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公开(公告)号:US07053425B2
公开(公告)日:2006-05-30
申请号:US10706767
申请日:2003-11-12
申请人: Peter Micah Sandvik , Vinayak Tilak , Jesse Tucker , Stanton Earl Weaver , David Mulford Shaddock , Jonathan Lloyd Male , John Patrick Lemmon , Mark Allen Woodmansee , Venkatesan Manivannan , Deborah Ann Haitko
发明人: Peter Micah Sandvik , Vinayak Tilak , Jesse Tucker , Stanton Earl Weaver , David Mulford Shaddock , Jonathan Lloyd Male , John Patrick Lemmon , Mark Allen Woodmansee , Venkatesan Manivannan , Deborah Ann Haitko
IPC分类号: H01L31/312 , G01N27/12
CPC分类号: G01N27/4141 , G01N33/0037 , Y02A50/245
摘要: A gas sensor device including a semiconductor substrate; one or more catalytic gate-electrodes deposited on a surface of the semiconductor substrate; one or more ohmic contacts deposited on the surface of the semiconductor substrate and a passivation layer deposited on at least a portion of the surface; wherein the semiconductor substrate includes a material selected from the group consisting of silicon carbide, diamond, Group III nitrides, alloys of Group III nitrides, zinc oxide, and any combinations thereof.
摘要翻译: 一种气体传感器装置,包括半导体衬底; 沉积在半导体衬底的表面上的一个或多个催化栅电极; 沉积在半导体衬底的表面上的一个或多个欧姆接触层和沉积在该表面的至少一部分上的钝化层; 其中所述半导体衬底包括选自碳化硅,金刚石,III族氮化物,III族氮化物的合金,氧化锌及其任何组合的材料。
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公开(公告)号:US20130105816A1
公开(公告)日:2013-05-02
申请号:US13281638
申请日:2011-10-26
申请人: Avinash Srikrishnan Kashyap , David Mulford Shaddock , Emad Andarawis Andarawis , Peter Micah Sandvik , Stephen Daley Arthur , Vinayak Tilak
发明人: Avinash Srikrishnan Kashyap , David Mulford Shaddock , Emad Andarawis Andarawis , Peter Micah Sandvik , Stephen Daley Arthur , Vinayak Tilak
CPC分类号: H01L21/56 , H01L23/3185 , H01L29/0657 , H01L29/1608 , H01L29/2003 , H01L29/861 , H01L29/8618 , H01L2924/0002 , H01L2924/00
摘要: A method of forming a silicon carbide transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The TVS assembly includes a semiconductor die in a mesa structure that includes a first layer of a first wide band gap semiconductor having a conductivity of a first polarity, a second layer of the first or a second wide band gap semiconductor having a conductivity of a second polarity coupled in electrical contact with the first layer wherein the second polarity is different than the first polarity. The TVS assembly also includes a third layer of the first, the second, or a third wide band gap semiconductor having a conductivity of the first polarity coupled in electrical contact with the second layer. The layer having a conductivity of the second polarity is lightly doped relative to the layers having a conductivity of the first polarity.
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公开(公告)号:US08530902B2
公开(公告)日:2013-09-10
申请号:US13281638
申请日:2011-10-26
申请人: Avinash Srikrishnan Kashyap , David Mulford Shaddock , Emad Andarawis Andarawis , Peter Micah Sandvik , Stephen Daley Arthur , Vinayak Tilak
发明人: Avinash Srikrishnan Kashyap , David Mulford Shaddock , Emad Andarawis Andarawis , Peter Micah Sandvik , Stephen Daley Arthur , Vinayak Tilak
IPC分类号: H01L29/15
CPC分类号: H01L21/56 , H01L23/3185 , H01L29/0657 , H01L29/1608 , H01L29/2003 , H01L29/861 , H01L29/8618 , H01L2924/0002 , H01L2924/00
摘要: A method of forming a silicon carbide transient voltage suppressor (TVS) assembly and a system for a transient voltage suppressor (TVS) assembly are provided. The TVS assembly includes a semiconductor die in a mesa structure that includes a first layer of a first wide band gap semiconductor having a conductivity of a first polarity, a second layer of the first or a second wide band gap semiconductor having a conductivity of a second polarity coupled in electrical contact with the first layer wherein the second polarity is different than the first polarity. The TVS assembly also includes a third layer of the first, the second, or a third wide band gap semiconductor having a conductivity of the first polarity coupled in electrical contact with the second layer. The layer having a conductivity of the second polarity is lightly doped relative to the layers having a conductivity of the first polarity.
摘要翻译: 提供了形成碳化硅瞬态电压抑制器(TVS)组件的方法和用于瞬态电压抑制器(TVS)组件的系统。 TVS组件包括台面结构中的半导体管芯,其包括具有第一极性的导电率的第一宽带隙半导体的第一层,具有第二极导电率的第一或第二宽带隙半导体的第二层 极性与第一层电接触,其中第二极性不同于第一极性。 TVS组件还包括具有与第二层电接触的第一极性的导电性的第一,第二或第三宽带隙半导体的第三层。 相对于具有第一极性的导电性的层,具有第二极性的导电性的层被轻掺杂。
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公开(公告)号:US20100328896A1
公开(公告)日:2010-12-30
申请号:US12826337
申请日:2010-06-29
申请人: David Mulford Shaddock , Deng Tao , Hendrik Pieter Jacobus De Bock , Dalong Zhong , Christopher Michael Eastman , Kevin Matthew Durocher , Stanton Earl Weaver, JR.
发明人: David Mulford Shaddock , Deng Tao , Hendrik Pieter Jacobus De Bock , Dalong Zhong , Christopher Michael Eastman , Kevin Matthew Durocher , Stanton Earl Weaver, JR.
CPC分类号: H01L23/433 , B82Y30/00 , B82Y40/00 , C25D5/022 , C25D7/12 , F28F2013/006 , F28F2255/00 , H01L2924/0002 , Y10T29/49 , Y10T428/30 , H01L2924/00
摘要: An article and method of forming the article is disclosed. The article includes a heat source, a heat-sink, and a thermal interface element having a plurality of freestanding nanosprings, a top layer, and a bottom layer. The nanosprings, top layer, and the bottom layers of the article include at least one inorganic material. The article can be prepared using a number of methods including the methods such as GLAD and electrochemical deposition.
摘要翻译: 公开了一种形成物品的制品和方法。 该制品包括热源,散热器和具有多个独立纳米脉冲,顶层和底层的热界面元件。 制品的纳米螺旋,顶层和底层包括至少一种无机材料。 该制品可以使用许多方法制备,包括诸如GLAD和电化学沉积的方法。
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公开(公告)号:US08405996B2
公开(公告)日:2013-03-26
申请号:US12826337
申请日:2010-06-29
申请人: David Mulford Shaddock , Deng Tao , Hendrik Pieter Jacobus De Bock , Dalong Zhong , Christopher Michael Eastman , Kevin Matthew Durocher , Stanton Earl Weaver, Jr.
发明人: David Mulford Shaddock , Deng Tao , Hendrik Pieter Jacobus De Bock , Dalong Zhong , Christopher Michael Eastman , Kevin Matthew Durocher , Stanton Earl Weaver, Jr.
IPC分类号: H05K7/20
CPC分类号: H01L23/433 , B82Y30/00 , B82Y40/00 , C25D5/022 , C25D7/12 , F28F2013/006 , F28F2255/00 , H01L2924/0002 , Y10T29/49 , Y10T428/30 , H01L2924/00
摘要: An article and method of forming the article is disclosed. The article includes a heat source, a heat-sink, and a thermal interface element having a plurality of freestanding nanosprings, a top layer, and a bottom layer. The nanosprings, top layer, and the bottom layers of the article include at least one inorganic material. The article can be prepared using a number of methods including the methods such as GLAD and electrochemical deposition.
摘要翻译: 公开了一种形成物品的制品和方法。 该制品包括热源,散热器和具有多个独立纳米脉冲,顶层和底层的热界面元件。 制品的纳米螺旋,顶层和底层包括至少一种无机材料。 该制品可以使用许多方法制备,包括诸如GLAD和电化学沉积的方法。
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公开(公告)号:US20120155044A1
公开(公告)日:2012-06-21
申请号:US12971862
申请日:2010-12-17
申请人: David Mulford Shaddock , Vinayak Tilak , Tan Zhang
发明人: David Mulford Shaddock , Vinayak Tilak , Tan Zhang
CPC分类号: H05K3/328 , H05K3/4629 , H05K2201/10151 , H05K2201/10659 , H05K2201/10674 , Y10T29/49155
摘要: An apparatus includes a set of first metal contact pads disposed on a low temperature co-fired ceramic substrate. A plurality of metalized interconnectors extend between a digital electronic component and the low temperature co-fired ceramic substrate. The apparatus is configured to operate at a temperature greater than 250 degrees Celsius.
摘要翻译: 一种装置包括设置在低温共烧陶瓷基板上的一组第一金属接触焊盘。 多个金属化互连器在数字电子部件和低温共烧陶瓷基板之间延伸。 该装置被配置为在大于250摄氏度的温度下操作。
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公开(公告)号:US07313965B2
公开(公告)日:2008-01-01
申请号:US11509397
申请日:2006-08-25
申请人: Vinayak Tilak , Jie Jiang , David Mulford Shaddock , Stacey Joy Kennerly , David Richard Esler , Aaron Jay Knobloch
发明人: Vinayak Tilak , Jie Jiang , David Mulford Shaddock , Stacey Joy Kennerly , David Richard Esler , Aaron Jay Knobloch
IPC分类号: G01L9/00
CPC分类号: G01H9/00 , G01L1/044 , G01L1/148 , G01L1/16 , G01L9/0052 , G01L9/0073 , G01L9/0075 , G01L9/008 , G01L9/085 , G01L19/0681
摘要: A high-temperature pressure sensor that includes a dielectric layer. The pressure sensor also includes a substrate capable of withstanding temperatures greater than 450° C. without entering a phase change, at least one semiconducting material deposited on the sapphire substrate, and a silicon dioxide layer deposited over the semiconducting material. One aspect of the pressure sensor includes a second semiconducting material.
摘要翻译: 一种包括电介质层的高温压力传感器。 压力传感器还包括能够耐受大于450℃的温度而不进入相变的衬底,沉积在蓝宝石衬底上的至少一种半导体材料和沉积在半导体材料上的二氧化硅层。 压力传感器的一个方面包括第二半导体材料。
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公开(公告)号:US08121813B2
公开(公告)日:2012-02-21
申请号:US12361469
申请日:2009-01-28
申请人: Zhiyuan Ren , Wayne Charles Hasz , Emad Andarawis Andarawis , David So Keung Chan , David Mulford Shaddock , John Harry Down , Samhita Dasgupta , William Lee Herron , Cheryl Lynn Herron, legal representative , David Walter Parry , David Richard Esler , Mahadevan Balasubramaniam
发明人: Zhiyuan Ren , Wayne Charles Hasz , Emad Andarawis Andarawis , David So Keung Chan , David Mulford Shaddock , John Harry Down , Samhita Dasgupta , William Lee Herron , David Walter Parry , David Richard Esler , Mahadevan Balasubramaniam
IPC分类号: G06F11/00
CPC分类号: G01B7/14 , F01D21/003
摘要: A processing system for clearance estimation in a rotating machine includes one or more sensors and one or more digital signal processors for calculating the estimated clearance. The processing system may include techniques for obtaining real-time clearance estimates and techniques for obtaining averaged clearance estimates. Aspects of the processing system may also include a method of switching between real-time clearance estimates and averaged clearance estimates depending on the operating conditions of the rotating machine. Other aspects of the processing system include the use of two digital signal processors: a first digital signal processor configured to receive signals from a clearance sensor and perform a first set of high speed processing tasks, and a second digital signal processor configured to receive signals from the first digital signal processor and perform a second set of lower speed processing tasks.
摘要翻译: 用于旋转机器中的间隙估计的处理系统包括一个或多个传感器和用于计算估计间隙的一个或多个数字信号处理器。 处理系统可以包括用于获得实时清除率估计的技术和用于获得平均清除率估计的技术。 处理系统的方面还可以包括根据旋转机器的操作条件在实时间隙估计和平均间隙估计之间切换的方法。 处理系统的其他方面包括使用两个数字信号处理器:第一数字信号处理器,被配置为从间隙传感器接收信号并执行第一组高速处理任务;以及第二数字信号处理器,被配置为从 第一数字信号处理器并执行第二组较低速处理任务。
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公开(公告)号:US07333913B2
公开(公告)日:2008-02-19
申请号:US11167434
申请日:2005-06-27
申请人: Emad Andarawis Andarawis , Mahadevan Balasubramaniam , Todd Alan Anderson , Samhita Dasgupta , David Mulford Shaddock , Shobhana Mani , Jie Jiang
发明人: Emad Andarawis Andarawis , Mahadevan Balasubramaniam , Todd Alan Anderson , Samhita Dasgupta , David Mulford Shaddock , Shobhana Mani , Jie Jiang
IPC分类号: G01B5/14
CPC分类号: G01B7/144
摘要: A clearance measurement system is provided. The clearance measurement system includes a reference geometry disposed on a first object having an otherwise continuous surface geometry and a sensor disposed on a second object, wherein the sensor is configured to generate a first signal representative of a first sensed parameter from the first object and a second signal representative of a second sensed parameter from the reference geometry. The clearance measurement system also includes a processing unit configured to process the first and second signals to estimate a clearance between the first and second objects based upon a measurement difference between the first and second sensed parameters.
摘要翻译: 提供了间隙测量系统。 间隙测量系统包括设置在具有另外连续的表面几何形状的第一物体上的参考几何形状和设置在第二物体上的传感器,其中传感器被配置为产生表示来自第一物体的第一感测参数的第一信号,以及 第二信号表示来自参考几何的第二感测参数。 间隙测量系统还包括处理单元,其被配置为基于第一和第二感测参数之间的测量差异来处理第一和第二信号以估计第一和第二对象之间的间隙。
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公开(公告)号:US09113583B2
公开(公告)日:2015-08-18
申请号:US13563132
申请日:2012-07-31
CPC分类号: H05K3/282 , H01L2224/16225 , H05K2203/1194
摘要: An apparatus includes a substrate and a plurality of conductive traces formed on the substrate. The conductive traces are doped with a concentration of an aluminum material forming a protective layer as a portion of the plurality of conductive traces to inhibit oxidation. A set of first metal contact pads are formed in contact with the plurality of conductive traces. The substrate, the plurality of conductive traces and the set of first metal contact pads define an electronic circuit board configured to operate at a temperature greater than 200 degrees Celsius. A high operating temperature electronic device is configured in electrical communication with the conductive traces defining an assembly configured to operate at a temperature greater than 200 degrees Celsius.
摘要翻译: 一种装置包括基板和形成在基板上的多个导电迹线。 导电迹线掺杂有形成保护层的铝材料的浓度作为多个导电迹线的一部分以抑制氧化。 形成与多个导电迹线接触的一组第一金属接触焊盘。 衬底,多个导电迹线和第一金属接触焊盘组限定了配置成在大于200摄氏度的温度下操作的电子电路板。 高工作温度电子器件被配置为与导电迹线电连通,导电迹线限定被配置为在大于200摄氏度的温度下操作的组件。
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