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公开(公告)号：US08007986B2
公开(公告)日：2011-08-30
申请号：US11754725
申请日：2007-05-29
IPC分类号： G02F1/361
CPC分类号： G03F7/2041
摘要： Suitable additives that may be added into immersion fluids, immersion fluids comprising at least one carrier medium selected from an aqueous fluid, a non-aqueous fluid, and mixtures thereof, and immersions fluids comprising at least one carrier medium and at least one additive useful for performing immersion lithography at an operating wavelength ranging from 140 nm to 365 nm are disclosed herein.
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公开(公告)号：US07879531B2
公开(公告)日：2011-02-01
申请号：US11030132
申请日：2005-01-07
CPC分类号： G03F7/2041
摘要： Suitable additives that may be added into immersion fluids, immersion fluids comprising at least one carrier medium selected from an aqueous fluid, a non-aqueous fluid, and mixtures thereof, and immersions fluids comprising at least one carrier medium and at least one additive useful for performing immersion lithography at an operating wavelength ranging from 140 nm to 365 nm are disclosed herein.
摘要翻译： 可以加入到浸渍流体中的合适的添加剂，包含至少一种选自水性流体，非水性流体及其混合物的载体介质的浸液，以及包含至少一种载体介质和至少一种可用于 本文公开了在140nm至365nm范围内的工作波长的浸没式光刻技术。
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公开(公告)号：US08227395B2
公开(公告)日：2012-07-24
申请号：US12846369
申请日：2010-07-29
IPC分类号： C11D1/00
CPC分类号： G03F7/322 , G03F7/0048 , G03F7/091 , G03F7/16 , G03F7/168 , G03F7/3021 , G03F7/32 , G03F7/38 , G03F7/40 , G03F7/425 , Y10S134/902
摘要： Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce post-development defects such as pattern collapse when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of pattern collapse defects on a plurality of photoresist coated substrates employing the process solution of the present invention.
摘要翻译： 使用包含一种或多种表面活性剂的工艺溶液来减少半导体器件制造中的缺陷数量。 在某些优选实施方案中，当在图案化光致抗蚀剂层的显影期间或之后，当用作冲洗溶液时，本发明的工艺溶液可以减少显影后缺陷，例如图案塌陷。 还公开了一种减少使用本发明的工艺溶液的多个光致抗蚀剂涂覆的基材上的图案塌陷缺陷的数量的方法。
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公开(公告)号：US07129199B2
公开(公告)日：2006-10-31
申请号：US10616662
申请日：2003-07-10
IPC分类号： C11D7/32
CPC分类号： G03F7/322 , G03F7/0048 , G03F7/091 , G03F7/16 , G03F7/168 , G03F7/3021 , G03F7/32 , G03F7/38 , G03F7/40 , G03F7/425 , Y10S134/902
摘要： Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce post-development defects such as pattern collapse when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of pattern collapse defects on a plurality of photoresist coated substrates employing the process solution of the present invention.
摘要翻译： 使用包含一种或多种表面活性剂的工艺溶液来减少半导体器件制造中的缺陷数量。 在某些优选实施方案中，当在图案化光致抗蚀剂层的显影期间或之后，当用作冲洗溶液时，本发明的工艺溶液可以减少显影后缺陷，例如图案塌陷。 还公开了一种减少使用本发明的工艺溶液的多个光致抗蚀剂涂覆的基材上的图案塌陷缺陷的数量的方法。
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公开(公告)号：US07521405B2
公开(公告)日：2009-04-21
申请号：US10804513
申请日：2004-03-19
IPC分类号： C11D7/50
CPC分类号： G03F7/32 , G03F7/0048 , G03F7/091 , G03F7/16 , G03F7/168 , G03F7/3021 , G03F7/322 , G03F7/38 , G03F7/40 , G03F7/425
摘要： Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain embodiments, the process solution may reduce post-development defects such as pattern collapse or line width roughness when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of defects such as pattern collapse and/or line width roughness on a plurality of photoresist coated substrates employing the process solution of the present invention.
摘要翻译： 使用包含一种或多种表面活性剂的工艺溶液来减少半导体器件制造中的缺陷数量。 在某些实施方案中，当在图案化光致抗蚀剂层的显影期间或之后，当用作冲洗溶液时，所述工艺溶液可以减少显影后缺陷，例如图案塌陷或线宽粗糙度。 还公开了一种使用本发明的工艺溶液来减少多个光致抗蚀剂涂覆的基板上的图案塌陷和/或线宽粗糙度等缺陷的数量的方法。
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公开(公告)号：US20100304313A1
公开(公告)日：2010-12-02
申请号：US12846369
申请日：2010-07-29
IPC分类号： G03F7/42
CPC分类号： G03F7/322 , G03F7/0048 , G03F7/091 , G03F7/16 , G03F7/168 , G03F7/3021 , G03F7/32 , G03F7/38 , G03F7/40 , G03F7/425 , Y10S134/902
摘要： Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce post-development defects such as pattern collapse when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of pattern collapse defects on a plurality of photoresist coated substrates employing the process solution of the present invention.
摘要翻译： 使用包含一种或多种表面活性剂的工艺溶液来减少半导体器件制造中的缺陷数量。 在某些优选实施方案中，当在图案化光致抗蚀剂层的显影期间或之后，当用作冲洗溶液时，本发明的工艺溶液可以减少显影后缺陷，例如图案塌陷。 还公开了一种减少使用本发明的工艺溶液的多个光致抗蚀剂涂覆的基材上的图案塌陷缺陷的数量的方法。
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公开(公告)号：US06641986B1
公开(公告)日：2003-11-04
申请号：US10218068
申请日：2002-08-12
IPC分类号： G03F730
CPC分类号： B01F17/0028 , B01F17/0021 , G03F7/0048 , G03F7/16 , G03F7/38
摘要： Aqueous solutions comprising one or more acetylenic diol type surfactants are used to improve the wettability of a substrate surface by lowering the contact angle of the aqueous developer solution are enclosed herein. In one embodiment, the aqueous solution is used to prepare the surface of the substrate prior to development of the resist coating layer.
摘要翻译： 包含一种或多种炔属二醇型表面活性剂的水溶液用于通过降低含水显影剂溶液的接触角来改善基材表面的润湿性。 在一个实施方案中，水溶液用于在显影抗蚀剂涂层之前制备基材的表面。
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公开(公告)号：US20110171583A1
公开(公告)日：2011-07-14
申请号：US12959067
申请日：2010-12-02
CPC分类号： G03F7/32 , G03F7/0048 , G03F7/091 , G03F7/16 , G03F7/168 , G03F7/3021 , G03F7/322 , G03F7/38 , G03F7/40 , G03F7/425
摘要： Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain embodiments, the process solution may reduce post-development defects such as pattern collapse or line width roughness when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of defects such as pattern collapse and/or line width roughness on a plurality of photoresist coated substrates employing the process solution of the present invention.
摘要翻译： 使用包含一种或多种表面活性剂的工艺溶液来减少半导体器件制造中的缺陷数量。 在某些实施方案中，当在图案化光致抗蚀剂层的显影期间或之后，当用作冲洗溶液时，所述工艺溶液可以减少显影后缺陷，例如图案塌陷或线宽粗糙度。 还公开了一种使用本发明的工艺溶液来减少多个光致抗蚀剂涂覆的基板上的图案塌陷和/或线宽粗糙度等缺陷的数量的方法。
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公开(公告)号：US07591270B2
公开(公告)日：2009-09-22
申请号：US11520971
申请日：2006-09-14
CPC分类号： G03F7/322 , G03F7/0048 , G03F7/091 , G03F7/16 , G03F7/168 , G03F7/3021 , G03F7/32 , G03F7/38 , G03F7/40 , G03F7/425 , Y10S134/902
摘要： Process solutions comprising one or more surfactants are used to reduce the number of pattern collapse defects on a plurality of photoresist coated substrates during the manufacture of semiconductor devices.
摘要翻译： 包括一种或多种表面活性剂的工艺溶液用于在半导体器件的制造过程中减少多个光致抗蚀剂涂覆的基板上的图案塌陷缺陷的数量。
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10.发明授权Acetylenic diol ethylene oxide/propylene oxide adducts and processes for their manufacture 有权乙烯二醇环氧乙烷/环氧丙烷加合物及其制备方法公开(公告)号：US07348300B2
公开(公告)日：2008-03-25
申请号：US11048576
申请日：2005-02-01
申请人： Kevin Rodney Lassila , Paula Ann Uhrin , Peng Zhang , Danielle Megan King Curzi , Leslie Cox Barber , Brenda Faye Ross
发明人： Kevin Rodney Lassila , Paula Ann Uhrin , Peng Zhang , Danielle Megan King Curzi , Leslie Cox Barber , Brenda Faye Ross
IPC分类号： C11D7/30
CPC分类号： H01L21/02052 , C08G65/2609 , C08G2650/60 , C11D1/08 , C11D1/40 , C11D1/72 , C11D1/722 , C11D3/164 , C11D11/0047 , G03F7/0048 , G03F7/091 , G03F7/16 , G03F7/168 , G03F7/3021 , G03F7/32 , G03F7/322 , G03F7/38 , G03F7/40 , G03F7/425 , H01L21/02074
摘要： Disclosed herein are process solutions, which may be aqueous-based, non-aqueous-based, and combinations thereof, that contain at least one alkoxylated acetylenic diol surfactant. In one aspect, the process solution comprises water and an alkoxylated acetylenic diol surfactant having the formula A: where r and t are 1 or 2, (n+m) is 1 to 30 and (p+q) is 1 to 30.
摘要翻译： 本文公开了含有至少一种烷氧基化炔二醇表面活性剂的工艺溶液，其可以是基于水性的，非水性的及其组合。 一方面，该方法包括水和具有式A的烷氧基化炔二醇表面活性剂：其中r和t为1或2，（n + m）为1〜30，（p + q）为1〜30。
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