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    HIGH-YIELD METHOD OF EXPOSING AND CONTACTING THROUGH-SILICON VIAS
    2.
    发明申请
    HIGH-YIELD METHOD OF EXPOSING AND CONTACTING THROUGH-SILICON VIAS 有权
    高渗硅的渗透和接触方法

    公开(公告)号：US20100178766A1

    公开(公告)日：2010-07-15

    申请号：US12352718

    申请日：2009-01-13

    申请人： Paul S. Andry ,  John M. Cotte ,  Michael F. Lofaro ,  Edmund J. Sprogis ,  James A. Tornello ,  Cornelia K. Tsang

    发明人： Paul S. Andry ,  John M. Cotte ,  Michael F. Lofaro ,  Edmund J. Sprogis ,  James A. Tornello ,  Cornelia K. Tsang

    IPC分类号： H01L21/461

    CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05184 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/131 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00

    摘要： An assembly including a main wafer having a body with a front side and a back side, and a handler wafer, is obtained. The main wafer has a plurality of blind electrical vias terminating above the back side. The blind electrical vias have conductive cores with surrounding insulator adjacent side and end regions of the cores. The handler wafer is secured to the front side of the body of the main wafer. An additional step includes exposing the blind electrical vias on the back side. The blind electrical vias are exposed to various heights across the back side. Another step involves applying a first chemical mechanical polish process to the back side, to open any of the surrounding insulator adjacent the end regions of the cores remaining after the exposing step, and to co-planarize the via conductive cores, the surrounding insulator adjacent the side regions of the cores, and the body of the main wafer. Further steps include etching the back side to produce a uniform standoff height of each of the vias across the back side; depositing a dielectric across the back side; and applying a second chemical mechanical polish process to the back side, to open the dielectric only adjacent the conductive cores of the vias.

    摘要翻译： 获得包括具有前侧和后侧的主体的主晶片和处理器晶片的组件。 主晶片具有在背面上方终止的多个盲电通路。 盲电通孔具有导电芯，其周围绝缘体邻近芯的侧面和端部区域。 处理器晶片固定到主晶片的主体的前侧。 另外的步骤包括在背面暴露盲电通孔。 盲孔通过背面暴露于各种高度。 另一个步骤涉及将第一化学机械抛光工艺应用于背面，以便打开暴露步骤之后残留的芯的端部附近的任何周围的绝缘体，并且将通孔导电芯，邻近的绝缘体 芯的侧面区域和主晶片的主体。 进一步的步骤包括蚀刻背面以产生穿过背面的每个通路的均匀间隔高度; 在背面沉积电介质; 以及向后侧施加第二化学机械抛光工艺，以仅在通孔的导电芯附近打开电介质。

    PROCESS FOR WET SINGULATION USING A DICING MOAT STRUCTURE
    8.
    发明申请
    PROCESS FOR WET SINGULATION USING A DICING MOAT STRUCTURE 有权
    使用定位滑行结构进行湿式整流的过程

    公开(公告)号：US20100261335A1

    公开(公告)日：2010-10-14

    申请号：US12423254

    申请日：2009-04-14

    申请人： Paul S. Andry ,  Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Edmund J. Sprogis ,  Cornelia K. Tsang

    发明人： Paul S. Andry ,  Timothy H. Daubenspeck ,  Jeffrey P. Gambino ,  Edmund J. Sprogis ,  Cornelia K. Tsang

    IPC分类号： H01L21/78

    CPC分类号： H01L21/78

    摘要： A method includes receiving at least one wafer having a front side and a backside, where the front side has a plurality of integrated circuit chips thereon. The backside of the wafer is thinned, a pattern of material is removed from the backside of the wafer to form a plurality of dicing trenches. Each of the dicing trenches are positioned opposite a location on the front side of the wafer that corresponds to edges of each of the plurality of chips. The dicing trenches are filled with a filler material and a dicing support is attached to a front side of the wafer. The filler material is removed from the dicing trenches, and a force is applied to the dicing support to separate each of the plurality of chips on the wafer from each other along the dicing trenches.

    摘要翻译： 一种方法包括接收具有前侧和后侧的至少一个晶片，其中前侧在其上具有多个集成电路芯片。 晶片的背面变薄，从晶片的背面去除材料图案以形成多个切割沟槽。 每个切割槽位于对应于多个芯片中的每一个的边缘的晶片正面的位置。 切割槽填充有填充材料，并且切割支撑件附接到晶片的前侧。 从切割槽移除填充材料，并且将力施加到切割支撑件，以将晶片上的多个芯片中的每一个沿着切割沟槽彼此分离。