Process for making an on-chip vacuum tube device
    1.
    发明申请
    Process for making an on-chip vacuum tube device 失效
    制造片上真空管装置的方法

    公开(公告)号:US20070293115A1

    公开(公告)日:2007-12-20

    申请号:US11649197

    申请日:2007-01-03

    IPC分类号: H01J9/00

    摘要: A microelectromechanical microwave vacuum tube device is disclosed. The device consists of a cathode formed on a substrate, the cathode comprising electron emitters. A cathode emission control grid is also attached to the device substrate. The device further includes an output structure where amplified microwave power is removed from the device. In the device, the cathode surface and the grid surface are substantially parallel to each other and substantially perpendicular to the substrate. One of either the cathode, the grid, or both the cathode and the grid, are attached to the device substrate by one or more flexural members. The device further comprises an anode that is substantially parallel to the cathode surface and the grid surface.

    摘要翻译: 公开了一种微机电微波真空管装置。 该器件由形成在衬底上的阴极组成,阴极包括电子发射体。 阴极发射控制栅格也附着到器件衬底。 该装置还包括其中放大的微波功率从该装置移除的输出结构。 在该器件中,阴极表面和栅格表面基本上彼此平行并基本垂直于衬底。 阴极,栅格或阴极和栅格中的一个通过一个或多个弯曲构件附接到器件衬底。 该装置还包括基本上平行于阴极表面和栅格表面的阳极。

    Providing a charge dissipation structure for an electrostatically driven device
    5.
    发明申请
    Providing a charge dissipation structure for an electrostatically driven device 有权
    提供静电驱动装置的电荷耗散结构

    公开(公告)号:US20050196891A1

    公开(公告)日:2005-09-08

    申请号:US11113782

    申请日:2005-04-25

    摘要: In one embodiment, an electrode is disposed on a surface of a first portion of the dielectric, with the first portion and the electrode forming an electrode region of the device. A charge-dissipation structure is then formed by implanting ions into the electrode region and a second portion of the dielectric located outside of the electrode region. In another embodiment, a charge-dissipation structure is formed by implanting ions into the dielectric of a movable part of an electromechanical system. Advantageously, ion implantation can be performed without masking, lithography, or elevated temperatures; the electrical properties of the resulting charge dissipation structure can be controlled relatively easily; and portions of the charge dissipation structure are protected from oxidation and/or corrosion by the dielectric material.

    摘要翻译: 在一个实施例中,电极设置在电介质的第一部分的表面上,其中第一部分和电极形成器件的电极区域。 然后通过将离子注入电极区域和位于电极区域外部的电介质的第二部分来形成电荷耗散结构。 在另一个实施例中,通过将离子注入到机电系统的可移动部分的电介质中来形成电荷 - 耗散结构。 有利地,可以进行离子注入而不进行掩蔽,光刻或升高的温度; 可以相对容易地控制所得电荷耗散结构的电性能; 并且电荷耗散结构的部分被电介质材料保护免受氧化和/或腐蚀。

    N-substituted prodrugs of fluorooxindoles
    10.
    发明申请
    N-substituted prodrugs of fluorooxindoles 有权
    氟代吲哚的N-取代的前药

    公开(公告)号:US20050203089A1

    公开(公告)日:2005-09-15

    申请号:US11074288

    申请日:2005-03-07

    CPC分类号: C07D209/34 C07D403/12

    摘要: The present invention provides novel N-substituted fluorooxindoles having the general Formula I wherein the wavy bond represents the racemate, the (R)-enantiomer or the (S)-enantiomer and m, n, p, q, A, B, D, Q, X, and Z are as defined below, or a nontoxic pharmaceutically acceptable salt or solvate thereof and are useful in the treatment of disorders which are responsive to the opening of potassium channels.

    摘要翻译: 本发明提供具有通式I的新型N-取代的氟代吲哚,其中波状键表示外消旋物,(R) - 对映体或(S) - 对映体,m,n,p,q,A,B,D, Q,X和Z如下所定义,或其无毒的药学上可接受的盐或溶剂化物,并且可用于治疗对钾通道开放有响应的病症。