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    Multilevel imprint lithography
    2.
    发明申请
    Multilevel imprint lithography 失效
    多层压印光刻

    公开(公告)号：US20100112809A1

    公开(公告)日：2010-05-06

    申请号：US11636264

    申请日：2006-12-07

    申请人： Pavel Kornilovich ,  Yong Chen ,  Duncan Stewart ,  R. Stanley Williams ,  Philip J. Kuekes ,  Mehmet Fatih Yanik

    发明人： Pavel Kornilovich ,  Yong Chen ,  Duncan Stewart ,  R. Stanley Williams ,  Philip J. Kuekes ,  Mehmet Fatih Yanik

    IPC分类号： H01L21/768

    CPC分类号： H01L21/76838 ,  B81C99/009 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

    摘要： A mold with a protruding pattern is provided that is pressed into a thin polymer film via an imprinting process. Controlled connections between nanowires and microwires and other lithographically-made elements of electronic circuitry are provided. An imprint stamp is configured to form arrays of approximately parallel nanowires which have (1) micro dimensions in the X direction, (2) nano dimensions and nano spacing in the Y direction, and three or more distinct heights in the Z direction. The stamp thus formed can be used to connect specific individual nanowires to specific microscopic regions of microscopic wires or pads. The protruding pattern in the mold creates recesses in the thin polymer film, so the polymer layer acquires the reverse of the pattern on the mold. After the mold is removed, the film is processed such that the polymer pattern can be transferred on a metal/semiconductor pattern on the substrate.

    摘要翻译： 提供具有突出图案的模具，其通过压印过程被压入薄聚合物膜。 提供了纳米线和微丝之间的控制连接以及电子电路的其它光刻元件。 打印印记被配置成形成大致平行的纳米线的阵列，其具有（1）X方向上的微尺寸，（2）在Y方向上的纳米尺寸和纳米间距，以及Z方向上的三个或更多个不同的高度。 如此形成的印章可以用于将特定的单个纳米线连接到微细线或垫的特定微观区域。 模具中的突出图案在薄聚合物膜中产生凹陷，因此聚合物层获得模具上图案的相反。 在除去模具之后，处理膜，使得聚合物图案可以在基底上的金属/半导体图案上转印。

    Multilevel imprint lithography
    3.
    发明授权
    Multilevel imprint lithography 有权
    多层压印光刻

    公开(公告)号：US07256435B1

    公开(公告)日：2007-08-14

    申请号：US10453329

    申请日：2003-06-02

    申请人： Pavel Kornilovich ,  Yong Chen ,  Duncan Stewart ,  R. Stanley Williams ,  Philip J. Kuekes ,  Mehmet Fatih Yanik

    发明人： Pavel Kornilovich ,  Yong Chen ,  Duncan Stewart ,  R. Stanley Williams ,  Philip J. Kuekes ,  Mehmet Fatih Yanik

    IPC分类号： H01L27/10

    CPC分类号： H01L21/76838 ,  B81C99/009 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

    摘要： A mold with a protruding pattern is provided that is pressed into a thin polymer film via an imprinting process. Controlled connections between nanowires and microwires and other lithographically-made elements of electronic circuitry are provided. An imprint stamp is configured to form arrays of approximately parallel nanowires which have (1) micro dimensions in the X direction, (2) nano dimensions and nano spacing in the Y direction, and three or more distinct heights in the Z direction. The stamp thus formed can be used to connect specific individual nanowires to specific microscopic regions of microscopic wires or pads. The protruding pattern in the mold creates recesses in the thin polymer film, so the polymer layer acquires the reverse of the pattern on the mold. After the mold is removed, the film is processed such that the polymer pattern can be transferred on a metal/semiconductor pattern on the substrate.

    摘要翻译： 提供具有突出图案的模具，其通过压印过程被压入薄聚合物膜。 提供了纳米线和微丝之间的控制连接以及电子电路的其它光刻元件。 打印印记被配置成形成大致平行的纳米线的阵列，其具有（1）X方向上的微尺寸，（2）在Y方向上的纳米尺寸和纳米间距，以及Z方向上的三个或更多个不同的高度。 如此形成的印章可以用于将特定的单个纳米线连接到微细线或垫的特定微观区域。 模具中的突出图案在薄聚合物膜中产生凹陷，因此聚合物层获得模具上图案的相反。 在除去模具之后，处理膜，使得聚合物图案可以在基底上的金属/半导体图案上转印。

    Switching device and methods for controlling electron tunneling therein
    4.
    发明授权
    Switching device and methods for controlling electron tunneling therein 有权
    用于控制电子隧穿的开关装置和方法

    公开(公告)号：US08502198B2

    公开(公告)日：2013-08-06

    申请号：US11414578

    申请日：2006-04-28

    申请人： R. Stanley Williams ,  Zhiyong Li ,  Douglas Ohlberg ,  Philip J. Kuekes ,  Duncan Stewart

    发明人： R. Stanley Williams ,  Zhiyong Li ,  Douglas Ohlberg ,  Philip J. Kuekes ,  Duncan Stewart

    IPC分类号： H01L29/08

    CPC分类号： G11C13/02 ,  G11C13/0009 ,  G11C2213/77 ,  H01L51/0591

    摘要： A switching device includes at least one bottom electrode and at least one top electrode. The top electrode crosses the bottom electrode at a non-zero angle, thereby forming a junction. A metal oxide layer is established on at least one of the bottom electrode or the top electrode. A molecular layer including a monolayer of organic molecules and a source of water molecules is established in the junction. Upon introduction of a forward bias, the molecular layer facilitates a redox reaction between the electrodes, thereby reducing a tunneling gap between the electrodes.

    摘要翻译： 开关装置包括至少一个底部电极和至少一个顶部电极。 顶部电极以非零角度穿过底部电极，从而形成结。 在底电极或顶电极中的至少一个上建立金属氧化物层。 在连接处建立了包括有机分子单层和水分子源的分子层。 在引入正向偏压时，分子层促进电极之间的氧化还原反应，从而减少电极之间的隧道间隙。

    Active interconnects and control points in integrated circuits
    8.
    发明授权
    Active interconnects and control points in integrated circuits 有权
    集成电路中的有源互连和控制点

    公开(公告)号：US07242199B2

    公开(公告)日：2007-07-10

    申请号：US11112795

    申请日：2005-04-21

    申请人： R. Stanley Williams ,  Philip J Kuekes ,  Frederick A. Perner ,  Greg Snider ,  Duncan Stewart

    发明人： R. Stanley Williams ,  Philip J Kuekes ,  Frederick A. Perner ,  Greg Snider ,  Duncan Stewart

    IPC分类号： G01R27/08

    CPC分类号： H05K7/1092 ,  H01L23/5228 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In various embodiments of the present invention, tunable resistors are introduced at the interconnect layer of integrated circuits in order to provide a for adjusting internal voltage and/or current levels within the integrated circuit to repair defective components or to configure the integrated circuit following manufacture. For example, when certain internal components, such as transistors, do not have specified electronic characteristics due to manufacturing defects, adjustment of the variable resistances of the tunable resistors included in the interconnect layer of integrated circuits according to embodiments of the present invention can be used to adjust internal voltage and/or levels in order to ameliorate the defective components. In other cases, the tunable resistors may be used as switches to configure integrated circuit components, including individual transistors and logic gates as well as larger, hierarchically structured functional modules and domains.

    摘要翻译： 在本发明的各种实施例中，在集成电路的互连层处引入可调电阻器，以便提供用于调整集成电路内的内部电压和/或电流水平以修复有缺陷的部件或者在制造之后配置集成电路。 例如，当诸如晶体管的某些内部组件由于制造缺陷而没有指定的电子特性时，可以使用根据本发明的实施例的集成电路的互连层中包括的可调谐电阻的可变电阻的调整 以调整内部电压和/或电平以便改善有缺陷的部件。 在其他情况下，可调谐电阻器可以用作开关以配置集成电路部件，包括单独的晶体管和逻辑门以及更大的分层结构的功能模块和域。