摘要:
The invention is related to an ALD method for depositing a layer comprising the steps of a) providing a semiconductor substrate in a reactor; b) providing a pulse of a first precursor gas into the reactor; c) providing a pulse of a second precursor gas into the reactor; d) providing an inert atmosphere in the reactor; and e) repeating step b) through step d), wherein at least once during step d) the semiconductor substrate is exposed to UV irradiation.
摘要:
The invention is related to an ALD method for depositing a layer including the steps of a) providing a semiconductor substrate in a reactor; b) providing a pulse of a first precursor gas into the reactor; c) providing a pulse of a second precursor gas into the reactor; d) providing an inert atmosphere in the reactor; and e) repeating step b) through step d), wherein at least once during step d) the semiconductor substrate is exposed to UV irradiation.
摘要:
One inventive aspect is related to an atomic layer deposition (ALD) method comprising: a) providing a semiconductor substrate in a reactor, b) providing a pulse of a first precursor gas into the reactor at a first temperature, c) providing a first pulse of a second precursor gas into the reactor at a second temperature, and d) providing a second pulse of the second precursor gas at a third temperature lower than the second temperature. Another inventive aspect relates to a reactor suitable to apply the method.
摘要:
One inventive aspect is related to an atomic layer deposition (ALD) method comprising: a) providing a semiconductor substrate in a reactor, b) providing a pulse of a first precursor gas into the reactor at a first temperature, c) providing a first pulse of a second precursor gas into the reactor at a second temperature, and d) providing a second pulse of the second precursor gas at a third temperature lower than the second temperature. Another inventive aspect relates to a reactor suitable to apply the method.
摘要:
The present invention relates generally to integrated circuit (IC) fabrication processes. The present invention relates more particularly to the treatment of surfaces, such as silicon dioxide or silicon oxynitride layers, for the subsequent deposition of a metal, metal oxide, metal nitride and/or metal carbide layer. The present invention further relates to a high-k gate obtainable by a method of the invention.
摘要:
The present invention relates generally to integrated circuit (IC) fabrication processes. The present invention relates more particularly to the treatment of surfaces, such as silicon dioxide or silicon oxynitride layers, for the subsequent deposition of a metal, metal oxide, metal nitride and/or metal carbide layer. The present invention further relates to a high-k gate obtainable by a method of the invention.