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    INTERCONNECT STRUCTURES WITH PATTERNABLE LOW-K DIELECTRICS AND METHOD OF FABRICATING SAME
    8.
    发明申请
    INTERCONNECT STRUCTURES WITH PATTERNABLE LOW-K DIELECTRICS AND METHOD OF FABRICATING SAME 有权
    具有可编程低K电介质的互连结构及其制造方法

    公开(公告)号：US20100283157A1

    公开(公告)日：2010-11-11

    申请号：US12841359

    申请日：2010-07-22

    申请人： Qinghuang Lin ,  Shyng-Tsong Chen

    发明人： Qinghuang Lin ,  Shyng-Tsong Chen

    IPC分类号： H01L23/522 ,  H01L21/768

    CPC分类号： H01L21/76808 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/31 ,  H01L21/3122 ,  H01L21/76802 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： The present invention provides an interconnect structure in which a patternable low-k material is employed as an interconnect dielectric material. Specifically, this invention relates to single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric. In general terms, the interconnect structure includes at least one patterned and cured low-k dielectric material located on a surface of a substrate. The at least one cured and patterned low-k material has conductively filled regions embedded therein and typically, but not always, includes Si atoms bonded to cyclic rings via oxygen atoms. The present invention also provides a method of forming such interconnect structures in which no separate photoresist is employed in patterning the patterned low-k material.

    摘要翻译： 本发明提供一种互连结构，其中使用可图案化的低k材料作为互连电介质材料。 具体而言，本发明涉及具有至少一个可构图的低k电介质的单镶嵌和双镶嵌低k互连结构。 一般来说，互连结构包括位于衬底表面上的至少一个图案化和固化的低k电介质材料。 所述至少一种固化和图案化的低k材料具有嵌入其中的导电填充区域，并且通常但不总是包括通过氧原子键合到环上的Si原子。 本发明还提供一种形成这种互连结构的方法，其中在图案化的低k材料图案中不使用单独的光致抗蚀剂。

    INTERCONNECT STRUCTURES WITH PATTERNABLE LOW-K DIELECTRICS AND METHOD OF FABRICATING SAME
    10.
    发明申请
    INTERCONNECT STRUCTURES WITH PATTERNABLE LOW-K DIELECTRICS AND METHOD OF FABRICATING SAME 有权
    具有可编程低K电介质的互连结构及其制造方法

    公开(公告)号：US20090079075A1

    公开(公告)日：2009-03-26

    申请号：US11858624

    申请日：2007-09-20

    申请人： Qinghuang Lin ,  Shyng-Tsong Chen

    发明人： Qinghuang Lin ,  Shyng-Tsong Chen

    IPC分类号： H01L23/52 ,  H01L21/4763

    CPC分类号： H01L21/76808 ,  H01L21/02137 ,  H01L21/02282 ,  H01L21/02304 ,  H01L21/02348 ,  H01L21/31 ,  H01L21/3122 ,  H01L21/76802 ,  H01L21/76832 ,  H01L21/76835 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

    摘要： The present invention provides an interconnect structure in which a patternable low-k material is employed as an interconnect dielectric material. Specifically, this invention relates to single-damascene and dual-damascene low-k interconnect structures with at least one patternable low-k dielectric. In general terms, the interconnect structure includes at least one patterned and cured low-k dielectric material located on a surface of a substrate. The at least one cured and patterned low-k material has conductively filled regions embedded therein and typically, but not always, includes Si atoms bonded to cyclic rings via oxygen atoms. The present invention also provides a method of forming such interconnect structures in which no separate photoresist is employed in patterning the patterned low-k material.

    摘要翻译： 本发明提供一种互连结构，其中使用可图案化的低k材料作为互连电介质材料。 具体而言，本发明涉及具有至少一个可构图的低k电介质的单镶嵌和双镶嵌低k互连结构。 一般来说，互连结构包括位于衬底表面上的至少一个图案化和固化的低k电介质材料。 所述至少一种固化和图案化的低k材料具有嵌入其中的导电填充区域，并且通常但不总是包括通过氧原子键合到环上的Si原子。 本发明还提供一种形成这种互连结构的方法，其中在图案化的低k材料图案中不使用单独的光致抗蚀剂。