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公开(公告)号：US07579285B2
公开(公告)日：2009-08-25
申请号：US11484229
申请日：2006-07-10
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/45536 , C23C16/405 , C23C16/482 , C23C16/483 , H01L21/3141
摘要： The invention is related to an ALD method for depositing a layer including the steps of a) providing a semiconductor substrate in a reactor; b) providing a pulse of a first precursor gas into the reactor; c) providing a pulse of a second precursor gas into the reactor; d) providing an inert atmosphere in the reactor; and e) repeating step b) through step d), wherein at least once during step d) the semiconductor substrate is exposed to UV irradiation.
摘要翻译： 本发明涉及一种用于沉积层的ALD方法，包括以下步骤：a）在反应器中提供半导体衬底; b）将第一前体气体的脉冲提供到反应器中; c）向所述反应器提供第二前体气体的脉冲; d）在反应器中提供惰性气氛; 和e）重复步骤b）至步骤d），其中在步骤d）期间至少一次使半导体衬底暴露于UV照射。
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公开(公告)号：US20070049045A1
公开(公告)日：2007-03-01
申请号：US11484229
申请日：2006-07-10
IPC分类号： H01L21/31
CPC分类号： C23C16/45536 , C23C16/405 , C23C16/482 , C23C16/483 , H01L21/3141
摘要： The invention is related to an ALD method for depositing a layer comprising the steps of a) providing a semiconductor substrate in a reactor; b) providing a pulse of a first precursor gas into the reactor; c) providing a pulse of a second precursor gas into the reactor; d) providing an inert atmosphere in the reactor; and e) repeating step b) through step d), wherein at least once during step d) the semiconductor substrate is exposed to UV irradiation.
摘要翻译： 本发明涉及一种用于沉积层的ALD方法，包括以下步骤：a）在反应器中提供半导体衬底; b）将第一前体气体的脉冲提供到反应器中; c）向所述反应器提供第二前体气体的脉冲; d）在反应器中提供惰性气氛; 和e）重复步骤b）至步骤d），其中在步骤d）期间至少一次使半导体衬底暴露于UV照射。
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公开(公告)号：US08211812B2
公开(公告)日：2012-07-03
申请号：US12104353
申请日：2008-04-16
申请人： Lars-Ake Ragnarsson , Paul Zimmerman , Kazuhiko Yamamoto , Tom Schram , Wim Deweerd , David Brunco , Stefan De Gendt , Wilfried Vandervorst
发明人： Lars-Ake Ragnarsson , Paul Zimmerman , Kazuhiko Yamamoto , Tom Schram , Wim Deweerd , David Brunco , Stefan De Gendt , Wilfried Vandervorst
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/316 , C23C16/56 , H01L21/28185 , H01L21/28194 , H01L21/31116 , H01L21/31122 , H01L21/31604 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L29/517 , H01L2924/0002 , H01L2924/00
摘要： One inventive aspect relates to a method for fabricating a high-k dielectric layer. The method comprises depositing onto a substrate a layer of a high-k dielectric material having a first thickness. The high-k dielectric material has a bulk density value and the first thickness is so that the high-k dielectric layer has a density of at least the bulk density value of the high-k dielectric material minus about 10%. The method further comprises thinning the high-k dielectric layer to a second thickness. Another inventive aspect relates to a semiconductor device comprising a high-k dielectric layer as fabricated by the method.
摘要翻译： 本发明的一个方面涉及一种用于制造高k电介质层的方法。 该方法包括在基底上沉积具有第一厚度的高k电介质材料的层。 高k电介质材料具有体积密度值，第一厚度使得高k电介质层具有至少高k电介质材料的体积密度值减去约10％的密度。 该方法还包括将高k电介质层变薄至第二厚度。 另一个发明方面涉及包括通过该方法制造的高k电介质层的半导体器件。
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公开(公告)号：US20080265380A1
公开(公告)日：2008-10-30
申请号：US12104353
申请日：2008-04-16
申请人： Lars-Ake Ragnarsson , Paul Zimmerman , Kazuhiko Yamamoto , Tom Schram , Wim Deweerd , David Brunco , Stefan De Gendt , Wilfried Vandervorst
发明人： Lars-Ake Ragnarsson , Paul Zimmerman , Kazuhiko Yamamoto , Tom Schram , Wim Deweerd , David Brunco , Stefan De Gendt , Wilfried Vandervorst
IPC分类号： H01L23/58 , H01L21/469
CPC分类号： H01L21/316 , C23C16/56 , H01L21/28185 , H01L21/28194 , H01L21/31116 , H01L21/31122 , H01L21/31604 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L29/517 , H01L2924/0002 , H01L2924/00
摘要： One inventive aspect relates to a method for fabricating a high-k dielectric layer. The method comprises depositing onto a substrate a layer of a high-k dielectric material having a first thickness. The high-k dielectric material has a bulk density value and the first thickness is so that the high-k dielectric layer has a density of at least the bulk density value of the high-k dielectric material minus about 10%. The method further comprises thinning the high-k dielectric layer to a second thickness. Another inventive aspect relates to a semiconductor device comprising a high-k dielectric layer as fabricated by the method.
摘要翻译： 本发明的一个方面涉及一种用于制造高k电介质层的方法。 该方法包括在基底上沉积具有第一厚度的高k电介质材料的层。 高k电介质材料具有体积密度值，第一厚度使得高k电介质层具有至少高k电介质材料的体积密度值减去约10％的密度。 该方法还包括将高k电介质层变薄至第二厚度。 另一个发明方面涉及包括通过该方法制造的高k电介质层的半导体器件。
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公开(公告)号：US08551675B2
公开(公告)日：2013-10-08
申请号：US13208300
申请日：2011-08-11
IPC分类号： G03F9/00
CPC分类号： G03F1/64 , Y10T428/3154 , Y10T428/31544
摘要： A pellicle membrane is mounted between an outer frame and an inner frame. At least one of the frames is attached to the reticle without using conventional adhesives. The pellicle and reticle may be used in a lithography system. The pellicle allows radiation to pass through the pellicle to the reticle and may prevent particles from passing through the pellicle.
摘要翻译： 防护薄膜组件安装在外框架和内框架之间。 至少一个框架不使用传统的粘合剂连接到掩模版上。 防护薄膜组件和掩模版可用于光刻系统。 防护薄膜组件允许辐射通过防护薄膜到掩模版，并且可以防止颗粒通过防护薄膜。
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6.发明授权System and method of utilizing a hardware component to execute an interpretive language 失效利用硬件组件执行解释语言的系统和方法公开(公告)号：US07506322B2
公开(公告)日：2009-03-17
申请号：US10020420
申请日：2001-12-13
申请人： Vidyasagar Edara , Paul Zimmerman , Yair Raz , Anuradha Bommaji
发明人： Vidyasagar Edara , Paul Zimmerman , Yair Raz , Anuradha Bommaji
CPC分类号： G06F9/45504
摘要： A system and method of executing an interpretive language in a system having a processing component with native software processes and a memory component. A hardware component is coupled with the processing component and the memory component. The hardware component assists with the processing of the interpretive language and the system is permitted to execute the native software processes of the processing component.
摘要翻译： 一种在具有本机软件处理和存储器组件的处理组件的系统中执行解释语言的系统和方法。 硬件组件与处理组件和存储器组件耦合。 硬件组件协助解释语言的处理，并允许系统执行处理组件的本机软件过程。
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公开(公告)号：US07316869B2
公开(公告)日：2008-01-08
申请号：US10649355
申请日：2003-08-26
IPC分类号： G03F9/00
CPC分类号： G03F1/64 , Y10T428/3154 , Y10T428/31544
摘要： A pellicle membrane is mounted between an outer frame and an inner frame. At least one of the frames is attached to the reticle without using conventional adhesives. The pellicle and reticle may be used in a lithography system. The pellicle allows radiation to pass through the pellicle to the reticle and may prevent particles from passing through the pellicle.
摘要翻译： 防护薄膜组件安装在外框架和内框架之间。 至少一个框架不使用传统的粘合剂连接到掩模版上。 防护薄膜组件和掩模版可用于光刻系统。 防护薄膜组件允许辐射通过防护薄膜到掩模版，并且可以防止颗粒通过防护薄膜。
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公开(公告)号：US08012651B2
公开(公告)日：2011-09-06
申请号：US11957350
申请日：2007-12-14
IPC分类号： G03F9/00
CPC分类号： G03F1/64 , Y10T428/3154 , Y10T428/31544
摘要： A pellicle membrane is mounted between an outer frame and an inner frame. At least one of the frames is attached to the reticle without using conventional adhesives. The pellicle and reticle may be used in a lithography system. The pellicle allows radiation to pass through the pellicle to the reticle and may prevent particles from passing through the pellicle.
摘要翻译： 防护薄膜组件安装在外框架和内框架之间。 至少一个框架不使用传统的粘合剂连接到掩模版上。 防护薄膜组件和掩模版可用于光刻系统。 防护薄膜组件允许辐射通过防护薄膜到掩模版，并且可以防止颗粒通过防护薄膜。
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公开(公告)号：US20100108065A1
公开(公告)日：2010-05-06
申请号：US12522193
申请日：2007-01-04
摘要： A breathing mask adapted to be placed over a wearer's face, comprises a mask body including a gas inlet port to be disposed in flow communication with the wearer's breathing passage for flow of a gas in a predetermined flow stream there through upon inhalation by the wearer; a communications microphone (30) mounted to said mask body to capture the voice of the wearer, said communications microphone generating sound signals; an attenuation device (34) for attenuating said sound signals; a sound monitor (36) for monitoring the intensity of sound near the communications microphone in a predetermined frequency range, connected to a controller device (38) for activating the attenuation device when the sound intensity monitored by the sound monitor is in a predetermined level range.
摘要翻译： 适于放置在佩戴者的脸部上的呼吸面罩包括面罩主体，该面罩主体包括气体入口端口，该气体入口端口与穿着者的呼吸通道流动连通，以便在佩戴者吸入时在预定的流动流中流动气体; 安装到所述面罩主体以捕获佩戴者的声音的通信麦克风（30），所述通信麦克风产生声音信号; 衰减装置（34），用于衰减所述声音信号; 声音监视器（36），用于监视在预定频率范围内的通信麦克风附近的声音强度，连接到控制器装置（38），用于当由声音监视器监视的声音强度处于预定电平范围时激活衰减装置 。
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公开(公告)号：US20110294048A1
公开(公告)日：2011-12-01
申请号：US13208300
申请日：2011-08-11
IPC分类号： G03F1/00
CPC分类号： G03F1/64 , Y10T428/3154 , Y10T428/31544
摘要： A pellicle membrane is mounted between an outer frame and an inner frame. At least one of the frames is attached to the reticle without using conventional adhesives. The pellicle and reticle may be used in a lithography system. The pellicle allows radiation to pass through the pellicle to the reticle and may prevent particles from passing through the pellicle.
摘要翻译： 防护薄膜组件安装在外框架和内框架之间。 至少一个框架不使用传统的粘合剂连接到掩模版上。 防护薄膜组件和掩模版可用于光刻系统。 防护薄膜组件允许辐射通过防护薄膜到掩模版，并且可以防止颗粒通过防护薄膜。
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