公开(公告)号：US08900405B2

公开(公告)日：2014-12-02

申请号：US11985579

申请日：2007-11-14

申请人： Peter I. Porshnev ,  Majeed A. Foad ,  Kartik Ramaswamy ,  Biagio Gallo ,  Hiroji Hanawa ,  Andrew Nguyen ,  Kenneth S. Collins ,  Amir Al-Bayati

发明人： Peter I. Porshnev ,  Majeed A. Foad ,  Kartik Ramaswamy ,  Biagio Gallo ,  Hiroji Hanawa ,  Andrew Nguyen ,  Kenneth S. Collins ,  Amir Al-Bayati

IPC分类号： C23C16/00 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32642 ,  H01J37/32412

摘要： The disclosure concerns a process ring for the wafer support pedestal of a toroidal source plasma immersion ion implantation reactor. The process ring improves edge uniformity by providing a continuous surface extending beyond the wafer edge, in one embodiment. In another embodiment, the process ring includes a floating electrode that functions as an extension of the wafer support electrode by RF coupling at the bias frequency.

摘要翻译： 本公开涉及用于环形源等离子体浸入式离子注入反应器的晶片支撑基座的工艺环。 在一个实施例中，处理环通过提供延伸超过晶片边缘的连续表面来提高边缘均匀性。 在另一个实施例中，处理环包括浮动电极，其通过在偏置频率下的RF耦合用作晶片支撑电极的延伸。

公开(公告)号：US20090120367A1

公开(公告)日：2009-05-14

申请号：US11985579

申请日：2007-11-14

申请人： Peter I. Porshnev ,  Majeed A. Foad ,  Kartik Ramaswamy ,  Biagio Gallo ,  Hiroji Hanawa ,  Andrew Nguyen ,  Kenneth S. Collins ,  Amir Al-Bayati

发明人： Peter I. Porshnev ,  Majeed A. Foad ,  Kartik Ramaswamy ,  Biagio Gallo ,  Hiroji Hanawa ,  Andrew Nguyen ,  Kenneth S. Collins ,  Amir Al-Bayati

IPC分类号： C23C16/513

CPC分类号： H01J37/32642 ,  H01J37/32412

摘要： The disclosure concerns a process ring for the wafer support pedestal of a toroidal source plasma immersion ion implantation reactor. The process ring improves edge uniformity by providing a continuous surface extending beyond the wafer edge, in one embodiment. In another embodiment, the process ring includes a floating electrode that functions as an extension of the wafer support electrode by RF coupling at the bias frequency.

摘要翻译： 本公开涉及用于环形源等离子体浸入式离子注入反应器的晶片支撑基座的工艺环。 在一个实施例中，处理环通过提供延伸超过晶片边缘的连续表面来提高边缘均匀性。 在另一个实施例中，处理环包括浮动电极，其通过在偏置频率下的RF耦合用作晶片支撑电极的延伸。

公开(公告)号：US07674723B2

公开(公告)日：2010-03-09

申请号：US12069425

申请日：2008-02-06

申请人： Peter I. Porshnev ,  Majeed A. Foad

发明人： Peter I. Porshnev ,  Majeed A. Foad

IPC分类号： H01L21/31 ,  H01L21/469 ,  C23C16/00

CPC分类号： C23C14/48 ,  H01J37/32082 ,  H01J37/32412 ,  H01J37/32541 ,  H01J37/32706

摘要： In a plasma reactor, RF bias power is applied from an RF bias power generator to a disk-shaped electrode underlying and insulated from a workpiece and having a circumferential edge underlying a circumferential edge of the workpiece. The RF bias power is sufficient to produce a high RF bias voltage on the workpiece on the order of 0.5-20 kV. Non-uniformity in distribution of plasma across the workpiece is reduced by providing a curvature in a peripheral edge annulus of said electrode whereby the peripheral annulus slopes away from the workpiece support surface. The peripheral edge annulus corresponds to a small fraction of an area of said electrode. The remainder of the electrode encircled by the peripheral annulus has a flat shape.

摘要翻译： 在等离子体反应器中，RF偏置功率从RF偏置功率发生器施加到下面并与工件绝缘并且具有位于工件的圆周边缘周围的圆周边缘的盘形电极。 RF偏压功率足以在工件上产生大约0.5-20 kV的高RF偏置电压。 通过在所述电极的外围边缘环中提供曲率来减小跨过工件的等离子体分布的不均匀性，由此外围环形空间远离工件支撑表面。 外围边缘环对应于所述电极的一小部分面积。 由外围环圈包围的电极的其余部分具有平坦的形状。

公开(公告)号：US08354035B2

公开(公告)日：2013-01-15

申请号：US12821400

申请日：2010-06-23

申请人： Martin A. Hilkene ,  Majeed A. Foad ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke ,  Peter I. Porshnev

发明人： Martin A. Hilkene ,  Majeed A. Foad ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke ,  Peter I. Porshnev

IPC分类号： B44C1/22

CPC分类号： G11B5/84 ,  G03F7/427

摘要： A method of removing resist material from a substrate having a magnetically active surface is provided. The substrate is disposed in a processing chamber and exposed to a fluorine-containing plasma formed from a gas mixture having a reagent, an oxidizing agent, and a reducing agent. A cleaning agent may also be included. The substrate may be cooled by back-side cooling or by a cooling process wherein a cooling medium is provided to the processing chamber while the plasma treatment is suspended. Substrates may be flipped over for two-sided processing, and multiple substrates may be processed concurrently.

摘要翻译： 提供了从具有磁性活性表面的基板去除抗蚀剂材料的方法。 将基板设置在处理室中并暴露于由具有试剂，氧化剂和还原剂的气体混合物形成的含氟等离子体。 还可以包括清洁剂。 衬底可以通过背面冷却或通过冷却过程冷却，其中在等离子体处理被暂停时将冷却介质提供给处理室。 衬底可以翻转以进行双面处理，并且可以同时处理多个衬底。

公开(公告)号：US20110006034A1

公开(公告)日：2011-01-13

申请号：US12821400

申请日：2010-06-23

申请人： Martin A. Hilkene ,  Majeed A. Foad ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke ,  Peter I. Porshnev

发明人： Martin A. Hilkene ,  Majeed A. Foad ,  Matthew D. Scotney-Castle ,  Roman Gouk ,  Steven Verhaverbeke ,  Peter I. Porshnev

IPC分类号： G11B5/84

CPC分类号： G11B5/84 ,  G03F7/427

摘要： A method of removing resist material from a substrate having a magnetically active surface is provided. The substrate is disposed in a processing chamber and exposed to a fluorine-containing plasma formed from a gas mixture having a reagent, an oxidizing agent, and a reducing agent. A cleaning agent may also be included. The substrate may be cooled by back-side cooling or by a cooling process wherein a cooling medium is provided to the processing chamber while the plasma treatment is suspended. Substrates may be flipped over for two-sided processing, and multiple substrates may be processed concurrently.

摘要翻译： 提供了从具有磁性活性表面的基板去除抗蚀剂材料的方法。 将基板设置在处理室中并暴露于由具有试剂，氧化剂和还原剂的气体混合物形成的含氟等离子体。 还可以包括清洁剂。 衬底可以通过背面冷却或通过冷却过程冷却，其中在等离子体处理被暂停时将冷却介质提供给处理室。 衬底可以翻转以进行双面处理，并且可以同时处理多个衬底。

公开(公告)号：US07659184B2

公开(公告)日：2010-02-09

申请号：US12072495

申请日：2008-02-25

申请人： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

发明人： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

IPC分类号： H01L21/20

CPC分类号： H01J37/32477 ,  H01J37/32412 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/16

摘要： In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.

摘要翻译： 在等离子体浸没离子注入工艺中，增加了植入前调节层的厚度（允许植入一系列晶片而不更换调味料层），而不会因调节层厚度的增加而损失晶片夹紧静电力。 这是通过首先等离子体排出来自厚调味层的残留静电电荷来实现的。 在处理每个晶片之后，可以通过分批补充调味层来进一步增加可以使用相同调味料处理的晶片数量，其后可以在加工下一个晶片之前进行补充调味料的短暂等离子体放电。

公开(公告)号：US20090280628A1

公开(公告)日：2009-11-12

申请号：US12503697

申请日：2009-07-15

申请人： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

发明人： Manoj Vellaikal ,  Kartik Santhanam ,  Yen B. Ta ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle ,  Canfeng Lai ,  Peter I. Porshnev ,  Majeed A. Foad

IPC分类号： H01L21/26

CPC分类号： H01J37/32477 ,  H01J37/32412 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/16

摘要： In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer.

摘要翻译： 在等离子体浸没离子注入工艺中，增加了植入前调节层的厚度（允许植入一系列晶片而不更换调味料层），而不会因调节层厚度的增加而损失晶片夹紧静电力。 这是通过首先等离子体排出来自厚调味层的残留静电电荷来实现的。 在处理每个晶片之后，可以通过分批补充调味层来进一步增加可以使用相同调味料处理的晶片数量，其后可以在加工下一个晶片之前进行补充调味料的短暂等离子体放电。

公开(公告)号：US20090197010A1

公开(公告)日：2009-08-06

申请号：US12069425

申请日：2008-02-06

申请人： Peter I. Porshnev ,  Majeed A. Foad

发明人： Peter I. Porshnev ,  Majeed A. Foad

IPC分类号： C23C14/48 ,  B05C13/00

CPC分类号： C23C14/48 ,  H01J37/32082 ,  H01J37/32412 ,  H01J37/32541 ,  H01J37/32706

摘要： In a plasma reactor, RF bias power is applied from an RF bias power generator to a disk-shaped electrode underlying and insulated from a workpiece and having a circumferential edge underlying a circumferential edge of the workpiece. The RF bias power is sufficient to produce a high RF bias voltage on the workpiece on the order of 0.5-20 kV. Non-uniformity in distribution of plasma across the workpiece is reduced by providing a curvature in a peripheral edge annulus of said electrode whereby the peripheral annulus slopes away from the workpiece support surface. The peripheral edge annulus corresponds to a small fraction of an area of said electrode. The remainder of the electrode encircled by the peripheral annulus has a flat shape.

摘要翻译： 在等离子体反应器中，RF偏置功率从RF偏置功率发生器施加到下面并与工件绝缘并且具有位于工件的圆周边缘周围的圆周边缘的盘形电极。 RF偏压功率足以在工件上产生大约0.5-20 kV的高RF偏置电压。 通过在所述电极的外围边缘环中提供曲率来减小等离子体在工件上的分布的不均匀性，由此外围环形空间远离工件支撑表面。 外围边缘环对应于所述电极的一小部分面积。 由外围环圈包围的电极的其余部分具有平坦的形状。

公开(公告)号：US08288257B2

公开(公告)日：2012-10-16

申请号：US12606897

申请日：2009-10-27

申请人： Matthew D. Scotney-Castle ,  Majeed A. Foad ,  Peter I. Porshnev

发明人： Matthew D. Scotney-Castle ,  Majeed A. Foad ,  Peter I. Porshnev

IPC分类号： H01L21/425

CPC分类号： H01L21/2236 ,  H01J37/32412

摘要： Methods for implanting material into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting material into a substrate includes providing a substrate into a processing chamber, the substrate comprising a substrate surface having a material layer formed thereon, generating a first plasma of a non-dopant processing gas, exposing the material layer to the plasma of the non-dopant processing gas, generating a second plasma of a dopant processing gas including a reacting gas adapted to produce dopant ions, and implanting dopant ions from the plasma into the material layer. The method may further include a cleaning or etch process.

摘要翻译： 提供了通过等离子体浸没离子注入工艺将材料注入衬底的方法。 在一个实施例中，用于将材料注入衬底的方法包括将衬底提供到处理室中，所述衬底包括其上形成有材料层的衬底表面，产生非掺杂剂处理气体的第一等离子体，暴露材料层 涉及非掺杂剂处理气体的等离子体，产生掺杂剂处理气体的第二等离子体，所述掺杂剂处理气体包括适于产生掺杂剂离子的反应气体，以及将等离子体中的掺杂剂离子注入材料层。 该方法还可以包括清洁或蚀刻工艺。

公开(公告)号：US08129261B2

公开(公告)日：2012-03-06

申请号：US12606877

申请日：2009-10-27

申请人： Peter I. Porshnev ,  Matthew D. Scotney-Castle ,  Majeed A. Foad

发明人： Peter I. Porshnev ,  Matthew D. Scotney-Castle ,  Majeed A. Foad

IPC分类号： H01L21/265 ,  H01L21/302 ,  H01L21/322

CPC分类号： H01L21/2236 ,  H01J37/32412

摘要： Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting ions into a substrate includes providing a substrate into a processing chamber, the substrate comprising substrate surface having one or more features formed therein and each feature having one or more horizontal surfaces and one or more vertical surfaces, generating a plasma from a gas mixture including a reacting gas adapted to produce ions, depositing a material layer on the substrate surface and on at least one horizontal surface of the substrate feature, implanting ions from the plasma into the substrate by an isotropic process into at least one horizontal surface and into at least one vertical surface, and etching the material layer on the substrate surface and the at least one horizontal surface by an anisotropic process.

摘要翻译： 提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。 在一个实施例中，用于将离子注入到衬底中的方法包括将衬底提供到处理室中，所述衬底包括具有形成在其中的一个或多个特征的衬底表面，并且每个特征具有一个或多个水平表面和一个或多个垂直表面， 来自包括适于产生离子的反应气体的气体混合物的等离子体，在衬底表面上沉积材料层和在衬底特征的至少一个水平表面上，通过各向同性方法将离子从等离子体注入到衬底中至少 一个水平表面并且进入至少一个垂直表面，并且通过各向异性工艺蚀刻衬底表面上的材料层和至少一个水平表面。