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1.发明授权Method of delivering source reagent vapor mixtures for chemical vapor deposition using interiorly partitioned injector 失效使用内部分隔的注射器输送用于化学气相沉积的源试剂蒸汽混合物的方法
公开(公告)号：US6010748A
公开(公告)日：2000-01-04
申请号：US17384
申请日：1998-02-03
IPC分类号： C23C16/44 , C23C16/455 , C23C16/40
CPC分类号： C23C16/45565 , C23C16/455
摘要： A showerhead disperser device for mixing plural vapor streams, comprising: a housing including front and rear walls in spaced apart relation to one another, and a side wall therebetween, defining within the housing an interior volume; the front wall having a multiplicity of vapor mixture discharge openings therein, for discharging mixed vapor from the interior volume of the housing exteriorly thereof, flow passages joined to the housing for introducing into the interior volume of the housing respective fluids to be mixed therein; and at least one baffle plate mounted in the interior volume of the housing, intermediate the front and rear walls of the housing, the baffle plate having an edge in spaced relation to the side wall to form an annular flow passage therebetween and the baffle plate having at least one of the respective fluids directed thereagainst upon introduction to the interior volume of the housing, for distribution thereof in the interior volume of the housing. The baffled showerhead disperser is usefully employed to enable formation of CVD thin films of highly uniform composition and thickness.
摘要翻译： 一种用于混合多个蒸汽流的喷头分散装置，包括：壳体，其包括彼此间隔开的前壁和后壁以及其间的侧壁，在所述壳体内限定内部容积; 所述前壁在其中具有多个蒸汽混合物排出口，用于从其外部的所述壳体的内部容积排出混合蒸气，流动通道连接到所述壳体，以将待混合的各种流体引入到所述壳体的内部容积中; 以及安装在所述壳体的内部容积中的至少一个挡板，位于所述壳体的前壁和后壁之间，所述挡板具有与所述侧壁间隔开的边缘，以在其间形成环形流动通道，并且所述挡板具有 各个流体中的至少一个在引入壳体的内部空间时被引导到其上，以将其分配在壳体的内部空间中。 挡板式喷头分散机有利地用于形成高度均匀组成和厚度的CVD薄膜。
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2.发明授权Interiorly partitioned vapor injector for delivery of source reagent vapor mixtures for chemical vapor deposition 失效用于输送用于化学气相沉积的源试剂蒸气混合物的内部分隔蒸气喷射器
公开(公告)号：US5741363A
公开(公告)日：1998-04-21
申请号：US621088
申请日：1996-03-22
IPC分类号： C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/455
摘要： A showerhead disperser device for mixing plural vapor streams, comprising: a housing including front and rear walls in spaced apart relation to one another, and a side wall therebetween, defining within the housing an interior volume; the front wall having a multiplicity of vapor mixture discharge openings therein, for discharging mixed vapor from the interior volume of the housing exteriorly thereof, flow passages joined to the housing for introducing into the interior volume of the housing respective fluids to be mixed therein; and at least one baffle plate mounted in the interior volume of the housing, intermediate the front and rear walls of the housing, the baffle plate having an edge in spaced relation to the side wall to form an annular flow passage therebetween and the baffle plate having at least one of the respective fluids directed thereagainst upon introduction to the interior volume of the housing, for distribution thereof in the interior volume of the housing. The baffled showerhead disperser is usefully employed to enable formation of CVD thin films of highly uniform composition and thickness.
摘要翻译： 一种用于混合多个蒸汽流的喷头分散装置，包括：壳体，其包括彼此间隔开的前壁和后壁以及其间的侧壁，在所述壳体内限定内部容积; 所述前壁在其中具有多个蒸汽混合物排出口，用于从其外部的所述壳体的内部容积排出混合蒸气，流动通道连接到所述壳体，以将待混合的各种流体引入到所述壳体的内部容积中; 以及安装在所述壳体的内部容积中的至少一个挡板，位于所述壳体的前壁和后壁之间，所述挡板具有与所述侧壁间隔开的边缘，以在其间形成环形流动通道，并且所述挡板具有 各个流体中的至少一个在引入壳体的内部空间时被引导到其上，以将其分配在壳体的内部空间中。 挡板式喷头分散机有利地用于形成高度均匀组成和厚度的CVD薄膜。
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3.发明授权Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material 有权钛酸铅锆（PZT）薄膜材料和沉积方法，以及包含这种薄膜材料的铁电存储器件结构公开(公告)号：US07862857B2
公开(公告)日：2011-01-04
申请号：US12768374
申请日：2010-04-27
申请人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
发明人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
CPC分类号： C07C49/92 , C04B35/491 , C04B2235/441 , C04B2235/449 , C04B2235/963 , C07F7/003 , C23C16/409 , H01G4/1245 , H01G4/33 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).
摘要翻译： 一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围 的横向尺寸延伸到低至0.15μm。 在优选实施例中，对应的电容器面积（即横向缩放）在约104至约10-2μm2的范围内。 本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。
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4.发明授权Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material 有权钛酸铅锆（PZT）薄膜材料和沉积方法，以及包含这种薄膜材料的铁电存储器件结构公开(公告)号：US07705382B2
公开(公告)日：2010-04-27
申请号：US11924716
申请日：2007-10-26
申请人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
发明人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： C07C49/92 , C04B35/491 , C04B2235/441 , C04B2235/449 , C04B2235/963 , C07F7/003 , C23C16/409 , H01G4/1245 , H01G4/33 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).
摘要翻译： 一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围 的横向尺寸延伸到低至0.15μm。 在优选实施例中，对应的电容器面积（即横向缩放）在约104至约10-2μm2的范围内。 本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。
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公开(公告)号：US07464192B2
公开(公告)日：2008-12-09
申请号：US10238757
申请日：2002-09-10
IPC分类号： G06F3/00
CPC分类号： G06F13/385
摘要： A programmable serial interface is disclosed for use in a semiconductor circuit that supports a plurality of communication protocols. The programmable serial interface includes one or more shared hardware components that implement tasks and functions of a plurality of communication protocols, optional protocol specific hardware, a processor and memory. For each task or function required by a supported communication protocol, a determination is made as to which parts of the function will be implemented using shared hardware, protocol specific hardware or in software. The communication protocols to be supported are identified, and the functions performed in accordance with each of the supported protocols are analyzed to identify those functions suitable for common or shared hardware with other communication protocols. In addition, unique or time-critical functions are identified that must be implemented in hardware. Finally, any functions that are not implemented in hardware are implemented in software.
摘要翻译： 公开了可用于支持多个通信协议的半导体电路中的可编程串行接口。 可编程串行接口包括实现多个通信协议，可选协议特定硬件，处理器和存储器的任务和功能的一个或多个共享硬件组件。 对于支持的通信协议所需的每个任务或功能，确定将使用共享硬件，协议特定硬件或软件来实现功能的哪些部分。 识别要支持的通信协议，并且分析根据每个所支持的协议执行的功能，以识别适合于具有其他通信协议的公共或共享硬件的那些功能。 另外，确定必须以硬件实现的独特或时间关键的功能。 最后，在硬件中未实现的任何功能都是用软件实现的。
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6.发明授权Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material 有权钛酸铅锆（PZT）薄膜材料和沉积方法，以及包含这种薄膜材料的铁电存储器件结构公开(公告)号：US07344589B2
公开(公告)日：2008-03-18
申请号：US11328582
申请日：2006-01-10
申请人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
发明人： Peter C. Van Buskirk , Jeffrey F. Roeder , Steven M. Bilodeau , Michael W. Russell , Stephen T. Johnston , Daniel J. Vestyck , Thomas H. Baum
IPC分类号： C23C16/40
CPC分类号： C07C49/92 , C04B35/491 , C04B2235/441 , C04B2235/449 , C04B2235/963 , C07F7/003 , C23C16/409 , H01G4/1245 , H01G4/33 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).
摘要翻译： 一种新颖的钛酸铅锆（PZT）材料，具有独特的性能和应用于PZT薄膜电容器和铁电电容器结构，例如采用这种薄膜材料的FeRAM。 PZT材料是可扩展的，尺寸可缩放的，脉冲长度可伸缩的和/或电场可扩展的特征，并且在宽范围的厚度例如约20纳米至约150纳米的范围内对于铁电电容器是有用的，并且范围 的横向尺寸延伸到低至0.15毫米。 在优选实施例中，对应的电容器区域（即，横向缩放）在大约10 -4至大约10 -2 m / 。 本发明的可扩展的PZT材料可以通过液体输送MOCVD形成，而不需要PZT膜修饰技术，例如受体掺杂或使用膜改性剂（例如，Nb，Ta，La，Sr，Ca等）。
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公开(公告)号：US07012292B1
公开(公告)日：2006-03-14
申请号：US09200495
申请日：1998-11-25
申请人： Peter C. Van Buskirk , Steven M. Bilodeau , Stephen T. Johnston , Daniel J. Vestyck , Michael W. Russell
发明人： Peter C. Van Buskirk , Steven M. Bilodeau , Stephen T. Johnston , Daniel J. Vestyck , Michael W. Russell
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/11502 , H01L27/10852 , H01L27/11507 , H01L28/55 , H01L28/60
摘要： A method of preventing oxygen deficiency in a ferroelectric or high ε film material having a top electrode layer deposited thereon. Process conditions are employed that either enable the top electrode layer to be formed without oxygen abstraction from the ferroelectric or high ε film material in the vicinity and at the top surface thereof, or else provide the ferroelectric or high ε film material in the vicinity and at the top surface thereof with a surplus of oxygen. In the latter case, the deposition formation of the top electrode layer on the ferroelectric or high ε film material depletes the over-stoichiometric excess of the oxygen in the film material, to yield a device structure including an electrode on a film material having a proper stoichiometry, e.g., of PbZrTiO3.
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8.发明授权公开(公告)号：US06709610B2
公开(公告)日：2004-03-23
申请号：US09768494
申请日：2001-01-24
IPC分类号： C23F130
CPC分类号： H01L28/65 , C07F15/004 , C23C16/18 , C23C16/40 , C23F1/30 , C30B25/02 , C30B29/02 , C30B29/16 , H01L21/02071 , H01L21/32136 , H01L28/55 , Y10S438/906
摘要： A method for removing from a microelectronic device structure a noble metal residue including at least one metal selected from the group consisting of platinum, palladium, iridium and rhodium, by contacting the microelectronic device structure with a cleaning gas including a reactive halide composition, e.g., XeF2, SF6, SiF4, Si2F6 or SiF3 and SiF2 radicals. The method may be carried out in a batch-cleaning mode, in which fresh charges of cleaning gas are successively introduced to a chamber containing the residue-bearing microelectronic device structure. Each charge is purged from the chamber after reaction with the residue, and the charging/purging is continued until the residue has been at least partially removed to a desired extent. Alternatively, the cleaning gas may be continuously flowed through the chamber containing the microelectronic device structure, until the noble metal residue has been sufficiently removed.
摘要翻译： 通过使微电子器件结构与包括反应性卤化物组合物的清洁气体接触，从微电子器件结构去除包含选自铂，钯，铱和铑中的至少一种金属的贵金属残渣的方法， XeF 2，SF 6，SiF 4，Si 2 F 6或SiF 3和SiF 2基团。 该方法可以以分批清洁模式进行，其中清洁气体的新鲜电荷依次引入到含有残留物微电子器件结构的室中。 在与残留物反应之后，每个电荷从室中吹扫，并持续进行充电/净化，直到残余物至少部分地被去除到所需的程度。 或者，清洁气体可以连续流过包含微电子器件结构的室，直到贵金属残留物被充分除去。
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9.发明授权Low temperature CVD processes for preparing ferroelectric films using Bi alcoxides 有权使用Bi alcoxides制备铁电薄膜的低温CVD工艺公开(公告)号：US06500489B1
公开(公告)日：2002-12-31
申请号：US09208541
申请日：1998-12-09
申请人： Frank S. Hintermaier , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
发明人： Frank S. Hintermaier , Peter C. Van Buskirk , Jeffrey F. Roeder , Bryan C. Hendrix , Thomas H. Baum , Debra A. Desrochers
IPC分类号： C23C1640
CPC分类号： C23C16/409 , C23C16/40 , C23C16/407 , C23C16/4485 , C23C16/56 , H01L21/31691
摘要： Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides at the surface of the substrate. The precursor of Bi oxide is a Bi complex which includes at least one alkoxide group and is decomposed and deposited at a temperature lower than 450° C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.
摘要翻译： 化学气相沉积用于通过在衬底的表面分解这些氧化物的前体，在加热的衬底上形成Bi氧化物，Sr氧化物和Ta氧化物的膜。 Bi氧化物的前体是包含至少一个烷氧基的Bi络合物，并在低于450℃的温度下分解和沉积。通过低温CVD获得的Bi，Sr和Ta氧化物的膜主要是非 - 铁电体，但可以通过随后的加热工艺转化成铁电体膜。
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10.发明授权Chemical mechanical polishing compositions, and process for the CMP removal of iridium thin using same 失效化学机械抛光组合物，以及使用其去除铱薄膜的CMP的方法公开(公告)号：US06395194B1
公开(公告)日：2002-05-28
申请号：US09216679
申请日：1998-12-18
IPC分类号： C09K1300
CPC分类号： C09G1/02 , C23F3/00 , H01L21/3212 , H01L28/60
摘要： A method of removing noble metal material from a substrate having the noble metal material deposited thereon, such as a semiconductor device structure including thereon a layer of the noble metal material, e.g., iridium, patterned for use as an electrode. The substrate is subjected to chemical mechanical polishing with a chemical mechanical polishing composition containing abrasive polishing particles and a halide-based oxidizing agent. The CMP composition and method of the invention provide efficient planarization and noble metal material removal from the substrate, in applications such as the fabrication of ferroelectric or high permittivity capacitor devices.
摘要翻译： 从其上沉积有贵金属材料的基板去除贵金属材料的方法，例如在其上包括图案化为电极的贵金属材料（例如铱）的层的半导体器件结构。 用含有研磨抛光颗粒和卤化物基氧化剂的化学机械抛光组合物对衬底进行化学机械抛光。 本发明的CMP组合物和方法在诸如铁电或高介电常数电容器器件的制造等应用中提供了有效的平面化和从衬底去除贵金属材料。
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