公开(公告)号：US07019402B2

公开(公告)日：2006-03-28

申请号：US10686640

申请日：2003-10-17

申请人： Paul Stephen Andry ,  Leena Paivikki Buchwalter ,  Russell Alan Budd ,  Thomas Anthony Wassick

发明人： Paul Stephen Andry ,  Leena Paivikki Buchwalter ,  Russell Alan Budd ,  Thomas Anthony Wassick

IPC分类号： H01L23/48

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

摘要： This disclosure teaches a method of filling deep vias or capping deep conducting paste filled vias in silicon or glass substrate using laser assisted chemical vapor deposition of metals. This method uses a continuous wave or pulsed laser to heat the via bottom and the growing metal fill selectively by selecting the laser wavelength such that silicon and/or glass do not absorb the energy of the laser in any appreciable manner to cause deposition in the field. Alternatively holographic mask or an array of micro lenses may be used to focus the laser beams to the vias to fill them with metal. The substrate is moved in a controlled manner in the z-direction away from the laser at about the rate of deposition thus causing the laser heating to be focused on the surface region of the growing metal fill.

摘要翻译： 该公开内容教导了使用金属的激光辅助化学气相沉积在硅或玻璃基板中填充深通孔或者封装深导电糊填充通孔的方法。 该方法使用连续波或脉冲激光器通过选择激光波长来选择性地加热通孔底部和生长金属填充物，使得硅和/或玻璃不以任何可察觉的方式吸收激光的能量以在场中沉积 。 或者，可以使用全息掩模或微透镜阵列来将激光束聚焦到通孔以用金属填充它们。 以大约的沉积速率，以z方向以受控方式远离激光器移动衬底，从而使激光加热聚焦在生长金属填充物的表面区域上。

公开(公告)号：US08187923B2

公开(公告)日：2012-05-29

申请号：US12167745

申请日：2008-07-03

申请人： Paul Stephen Andry ,  Leena Paivikki Buchwalter ,  Matthew J. Farinelli ,  Sherif A. Goma ,  Raymond R. Horton ,  Edmund J. Sprogis

发明人： Paul Stephen Andry ,  Leena Paivikki Buchwalter ,  Matthew J. Farinelli ,  Sherif A. Goma ,  Raymond R. Horton ,  Edmund J. Sprogis

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L21/67092 ,  H01L21/67132 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68318 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2224/11003 ,  H01L2224/16 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/10253 ,  Y10S414/139 ,  H01L2924/00 ,  H01L2224/0401

摘要： A laser release and glass chip removal process for a integrated circuit module avoiding carrier edge cracking is provided.

摘要翻译： 提供了用于避免载波边缘破裂的集成电路模块的激光释放和玻璃切屑去除工艺。

公开(公告)号：US07615405B2

公开(公告)日：2009-11-10

申请号：US11872331

申请日：2007-10-15

申请人： Paul Stephen Andry ,  Leena Paivikki Buchwalter ,  Raymond R. Horton ,  John Ulrich Knickerbocker ,  Cornelia K. Tsang ,  Steven Lorenz Wright

发明人： Paul Stephen Andry ,  Leena Paivikki Buchwalter ,  Raymond R. Horton ,  John Ulrich Knickerbocker ,  Cornelia K. Tsang ,  Steven Lorenz Wright

IPC分类号： H01L21/50 ,  H01L21/48 ,  H01L21/44

CPC分类号： H01L24/81 ,  H01L23/544 ,  H01L24/48 ,  H01L24/97 ,  H01L25/50 ,  H01L2223/54426 ,  H01L2223/54473 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/48227 ,  H01L2224/81001 ,  H01L2224/81054 ,  H01L2224/81136 ,  H01L2224/81203 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15157 ,  H01L2924/1517 ,  H01L2924/15174 ,  H01L2924/20109 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： An electronic dive and method of fabricating an electronic device. The method including placing a placement guide over a top surface of a module substrate, the placement guide having a guide opening, the guide opening extending from a top surface of the placement guide to a bottom surface of the placement guide; aligning the placement guide to an integrated circuit chip position on the module substrate; fixing the placement guide to the module substrate; placing an integrated circuit chip in the guide opening, sidewalls of the placement guide opening constraining electrically conductive bonding structures on bottom surface of the integrated circuit chip to self-align to an electrically conductive module substrate contact pad on the top surface of the module substrate in the integrated circuit chip position; and bonding the bonding structures to the module substrate contact pads, the bonding structures and the module substrate contact pads in direct physical and electrical contact after the bonding.

摘要翻译： 一种电子潜水及其制造方法。 所述方法包括将放置引导件放置在模块基板的顶表面上，所述放置引导件具有引导开口，所述引导开口从所述放置引导件的顶表面延伸到所述放置引导件的底表面; 将所述放置引导件对准所述模块基板上的集成电路芯片位置; 将所述放置引导件固定到所述模块基板; 将集成电路芯片放置在引导开口中，放置引导开口的侧壁约束集成电路芯片的底表面上的导电接合结构，以与模块基板的顶表面上的导电模块衬底接触焊盘自对准 集成电路芯片位置; 以及在接合之后将结合结构粘合到模块衬底接触焊盘，接合结构和模块衬底接触焊盘，直接物理和电接触。

公开(公告)号：US20080182362A1

公开(公告)日：2008-07-31

申请号：US11872331

申请日：2007-10-15

申请人： Paul Stephen Andry ,  Leena Paivikki Buchwalter ,  Raymond R. Horton ,  John Ulrich Knickerbocker ,  Cornelia K. Tsang ,  Steven Lorenz Wright

发明人： Paul Stephen Andry ,  Leena Paivikki Buchwalter ,  Raymond R. Horton ,  John Ulrich Knickerbocker ,  Cornelia K. Tsang ,  Steven Lorenz Wright

IPC分类号： H01L21/00

CPC分类号： H01L24/81 ,  H01L23/544 ,  H01L24/48 ,  H01L24/97 ,  H01L25/50 ,  H01L2223/54426 ,  H01L2223/54473 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/48227 ,  H01L2224/81001 ,  H01L2224/81054 ,  H01L2224/81136 ,  H01L2224/81203 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15157 ,  H01L2924/1517 ,  H01L2924/15174 ,  H01L2924/20109 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： An electronic dive and method of fabricating an electronic device. The method including placing a placement guide over a top surface of a module substrate, the placement guide having a guide opening, the guide opening extending from a top surface of the placement guide to a bottom surface of the placement guide; aligning the placement guide to an integrated circuit chip position on the module substrate; fixing the placement guide to the module substrate; placing an integrated circuit chip in the guide opening, sidewalls of the placement guide opening constraining electrically conductive bonding structures on bottom surface of the integrated circuit chip to self-align to an electrically conductive module substrate contact pad on the top surface of the module substrate in the integrated circuit chip position; and bonding the bonding structures to the module substrate contact pads, the bonding structures and the module substrate contact pads in direct physical and electrical contact after the bonding.

摘要翻译： 一种电子潜水及其制造方法。 所述方法包括将放置引导件放置在模块基板的顶表面上，所述放置引导件具有引导开口，所述引导开口从所述放置引导件的顶表面延伸到所述放置引导件的底表面; 将所述放置引导件对准所述模块基板上的集成电路芯片位置; 将所述放置引导件固定到所述模块基板; 将集成电路芯片放置在引导开口中，放置引导开口的侧壁约束集成电路芯片的底表面上的导电接合结构，以与模块基板的顶表面上的导电模块衬底接触焊盘自对准 集成电路芯片位置; 以及在接合之后将结合结构粘合到模块衬底接触焊盘，接合结构和模块衬底接触焊盘，直接物理和电接触。

公开(公告)号：US07276787B2

公开(公告)日：2007-10-02

申请号：US10729254

申请日：2003-12-05

申请人： Daniel Charles Edelstein ,  Paul Stephen Andry ,  Leena Paivikki Buchwalter ,  Jon Alfred Casey ,  Sherif A. Goma ,  Raymond R. Horton ,  Gareth Geoffrey Hougham ,  Michael Wayne Lane ,  Xiao Hu Liu ,  Chirag Suryakant Patel ,  Edmund Juris Sprogis ,  Michelle Leigh Steen ,  Brian Richard Sundlof ,  Cornelia K. Tsang ,  George Frederick Walker

发明人： Daniel Charles Edelstein ,  Paul Stephen Andry ,  Leena Paivikki Buchwalter ,  Jon Alfred Casey ,  Sherif A. Goma ,  Raymond R. Horton ,  Gareth Geoffrey Hougham ,  Michael Wayne Lane ,  Xiao Hu Liu ,  Chirag Suryakant Patel ,  Edmund Juris Sprogis ,  Michelle Leigh Steen ,  Brian Richard Sundlof ,  Cornelia K. Tsang ,  George Frederick Walker

IPC分类号： H01L23/48 ,  H01L23/498 ,  H01L21/4763 ,  H01L29/40 ,  H01L23/52

CPC分类号： H01L23/49883 ,  H01L21/486 ,  H01L21/76898 ,  H01L23/49827 ,  H01L2224/16 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00

摘要： A carrier structure and method for fabricating a carrier structure with through-vias each having a conductive structure with an effective coefficient of thermal expansion which is less than or closely matched to that of the substrate, and having an effective elastic modulus value which is less than or closely matches that of the substrate. The conductive structure may include concentric via fill areas having differing materials disposed concentrically therein, a core of the substrate material surrounded by an annular ring of conductive material, a core of CTE-matched non-conductive material surrounded by an annular ring of conductive material, a conductive via having an inner void with low CTE, or a full fill of a conductive composite material such as a metal-ceramic paste which has been sintered or fused.

摘要翻译： 一种载体结构和方法，用于制造具有通孔的载流子结构，每个导通孔具有导电结构，其有效热膨胀系数小于或接近于基板的热膨胀系数，并且具有小于或等于 或者与衬底的密切匹配。 导电结构可以包括同心的通孔填充区域，其具有同心设置的不同材料，由导电材料的环形环包围的衬底材料的芯，由导电材料的环形环包围的CTE匹配的非导电材料的芯， 具有低CTE的内部空隙的导电通孔，或已经烧结或熔合的诸如金属 - 陶瓷浆料的导电复合材料的完整填充物。

公开(公告)号：US07282391B1

公开(公告)日：2007-10-16

申请号：US11385121

申请日：2006-03-21

申请人： Paul Stephen Andry ,  Leena Paivikki Buchwalter ,  Raymond R. Horton ,  John Ulrich Knickerbocker ,  Cornelia K. Tsang ,  Steven Lorenz Wright

发明人： Paul Stephen Andry ,  Leena Paivikki Buchwalter ,  Raymond R. Horton ,  John Ulrich Knickerbocker ,  Cornelia K. Tsang ,  Steven Lorenz Wright

IPC分类号： H01L21/00 ,  H01L23/48

CPC分类号： H01L24/81 ,  H01L23/544 ,  H01L24/48 ,  H01L24/97 ,  H01L25/50 ,  H01L2223/54426 ,  H01L2223/54473 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/48227 ,  H01L2224/81001 ,  H01L2224/81054 ,  H01L2224/81136 ,  H01L2224/81203 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/15157 ,  H01L2924/1517 ,  H01L2924/15174 ,  H01L2924/20109 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： An electronic dive and method of fabricating an electronic device. The method including placing a placement guide over a top surface of a module substrate, the placement guide having a guide opening, the guide opening extending from a top surface of the placement guide to a bottom surface of the placement guide; aligning the placement guide to an integrated circuit chip position on the module substrate; fixing the placement guide to the module substrate; placing an integrated circuit chip in the guide opening, sidewalls of the placement guide opening constraining electrically conductive bonding structures on bottom surface of the integrated circuit chip to self-align to an electrically conductive module substrate contact pad on the top surface of the module substrate in the integrated circuit chip position; and bonding the bonding structures to the module substrate contact pads, the bonding structures and the module substrate contact pads in direct physical and electrical contact after the bonding.

摘要翻译： 一种电子潜水及其制造方法。 所述方法包括将放置引导件放置在模块基板的顶表面上，所述放置引导件具有引导开口，所述引导开口从所述放置引导件的顶表面延伸到所述放置引导件的底表面; 将所述放置引导件对准所述模块基板上的集成电路芯片位置; 将所述放置引导件固定到所述模块基板; 将集成电路芯片放置在引导开口中，放置引导开口的侧壁约束集成电路芯片的底表面上的导电接合结构，以与模块基板的顶表面上的导电模块衬底接触焊盘自对准 集成电路芯片位置; 以及在接合之后将结合结构粘合到模块衬底接触焊盘，接合结构和模块衬底接触焊盘，直接物理和电接触。

公开(公告)号：US07943412B2

公开(公告)日：2011-05-17

申请号：US10316254

申请日：2002-12-10

申请人： Leena Paivikki Buchwalter ,  Kevin Kok Chan ,  Timothy Joseph Dalton ,  Christopher Vincent Jahnes ,  Jennifer Louise Lund ,  Kevin Shawn Petrarca ,  James Louis Speidell ,  James Francis Ziegler

发明人： Leena Paivikki Buchwalter ,  Kevin Kok Chan ,  Timothy Joseph Dalton ,  Christopher Vincent Jahnes ,  Jennifer Louise Lund ,  Kevin Shawn Petrarca ,  James Louis Speidell ,  James Francis Ziegler

IPC分类号： H01L21/00

CPC分类号： B81C1/00246 ,  B81B2201/0271 ,  B81C1/0023 ,  B81C2203/0735 ,  H03H3/0072 ,  H03H9/2405

摘要： A method of formation of a microelectromechanical system (MEMS) resonator or filter which is compatible with integration with any analog, digital, or mixed-signal integrated circuit (IC) process, after or concurrently with the formation of the metal interconnect layers in those processes, by virtue of its materials of composition, processing steps, and temperature of fabrication is presented. The MEMS resonator or filter incorporates a lower metal level, which forms the electrodes of the MEMS resonator or filter, that may be shared with any or none of the existing metal interconnect levels on the IC. It further incorporates a resonating member that is comprised of at least one metal layer for electrical connection and electrostatic actuation, and at least one dielectric layer for structural purposes. The gap between the electrodes and the resonating member is created by the deposition and subsequent removal of a sacrificial layer comprised of a carbon-based material. The method of removal of the sacrificial material is by an oxygen plasma or an anneal in an oxygen containing ambient. A method of vacuum encapsulation of the MEMS resonator or filter is provided through means of a cavity containing the MEMS device, filled with additional sacrificial material, and sealed. Access vias are created through the membrane sealing the cavity; the sacrificial material is removed as stated previously, and the vias are re-sealed in a vacuum coating process.

摘要翻译： 一种形成微机电系统（MEMS）谐振器或滤波器的方法，其与在任何模拟，数字或混合信号集成电路（IC）工艺中的集成兼容，或者与这些工艺中的金属互连层的形成同时 ，由于其组成材料，加工步骤和制造温度。 MEMS谐振器或滤波器包含形成MEMS谐振器或滤波器的电极的较低金属电平，其可与IC上的现有金属互连电平中的任何一个或任何一个共享。 它还包括谐振元件，该谐振元件由用于电连接和静电驱动的至少一个金属层和至少一个用于结构目的的电介质层组成。 通过沉积并随后去除由碳基材料构成的牺牲层来产生电极和谐振构件之间的间隙。 去除牺牲材料的方法是通过氧等离子体或在含氧环境中的退火。 MEMS谐振器或滤波器的真空封装方法是通过一个包含MEMS器件的空腔的装置提供的，其中填充有额外的牺牲材料并被密封。 通过隔膜密封腔形成通孔; 如先前所述去除牺牲材料，并且在真空涂覆工艺中重新密封通孔。

公开(公告)号：US07452568B2

公开(公告)日：2008-11-18

申请号：US11049846

申请日：2005-02-04

申请人： Gareth Hougham ,  Leena Paivikki Buchwalter ,  Stephen L. Buchwalter ,  Jon Casey ,  Claudius Feger ,  Matteo Flotta ,  Jeffrey D. Gelorme ,  Kathleen C. Hinge ,  Anurag Jain ,  Sung K. Kang ,  John U. Knickerbocker

发明人： Gareth Hougham ,  Leena Paivikki Buchwalter ,  Stephen L. Buchwalter ,  Jon Casey ,  Claudius Feger ,  Matteo Flotta ,  Jeffrey D. Gelorme ,  Kathleen C. Hinge ,  Anurag Jain ,  Sung K. Kang ,  John U. Knickerbocker

IPC分类号： B05D3/12 ,  B05D1/42

CPC分类号： H05K3/4053 ,  B05D1/002 ,  H01L21/486 ,  H01L21/76898 ,  H05K2201/09509 ,  H05K2203/1554

摘要： The present disclosure relates generally to semiconductor, integrated circuits, and particularly, but not by way of limitation, to centrifugal methods of filling high-aspect ratio vias and trenches with powders, pastes, suspensions of materials to act as any of a conducting, structural support, or protective member of an electronic component.

摘要翻译： 本公开总体上涉及半导体，集成电路，特别是但不限于，用于填充高纵横比通孔和沟槽的离心方法，其具有粉末，浆料，材料的悬浮液，以充当导电的结构 支撑或电子部件的保护构件。

公开(公告)号：US20080157395A1

公开(公告)日：2008-07-03

申请号：US11616919

申请日：2006-12-28

申请人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valerie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K. Srivastava ,  Michael J. Sullivan

发明人： Luc Belanger ,  Stephen L. Buchwalter ,  Leena Paivikki Buchwalter ,  Ajay P. Giri ,  Jonathan H. Griffith ,  Donald W. Henderson ,  Sung Kwon Kang ,  Eric H. Laine ,  Christian Lavoie ,  Paul A. Lauro ,  Valerie Anne Oberson ,  Da-Yuan Shih ,  Kamalesh K. Srivastava ,  Michael J. Sullivan

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L24/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/114 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13023 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/30107 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2224/13099

摘要： An interconnection structure suitable for flip-chip attachment of microelectronic device chips to packages, comprising a two, three or four layer ball-limiting metallurgy including an adhesion/reaction barrier layer, and having a solder wettable layer reactive with components of a tin-containing lead free solder, so that the solderable layer can be totally consumed during soldering, but a barrier layer remains after being placed in contact with the lead free solder during soldering. One or more lead-free solder balls is selectively situated on the solder wetting layer, the lead-free solder balls comprising tin as a predominant component and one or more alloying components.

摘要翻译： 一种适于将微电子器件芯片倒装连接到封装的互连结构，包括二层，三层或四层限流冶金，包括粘附/反应阻挡层，并且具有与含锡的组分反应的焊料可湿性层 无铅焊料，使得可焊接层在焊接期间可以完全消耗，但在焊接期间与无铅焊料接触后，阻挡层保持不变。 一个或多个无铅焊料球选择性地位于焊料润湿层上，该无铅焊球包含锡作为主要成分和一种或多种合金成分。

公开(公告)号：US20110109405A1

公开(公告)日：2011-05-12

申请号：US13007130

申请日：2011-01-14

申请人： Leena Paivikki Buchwalter ,  Kevin Kok Chan ,  Timothy Joseph Dalton ,  Christopher Vincent Jahnes ,  Jennifer Louise Lund ,  Kevin Shawn Petrarca ,  James Louis Speidell ,  James Francis Ziegler

发明人： Leena Paivikki Buchwalter ,  Kevin Kok Chan ,  Timothy Joseph Dalton ,  Christopher Vincent Jahnes ,  Jennifer Louise Lund ,  Kevin Shawn Petrarca ,  James Louis Speidell ,  James Francis Ziegler

IPC分类号： H03H9/24

CPC分类号： B81C1/00246 ,  B81B2201/0271 ,  B81C1/0023 ,  B81C2203/0735 ,  H03H3/0072 ,  H03H9/2405

摘要： A microelectromechanical system (MEMS) resonator or filter including a first conductive layer, one or more electrodes patterned in the first conductive layer which serve the function of signal input, signal output, or DC biasing, or some combination of these functions, an evacuated cavity, a resonating member comprised of a lower conductive layer and an upper structural layer, a first air gap between the resonating member and one or more of the electrodes, an upper membrane covering the cavity, and a second air gap between the resonating member and the upper membrane.

摘要翻译： 一种微机电系统（MEMS）谐振器或滤波器，其包括第一导电层，在第一导电层中图案化的一个或多个电极，其用于信号输入，信号输出或DC偏置的功能，或这些功能的某些组合;抽真空腔 ，由下导电层和上结构层构成的谐振构件，在谐振构件和一个或多个电极之间的第一气隙，覆盖空腔的上膜，以及谐振构件和第二气隙之间的第二气隙 上膜。