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1.发明授权公开(公告)号：US08830360B1
公开(公告)日：2014-09-09
申请号：US13218152
申请日：2011-08-25
申请人： Peter Jeffrey Burt , Sek Meng Chai , David Chao Zhang , Michael Raymond Piacentino , Gooitzen Siemen van der Wal , Peter Alan Levine , Thomas Lee Vogelsong , John Robertson Tower
发明人： Peter Jeffrey Burt , Sek Meng Chai , David Chao Zhang , Michael Raymond Piacentino , Gooitzen Siemen van der Wal , Peter Alan Levine , Thomas Lee Vogelsong , John Robertson Tower
CPC分类号： H04N5/21 , H04N5/23277 , H04N5/243
摘要： A method and apparatus for optimizing image quality based on scene content comprising a sensor for generating a sequence of frames where each frame in the sequence of frames comprises content representing a scene and a digital processor, coupled to the sensor, for performing scene content analysis and for establishing a window defining a number of input frames from the sensor and processed output frames, and for aligning and combining the number of frames in the window to form an output frame, wherein sensor parameters and frame combination parameters are adjusted based on scene content.
摘要翻译： 一种用于基于场景内容优化图像质量的方法和装置，包括用于生成帧序列的传感器，其中帧序列中的每个帧包括表示场景的内容和耦合到传感器的数字处理器，用于执行场景内容分析，以及 用于建立从传感器和经处理的输出帧定义多个输入帧的窗口，以及用于对齐和组合窗口中的帧数以形成输出帧，其中基于场景内容调整传感器参数和帧组合参数。
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公开(公告)号：US08558160B2
公开(公告)日：2013-10-15
申请号：US13114694
申请日：2011-05-24
IPC分类号： H01L27/146
CPC分类号： H04N5/378 , H04N5/35509
摘要： A non-linear conversion capability within an on-chip, per-column analog-to-digital converter (ADC) is provided to expand a compressed analog signal such that the resulting digital output that has a predetermined (linear or non-linear) mapping with respect to input brightness level of an incoming light signal to a row of pixels. The predetermined mapping may also be provided by a non-linear amplifier coupled to a linear or non-linear ADC and a resulting compressed non-linear digital representation at the output of the ADC is substantially linearized by an on-chip or an off-chip look-up table (LUT).
摘要翻译： 提供片内，每列模数转换器（ADC）中的非线性转换能力以扩展压缩模拟信号，使得所得到的数字输出具有预定的（线性或非线性）映射 相对于输入光信号到一行像素的输入亮度水平。 预定的映射也可以由耦合到线性或非线性ADC的非线性放大器提供，并且在ADC的输出端产生的压缩非线性数字表示基本上由片上或片外 查找表（LUT）。
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公开(公告)号：US20110290983A1
公开(公告)日：2011-12-01
申请号：US13114694
申请日：2011-05-24
IPC分类号： H01L27/146
CPC分类号： H04N5/378 , H04N5/35509
摘要： A non-linear conversion capability within an on-chip, per-column analog-to-digital converter (ADC) is provided to expand a compressed analog signal such that the resulting digital output that has a predetermined (linear or non-linear) mapping with respect to input brightness level of an incoming light signal to a row of pixels. The predetermined mapping may also be provided by a non-linear amplifier coupled to a linear or non-linear ADC and a resulting compressed non-linear digital representation at the output of the ADC is substantially linearized by an on-chip or an off-chip look-up table (LUT).
摘要翻译： 提供片内，每列模数转换器（ADC）中的非线性转换能力以扩展压缩模拟信号，使得所得到的数字输出具有预定的（线性或非线性）映射 相对于输入光信号到一行像素的输入亮度水平。 预定的映射也可以由耦合到线性或非线性ADC的非线性放大器提供，并且在ADC的输出端产生的压缩非线性数字表示基本上由片上或片外 查找表（LUT）。
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公开(公告)号：US08654232B2
公开(公告)日：2014-02-18
申请号：US13215799
申请日：2011-08-23
申请人： Peter Alan Levine , Rui Zhu , John Robertson Tower
发明人： Peter Alan Levine , Rui Zhu , John Robertson Tower
IPC分类号： H04N3/14 , H01L31/062
CPC分类号： H04N5/33 , H01L27/14609 , H01L27/14627 , H01L27/14629 , H01L27/1464 , H04N5/374
摘要： A pixel design is disclosed. The pixel includes a photo-sensitive element. A first reflective layer substantially overlies the photo-sensitive element. A second reflective layer substantially underlies the photo-sensitive element and forms a cavity with the first reflective layer that is non-resonant with respect to photon absorption. An aperture is formed in either the first reflective layer or the second reflective layer. When electromagnetic radiation enters the aperture, the first reflective layer and the second reflective layer are configured to reflect the electromagnetic radiation substantially toward each other until substantially absorbed in the cavity.
摘要翻译： 公开了像素设计。 像素包括光敏元件。 基本上覆盖光敏元件的第一反射层。 第二反射层基本上位于感光元件下面，并且形成与第一反射层相对于光子吸收不共振的空腔。 在第一反射层或第二反射层中形成孔。 当电磁辐射进入孔径时，第一反射层和第二反射层构造成基本上彼此相对地反射电磁辐射，直到基本上被吸收在空腔中。
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5.发明授权CCD imager constructed with CMOS fabrication techniques and back illuminated imager with improved light capture 有权采用CMOS制造技术构建的CCD成像仪和具有改进的光捕获功能的背光照明成像仪公开(公告)号：US07265397B1
公开(公告)日：2007-09-04
申请号：US09942835
申请日：2001-08-30
申请人： John Robertson Tower , Peter Alan Levine , Pradyumna Kumar Swain , Nathaniel Joseph McCaffrey , Taner Dosluoglu
发明人： John Robertson Tower , Peter Alan Levine , Pradyumna Kumar Swain , Nathaniel Joseph McCaffrey , Taner Dosluoglu
IPC分类号： H01L27/148 , H01L29/768
CPC分类号： H01L27/14806 , H01L27/1464 , H01L27/14689 , H04N5/335 , H04N5/372 , H04N5/37455
摘要： An optical sensor circuit for generating signals corresponding to received photoelectrons is formed on a single monolithic substrate and includes a charge coupled device (CCD) array. The array is formed of a plurality of pixels constructed by a standard CMOS process. Each pixel is formed of at least one charge well of minority carriers and a gate oxide layer overlaying the at least one charge well. At least two spaced gate electrodes corresponding in position to the at least two charge wells overlays the gate oxide layer. The space between adjacent electrodes defines a gap to transfer charge between adjacent ones of at the least two spaced gate electrodes and the gap is stabilized. A back-illuminated imager is also described in which photocarriers are diverted from devices integrated with the pixel by a PN junction formed in the pixel structure.
摘要翻译： 用于产生与接收的光电子相对应的信号的光学传感器电路形成在单个单片基板上，并且包括电荷耦合器件（CCD）阵列。 阵列由通过标准CMOS工艺构成的多个像素形成。 每个像素由少数载流子的至少一个电荷阱和覆盖至少一个电荷阱的栅极氧化物层形成。 至少两个对应于位于至少两个电荷阱的位置的间隔开的栅极覆盖栅极氧化物层。 相邻电极之间的空间限定了在至少两个间隔开的栅极电极之间的相邻电极之间传输电荷的间隙，并且间隙被稳定。 还描述了背照光成像器，其中光载流子通过形成在像素结构中的PN结从与像素集成的器件转移。
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6.发明授权公开(公告)号：US06657706B2
公开(公告)日：2003-12-02
申请号：US10107966
申请日：2002-03-27
IPC分类号： G01C308
摘要： A method and apparatus for resolving relative times-of-arrival of a plurality of light pulses includes a plurality of drift-field detectors. Each drift-field detector includes a light sensor and a semiconductor drift region. Each light sensor generates an electrical charge from at least one of the plurality of light pulses. Each semiconductor drift region receives the electrical charge from its respective light sensor and, pursuant to an electric field therein, produces a spatial charge distribution. The spatial charge distribution for each of the semiconductor drift regions is stored in an analog storage device associated therewith. The relative positions of the charge distributions in the semiconductor drift regions are used to calculate the relative times-of-arrival of the light pulses.
摘要翻译： 用于分辨多个光脉冲的相对时间的方法和装置包括多个漂移场检测器。 每个漂移场检测器包括光传感器和半导体漂移区。 每个光传感器从多个光脉冲中的至少一个产生电荷。 每个半导体漂移区域从其相应的光传感器接收电荷，并且根据其中的电场产生空间电荷分布。 每个半导体漂移区域的空间电荷分布被存储在与其相关联的模拟存储设备中。 使用半导体漂移区域中的电荷分布的相对位置来计算光脉冲的相对到达时间。
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公开(公告)号：US20090295952A1
公开(公告)日：2009-12-03
申请号：US12128890
申请日：2008-05-29
IPC分类号： H04N5/335
CPC分类号： H04N5/365 , H01L27/14609 , H01L27/14643 , H04N5/369
摘要： A method and apparatus for equalizing gain in an array of electron multiplication (EM) pixels is disclosed, each pixel having one or more impact ionization gain stages with implants to achieve charge transfer directionality and comprising a phase 1 clocked gate, an EM clocked gate, and two DC gates formed between the phase 1 clocked gate and the EM clocked gate, comprising the steps of (a) applying initial voltages to each of the DC gates and the EM clocked gates of at least two pixels of a plurality of pixels; (b) clocking phase 1 clock gates and an EM clock gates associated with the at least two pixels of the plurality of pixels a predetermined number of times to achieve an average pixel intensity value after impact ionization gain; and (c) selectively adjusting the difference in voltage between the DC gate and corresponding EM clocked gate of the at least two pixels of the plurality of pixels until the difference between the resulting pixel intensity values and the average pixel intensity value needed to produce a desired uniform gain image is below a predetermined threshold.
摘要翻译： 公开了一种用于均衡电子倍增（EM）像素阵列中的增益的方法和装置，每个像素具有一个或多个具有植入物的冲击电离增益级，以实现电荷转移方向性，并且包括相位1时钟门，EM时钟门， 和形成在相位1时钟门和EM时钟门之间的两个DC门，包括以下步骤：（a）向多个像素中的至少两个像素的DC门和EM时钟门中的每一个施加初始电压; （b）将预定次数与所述多个像素中的所述至少两个像素相关联的时钟相位1个时钟门和EM时钟门，以实现冲击电离增益之后的平均像素强度值; 以及（c）选择性地调整所述多个像素中的所述至少两个像素的所述DC栅极与所述对应的EM时钟栅极之间的电压差，直到得到的像素强度值与产生所需的像素强度值所需的平均像素强度值之间的差值 均匀增益图像低于预定阈值。
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公开(公告)号：US06433326B1
公开(公告)日：2002-08-13
申请号：US09614765
申请日：2000-07-12
IPC分类号： H04N315
CPC分类号： H04N5/361 , H01L27/14881 , H04N5/33 , H04N5/37213
摘要： A method and apparatus for low light imaging in which a plurality of relatively small detectors forming a line is coupled to a respective cell of a CCD register. A charge indicative of detected image information is provided to the respective cells after the cells are substantially discharged via a drain. The register is read by a control element to define therefrom a row of pixel information.
摘要翻译： 一种用于低光成像的方法和装置，其中形成线的多个相对小的检测器耦合到CCD寄存器的相应单元。 在小区经由排水口基本排出之后，向各个单元提供表示检测到的图像信息的电荷。 寄存器由控制元件读取，以便由其定义一行像素信息。
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9.发明申请P-PIXEL CMOS IMAGERS USING ULTRA-THIN SILICON ON INSULATOR SUBSTRATES (UTSOI) 审中-公开P-PIXEL CMOS成像器在绝缘体衬底（UTSOI）上使用超薄硅公开(公告)号：US20120104464A1
公开(公告)日：2012-05-03
申请号：US13283195
申请日：2011-10-27
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L21/84 , H01L27/14603 , H01L27/14609 , H01L27/1464 , H01L27/14674
摘要： A CMOS image sensor is disclosed. The CMOS image sensor includes a semiconductor substrate having a surface. An epitaxial layer is grown on the surface. A p-type CMOS pixel formed substantially in the epitaxial layer. In one version of the CMOS image sensor, there exists a net n-type dopant concentration profile in the semiconductor substrate and the epitaxial layer which has a maximum value at a predetermined distance from the surface and which decreases monotonically on both sides of the profile from the maximum value within the semiconductor substrate and the epitaxial layer. In another version of the CMOS image sensor, there exists a net n-type dopant concentration profile in the semiconductor substrate and the epitaxial layer which has a maximum value at the surface and which decreases monotonically with increasing distance from the surface within the semiconductor substrate and the epitaxial layer.
摘要翻译： 公开了CMOS图像传感器。 CMOS图像传感器包括具有表面的半导体衬底。 在表面上生长外延层。 基本上形成在外延层中的p型CMOS像素。 在CMOS图像传感器的一个版本中，半导体衬底和外延层中存在净n型掺杂剂浓度分布，该外延层具有距离表面预定距离处的最大值，并且在轮廓的两侧单调减小 半导体衬底和外延层内的最大值。 在CMOS图像传感器的另一个版本中，在半导体衬底和外延层中存在净的n型掺杂剂浓度分布，该外延层在表面具有最大值，并随着距离半导体衬底内的表面的距离的增加而单调减小， 外延层。
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公开(公告)号：US07378634B2
公开(公告)日：2008-05-27
申请号：US11189650
申请日：2005-07-26
CPC分类号： H04N5/238
摘要： Methods and apparatus for imaging light are disclosed. Light is imaged by collecting light, converting the collected light into a electrical charge signal, multiplying the electrical charge signal to produce multiple electrical charge signals with associated levels of gain, converting the electrical charge signals to voltage signals, and developing an output signal from one or more of the voltage signals that represents the collected light. The electrical charge signal may be multiplied using an electron multiplication device associated with multiple taps to produce the electrical charge signal with different levels of gain.
摘要翻译： 公开了用于成像光的方法和装置。 光通过收集光成像，将收集的光转换成电荷信号，将电荷信号相乘以产生具有相关增益水平的多个电荷信号，将电荷信号转换为电压信号，以及从一个 或更多的表示所收集的光的电压信号。 可以使用与多个抽头相关联的电子倍增装置将电荷信号相乘以产生具有不同增益水平的电荷信号。
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