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1.发明授权公开(公告)号：US12058877B2
公开(公告)日：2024-08-06
申请号：US17386009
申请日：2021-07-27
Inventor： Masaya Hirade , Hiroaki Iijima
CPC classification number: H10K39/32 , H10K30/353 , H10K85/211
Abstract: An imaging apparatus includes a semiconductor substrate; a first electrode; a second electrode; a photoelectric conversion layer disposed between the first electrode and the second electrode, and including a donor organic semiconductor material and an acceptor organic semiconductor material; a charge accumulation node positioned within the semiconductor substrate and electrically connected to the second electrode; and a first blocking layer disposed between the first electrode and the photoelectric conversion layer. The photoelectric conversion layer has an ionization potential of lower than or equal to 5.3 eV. The first blocking layer has an electron affinity lower than an electron affinity of the acceptor organic semiconductor material included in the photoelectric conversion layer. The imaging apparatus has spectral sensitivity in a near-infrared light region having wavelengths of greater than or equal to 650 nm and less than or equal to 3000 nm.
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公开(公告)号：US10964833B2
公开(公告)日：2021-03-30
申请号：US16890286
申请日：2020-06-02
Inventor： Masaya Hirade , Manabu Nakata , Yuko Kishimoto , Hironori Kaji , Katsuyuki Shizu , Katsuaki Suzuki
IPC: H01L31/055 , C09K11/06 , H01L31/0232 , H01L51/42 , H01L51/00
Abstract: A photoelectric conversion material includes a compound represented by Formula (1): where, X is selected from the group consisting of a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, and a cyano group; and Y represents a monovalent substituent represented by Formula (2): where, R1 to R10 each independently represent a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, or an aryl group; or two or more of R1 to R10 bond to each other to form one or more rings, and the remainders each independently represent a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, or an aryl group; * denotes the binding site of Y in Formula (1); and Ar1 is selected from the group consisting of structures represented by Formulae (3): where ** denotes a binding site of Ar1 with N in Formula (2).
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公开(公告)号：US10714646B2
公开(公告)日：2020-07-14
申请号：US16054205
申请日：2018-08-03
Inventor： Masaya Hirade , Manabu Nakata , Yuko Kishimoto , Hironori Kaji , Katsuyuki Shizu , Katsuaki Suzuki
IPC: H01L31/055 , H01L31/0232 , C09K11/06 , H01L51/42 , H01L51/00
Abstract: A photoelectric conversion material includes a compound represented by Formula (1): where, X is selected from the group consisting of a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, and a cyano group; and Y represents a monovalent substituent represented by Formula (2): where, R1 to R10 each independently represent a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, or an aryl group; or two or more of R1 to R10 bond to each other to form one or more rings, and the remainders each independently represent a hydrogen atom, a deuterium atom, a halogen atom, an alkyl group, or an aryl group; * denotes the binding site of Y in Formula (1); and Ar1 is selected from the group consisting of structures represented by Formulae (3): where ** denotes a binding site of Ar1 with N in Formula (2).
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公开(公告)号：US10297766B2
公开(公告)日：2019-05-21
申请号：US15959097
申请日：2018-04-20
Inventor： Manabu Nakata , Yuko Kishimoto , Masaya Hirade
IPC: H01L51/00 , H01L31/0224 , C07F7/22 , H01L51/42
Abstract: A composition contains a compound represented by the following formula: where M represents either of Si and Sn, R1 to R8 each independently represent an alkyl group containing three or less carbon atoms, and R9 to R14 each independently represent an alkyl group.
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公开(公告)号：US11711932B2
公开(公告)日：2023-07-25
申请号：US17313563
申请日：2021-05-06
Inventor： Masaya Hirade , Manabu Nakata , Katsuya Nozawa , Yasunori Inoue
CPC classification number: H10K30/82 , H10K30/353 , H10K39/32 , H10K71/135 , H10K71/164 , H10K71/231
Abstract: A method for manufacturing a photoelectric conversion element includes providing a base structure including a semiconductor substrate having a principal surface, a first electrode located on or above the principal surface, second electrodes which are located on or above the principal surface and which are one- or two-dimensionally arranged, and a photoelectric conversion film covering at least the second electrodes; forming a mask layer on the photoelectric conversion film, the mask layer being conductive and including a covering section covering a portion of the photoelectric conversion film that overlaps the second electrodes in plan view; and partially removing the photoelectric conversion film by immersing the base structure and the mask layer in an etchant.
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公开(公告)号：US11523037B2
公开(公告)日：2022-12-06
申请号：US17231647
申请日：2021-04-15
Inventor： Hiroaki Iijima , Masaya Hirade , Yuko Kishimoto
Abstract: A camera system includes a light source having a peak emission wavelength at room temperature in a near-infrared region, and an imaging device including a photoelectric conversion element that converts near-infrared light into an electric charge. An external quantum efficiency of the photoelectric conversion element has a first peak at a first wavelength longer than the peak emission wavelength, and the external quantum efficiency at the first wavelength is higher than the external quantum efficiency at the peak emission wavelength.
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公开(公告)号：US11031568B2
公开(公告)日：2021-06-08
申请号：US16274154
申请日：2019-02-12
Inventor： Masaya Hirade , Manabu Nakata , Katsuya Nozawa , Yasunori Inoue
Abstract: A method for manufacturing a photoelectric conversion element includes providing a base structure including a semiconductor substrate having a principal surface, a first electrode located on or above the principal surface, second electrodes which are located on or above the principal surface and which are one- or two-dimensionally arranged, and a photoelectric conversion film covering at least the second electrodes; forming a mask layer on the photoelectric conversion film, the mask layer being conductive and including a covering section covering a portion of the photoelectric conversion film that overlaps the second electrodes in plan view; and partially removing the photoelectric conversion film by immersing the base structure and the mask layer in an etchant.
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公开(公告)号：US11818450B2
公开(公告)日：2023-11-14
申请号：US17975272
申请日：2022-10-27
Inventor： Hiroaki Iijima , Masaya Hirade , Yuko Kishimoto
Abstract: A camera system includes a light source having a peak emission wavelength at room temperature in a near-infrared region, and an imaging device including a photoelectric conversion element that converts near-infrared light into an electric charge. An external quantum efficiency of the photoelectric conversion element has a first peak at a first wavelength longer than the peak emission wavelength, and the external quantum efficiency at the first wavelength is higher than the external quantum efficiency at the peak emission wavelength.
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公开(公告)号：US11447639B2
公开(公告)日：2022-09-20
申请号：US17013780
申请日：2020-09-07
Inventor： Hiroaki Iijima , Masaya Hirade , Manabu Nakata , Taniyuki Furuyama
IPC: C09B47/067 , H01L51/00 , H01L51/42
Abstract: A composition contains a phthalocyanine derivative represented by the following formula: where R1 to R8 are independently an alkyl group, M is Si, each of R9 and R10 is any one of substituents represented by the following formulas, R11 to R13 are independently an alkyl group, and R14 to R18 are independently an alkyl group or an aryl group:
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公开(公告)号：US20210258458A1
公开(公告)日：2021-08-19
申请号：US17231647
申请日：2021-04-15
Inventor： Hiroaki Iijima , Masaya Hirade , Yuko Kishimoto
Abstract: A camera system includes a light source having a peak emission wavelength at room temperature in a near-infrared region, and an imaging device including a photoelectric conversion element that converts near-infrared light into an electric charge. An external quantum efficiency of the photoelectric conversion element has a first peak at a first wavelength longer than the peak emission wavelength, and the external quantum efficiency at the first wavelength is higher than the external quantum efficiency at the peak emission wavelength.
