wunderer

IPC: H01L33/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/78 ,  H01L29/20 ,  H01L29/32 ,  H01L33/02 ,  H01L33/32 ,  H01S5/183 ,  H01S5/323

Abstract: A method of thinning a bulk aluminum nitride substrate includes providing a bulk aluminum nitride (AlN) substrate with at least one epitaxially grown group-III-nitride layer on a first side of the substrate, applying a slurry having a high pH to a second side of the substrate opposite the first side, chemical mechanically polishing the second side of the substrate using the slurry to remove at least a portion of the substrate, resulting in a thinned layer with a thickness less than 50 microns, and bonding the epitaxial layer to a non-native substrate. A device has at least one active zone in a layer of epitaxial Group-III-nitride material, the epitaxial Group-III-nitride layer having a defect density of less than or equal to 108/cm2.

公开(公告)号：US09444224B2

公开(公告)日：2016-09-13

申请号：US14563847

申请日：2014-12-08

Applicant: PALO ALTO RESEARCH CENTER INCORPORATED

Inventor： Christopher L. Chua ,  Thomas Wunderer ,  Zhihong Yang

IPC: H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S5/20

CPC classification number: H01S5/30 ,  H01S5/2031 ,  H01S5/3013 ,  H01S5/309 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/3215 ,  H01S5/32341 ,  H01S5/34333

Abstract: An ultraviolet laser diode having multiple portions in the n-cladding layer is described herein. The laser diode comprises a p-cladding layer, an n-cladding layer, a waveguide, and a light-emitting region. The n-cladding layer includes at least a first portion and a second portion. The first portion maintains material quality of the laser diode, while the second portion pulls the optical mode from the p-cladding layer toward the active region. The first portion may have a higher aluminum composition than the second portion. The waveguide is coupled to the n-cladding layer and the light-emitting region is coupled to the waveguide. The light-emitting region is located between the n-cladding layer and the p-cladding layer. Other embodiments are also described.

Abstract translation: 本文描述了在n包层中具有多个部分的紫外激光二极管。 激光二极管包括p包层，n包层，波导和发光区域。 n包层至少包括第一部分和第二部分。 第一部分保持激光二极管的材料质量，而第二部分将光学模式从p包覆层拉向有源区。 第一部分可以具有比第二部分更高的铝组成。 波导耦合到n包层，并且发光区域耦合到波导。 发光区域位于n包层和p包层之间。 还描述了其它实施例。

公开(公告)号：US20230056905A1

公开(公告)日：2023-02-23

申请号：US17408686

申请日：2021-08-23

Applicant: Palo Alto Research Center Incorporated

Inventor： Christopher Chua ,  Joerg Martini ,  Zhihong Yang ,  Noble M. Johnson ,  Patrick Y. Maeda ,  Peter Kiesel

IPC: H01S5/42 ,  H01S5/183 ,  H01S5/02345 ,  H01S5/026

Abstract: A semiconductor surface-emitting laser array can be provided with a group of independently addressable light-emitting pixels arranged in at least two rows and in a linear array on a common substrate chip and including a common cathode and a dedicated channel associated with an address trace line for each pixel. An aggregate linear pitch can be achieved between pixels of the at least two rows along the linear array in a cross process direction that is less than the size of a pixel. The semiconductor laser array can include more than one common substrate chip tiled and stitched together in a staggered arrangement to provide an at least 11-inch wide, 1200pdi imager with timing delays associated with each of the more than one common substrate chip in the staggered arrangement.

公开(公告)号：US20230055986A1

公开(公告)日：2023-02-23

申请号：US17408732

申请日：2021-08-23

Applicant: Palo Alto Research Center Incorporated

Inventor： Joerg Martini ,  Zhihong Yang ,  Patrick Y. Maeda ,  Yu Wang

IPC: G03G15/043

Abstract: Focusing optics can include optical elements disposed and bonded in a linear arrangement (linear array) in at least two rows. A transparent bonding agent can secure alignment of the at least two rows of the optical elements. Scattering elements can also be disposed in the transparent polymer to cause light diffusion. Diffused or un-diffused light from a semiconductor laser array can then be caused to pass through the optical element and illuminate a target substrate such as an imaging member in a printing system.

公开(公告)号：US20160336481A1

公开(公告)日：2016-11-17

申请号：US15209715

申请日：2016-07-13

Applicant: Palo Alto Research Center Incorporated

Inventor： John E. Northrup ,  Bowen Cheng ,  Christopher L. Chua ,  Thomas Wunderer ,  Noble M. Johnson ,  Zhihong Yang

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/14 ,  H01L33/32 ,  H01S5/343 ,  H01S5/20 ,  H01S5/30 ,  H01S5/32 ,  H01S5/34 ,  B82Y20/00 ,  H01S5/042

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/14 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/0422 ,  H01S5/2009 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/3216 ,  H01S5/3404 ,  H01S5/34333

Abstract: A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of AlxhighGa1-xhighN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow≦xhigh≦0.9. Each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN.

Abstract translation: 发光器件包括具有由掺杂有p型掺杂剂的Al x Ga Ga x Ga x Ga x Ga N交替层和掺杂有p型掺杂剂的Al x O x Ga 1-x low N形成的短周期超晶格（SPSL）的p侧异质结构，其中xlow≤xhigh≤ 0.9。 SPSL的每个层具有小于或等于约六个双层AlGaN的厚度。

公开(公告)号：US20160164260A1

公开(公告)日：2016-06-09

申请号：US14563847

申请日：2014-12-08

Applicant: Palo ALto Research Center Incorporated

Inventor： Christopher L. Chua ,  Thomas Wunderer ,  Zhihong Yang

IPC: H01S5/30

CPC classification number: H01S5/30 ,  H01S5/2031 ,  H01S5/3013 ,  H01S5/309 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/3215 ,  H01S5/32341 ,  H01S5/34333

Abstract: An ultraviolet laser diode having multiple portions in the n-cladding layer is described herein. The laser diode comprises a p-cladding layer, an n-cladding layer, a waveguide, and a light-emitting region. The n-cladding layer includes at least a first portion and a second portion. The first portion maintains material quality of the laser diode, while the second portion pulls the optical mode from the p-cladding layer toward the active region. The first portion may have a higher aluminum composition than the second portion. The waveguide is coupled to the n-cladding layer and the light-emitting region is coupled to the waveguide. The light-emitting region is located between the n-cladding layer and the p-cladding layer. Other embodiments are also described.

Abstract translation: 本文描述了在n包层中具有多个部分的紫外激光二极管。 激光二极管包括p包层，n包层，波导和发光区域。 n包层至少包括第一部分和第二部分。 第一部分保持激光二极管的材料质量，而第二部分将光学模式从p包覆层拉向有源区。 第一部分可以具有比第二部分更高的铝组成。 波导耦合到n包层，并且发光区域耦合到波导。 发光区域位于n包层和p包层之间。 还描述了其它实施例。

公开(公告)号：US20240038574A1

公开(公告)日：2024-02-01

申请号：US17875729

申请日：2022-07-28

Applicant: PALO ALTO RESEARCH CENTER INCORPORATED

Inventor： Christopher L. Chua ,  Ching-Fuh Lin ,  Zhihong Yang

IPC: H01L21/687 ,  H01L21/677

CPC classification number: H01L21/68707 ,  H01L21/67781 ,  H01L21/67766

Abstract: A transfer system includes first and second optical energy sources operable to provide a respective first and second optical energy at respective first and second wavelengths. A chiplet has a bonding feature configured to interface with a corresponding bonding feature of a target substrate. At least one of the bonding features absorb at the first wavelength such that applying the first optical energy bonds the chiplet to the target substrate or removes a bond between the chiplet and the target substrate. The system includes a transfer layer formed of a thermally switchable material that undergoes a phase change when heated. An optical absorber absorbs at the second wavelength such that applying the second optical energy heats a region of the transfer layer at a location of the chiplet when removing the chiplets from a source substrate during the transfer operation.

公开(公告)号：US20240036363A1

公开(公告)日：2024-02-01

申请号：US17875610

申请日：2022-07-28

Applicant: PALO ALTO RESEARCH CENTER INCORPORATED

Inventor： Christopher L. Chua ,  Ching-Fuh Lin ,  Zhihong Yang

IPC: G02F1/01

CPC classification number: G02F1/0147

Abstract: A transfer apparatus includes a transfer layer formed of a thermally switchable material that undergoes a phase change when heated. A first side of the transfer layer is placed in contact with a chiplet during a transfer operation. An optical absorber material is thermally coupled the transfer layer. An optical energy source is operable to apply optical energy to the optical absorber material to selectively heat a region of the transfer layer that corresponds to a location of the chiplet. The region holds the chiplet when the optical energy is removed during the transfer operation. The region is subsequently heated during the transfer operation to release the chiplet. The transfer layer can be reused for repeated transfer operations.

公开(公告)号：US10164146B2

公开(公告)日：2018-12-25

申请号：US15209715

申请日：2016-07-13

Applicant: Palo Alto Research Center Incorporated

Inventor： John E. Northrup ,  Bowen Cheng ,  Christopher L. Chua ,  Thomas Wunderer ,  Noble M. Johnson ,  Zhihong Yang

IPC: H01L33/00 ,  H01L33/04 ,  H01L33/14 ,  H01L33/32 ,  H01S5/042 ,  H01S5/20 ,  H01S5/30 ,  H01S5/32 ,  H01S5/34 ,  H01S5/343 ,  H01L21/02 ,  H01L33/06 ,  B82Y20/00

Abstract: A light emitting device includes a p-side heterostructure having a short period superlattice (SPSL) formed of alternating layers of AlxhighGa1-xhighN doped with a p-type dopant and AlxlowGa1-xlowN doped with the p-type dopant, where xlow≤xhigh≤0.9. Each layer of the SPSL has a thickness of less than or equal to about six bi-layers of AlGaN.