Method of forming ruthenium-based thick-film resistors
    2.
    发明授权
    Method of forming ruthenium-based thick-film resistors 有权
    形成钌基厚膜电阻的方法

    公开(公告)号:US06180164B2

    公开(公告)日:2001-01-30

    申请号:US09178758

    申请日:1998-10-26

    IPC分类号: B05D512

    摘要: A method for forming a ruthenium-based thick-film resistor having copper terminations, in which the thick-film resistor is fired in a non-oxidizing atmosphere so as not to oxidize the copper terminations yet without reducing the thick-film resistor to metallic ruthenium. A ruthenium-based thick-film resistor ink having a matrix material and an organic vehicle is deposited on a copper layer that will form the terminations for the thick-film resistor formed by firing the ink. The organic vehicle of the ink is then burned out at a temperature of less than 350° C. in an oxidizing atmosphere, such as air. Thereafter, the ink is fired in a non-oxidizing atmosphere (e.g., nitrogen) at a temperature sufficient to sinter the matrix material and yield a ruthenium-based thick-film resistor with copper terminations formed by the copper layer.

    摘要翻译: 一种用于形成具有铜端接的钌基厚膜电阻器的方法,其中在非氧化气氛中烧结厚膜电阻器,以便不将氧化铜端子而不将厚膜电阻器还原成金属钌 。 将具有基质材料和有机载体的钌基厚膜电阻墨水沉积在铜层上,该铜层将形成通过烧制墨形成的厚膜电阻器的端子。 然后在氧化气氛如空气中,在小于350℃的温度下将油墨的有机载体烧尽。 此后,在足以烧结基质材料的温度下,在非氧化性气氛(例如氮气)中烧制油墨,得到由铜层形成的铜终止物的钌基厚膜电阻器。

    Metal diaphragm sensor with polysilicon sensing elements and methods
therefor
    4.
    发明授权
    Metal diaphragm sensor with polysilicon sensing elements and methods therefor 失效
    具有多晶硅感应元件的金属膜片传感器及其方法

    公开(公告)号:US6022756A

    公开(公告)日:2000-02-08

    申请号:US127291

    申请日:1998-07-31

    IPC分类号: G01L9/00 H01L21/00

    CPC分类号: G01L9/0055

    摘要: A sensor (10) having polysilicon strain-sensing elements (20) on a metal diaphragm (16). A thick-film insulating layer (18) covers the metal diaphragm (16), and thin-film polysilicon resistive elements (20) are formed on the thick-film insulating layer (18). Thick-film conductors (22) are formed on the thick-film insulating layer (18) and contact the thin-film polysilicon resistive elements (20) to form electrical interconnects to the resistive elements (20). The thick-film conductors (22) preferably contain silicon in order to reduce diffusion of silicon from the polysilicon resistive elements (20). The thick-film insulating layer (18) may be made up of a number of individual thick-film layers, the uppermost of which is stable and nonreactive with the thin-film polysilicon resistive elements (20) and the thick-film conductors (22) at temperatures of at least 600.degree. C. A passivation layer (24) overlies the thin-film polysilicon resistive elements (20) and the thick-film conductors (22). The sensor (10) can be made sufficiently rugged to be used as a structural member of a fluid-containing vessel.

    摘要翻译: 一种在金属隔膜(16)上具有多晶硅应变传感元件(20)的传感器(10)。 厚膜绝缘层(18)覆盖金属膜(16),在厚膜绝缘层(18)上形成薄膜多晶硅电阻元件(20)。 在厚膜绝缘层(18)上形成厚膜导体(22),并与薄膜多晶硅电阻元件(20)接触以形成与电阻元件(20)的电互连。 厚膜导体(22)优选地含有硅以便减少硅从多晶硅电阻元件(20)的扩散。 厚膜绝缘层(18)可以由多个单独的厚膜层组成,其最上面的薄膜层与薄膜多晶硅电阻元件(20)和厚膜导体(22)是稳定的和非反应的 )在至少600℃的温度下。钝化层(24)覆盖薄膜多晶硅电阻元件(20)和厚膜导体(22)。 传感器(10)可以制成足够坚固的以用作含流体容器的结构构件。

    Dual-solder process for enhancing reliability of thick-film hybrid
circuits
    5.
    发明授权
    Dual-solder process for enhancing reliability of thick-film hybrid circuits 失效
    双焊接工艺,用于增强厚膜混合电路的可靠性

    公开(公告)号:US5803344A

    公开(公告)日:1998-09-08

    申请号:US709886

    申请日:1996-09-09

    摘要: A high temperature thick-film hybrid circuit is characterized by a surface-mount circuit component that is electrically interconnected with a conductor. The surface-mount circuit component of the thick-film hybrid circuit is bonded to the conductor with a soldering technique employing dual-solder layers. The dual-solder layers enable component attachment to the conductor at a temperature below the maximum processing temperature of the component, while forming a solder joint that exhibits suitable adhesion properties at temperatures in excess of 165.degree. C. The dual-solder layers can be chosen to inhibit tin diffusion from the solder, silver leaching from the conductor, and the formation of a brittle intermetallic at the solder-conductor interface.

    摘要翻译: 高温厚膜混合电路的特征在于与导体电互连的表面安装电路部件。 厚膜混合电路的表面安装电路部件通过采用双焊料层的焊接技术接合到导体上。 双焊料层能够在低于组件的最大加工温度的温度下将元件附着到导体,同时形成在超过165℃的温度下表现出合适的粘合性质的焊料接头。可以选择双焊料层 以抑制锡从焊料扩散,银从导体浸出,以及在焊料 - 导体界面处形成脆性金属间化合物。

    Diffusion-barrier materials for thick-film piezoresistors and sensors
formed therewith
    7.
    发明授权
    Diffusion-barrier materials for thick-film piezoresistors and sensors formed therewith 失效
    用于厚膜压敏电阻器和由其形成的传感器的扩散阻挡材料

    公开(公告)号:US5898359A

    公开(公告)日:1999-04-27

    申请号:US994113

    申请日:1997-12-19

    CPC分类号: H01C10/103

    摘要: A thick-film strain-sensing structure for a media-compatible, high-pressure sensor. The strain-sensing structure generally includes a metal diaphragm, at least one electrical-insulating layer on the diaphragm, an interface layer on the electrical-insulating layer, and at least one thick-film piezoresistor on the interface layer for sensing deflection of the diaphragm. The interface layer and the electrical-insulating layers are preferably formed by thick-film processing, as done for the piezoresistors. For compatibility with the metal diaphragm, the electrical-insulating layer has a CTE near that of the diaphragm. The interface layer is formulated to inhibit and control diffusion of the electrical-insulating layers into the piezoresistors. For this purpose, the interface layer is formed from a composition that contains, in addition to a suitable organic media, alumina, zinc oxide, and at least one glass frit mixture comprising lead oxide, a source of boron oxide such as boric acid, silica and alumina. Additional constituents of the interface layer preferably include titania, cupric oxide, manganese carbonate as a source for manganese monoxide, and cobalt carbonate as a source of cobalt oxide.

    摘要翻译: 用于介质兼容的高压传感器的厚膜应变感应结构。 应变感测结构通常包括金属隔膜,隔膜上的至少一个电绝缘层,电绝缘层上的界面层和界面层上的至少一个厚膜压敏电阻,用于感测隔膜的偏转 。 界面层和电绝缘层优选通过厚膜加工形成,如对压敏电阻所做的那样。 为了与金属隔膜的兼容性,电绝缘层具有靠近隔膜的CTE。 配制界面层以抑制和控制电绝缘层扩散到压敏电阻器中。 为此目的,界面层由除合适的有机介质之外还包含氧化铝,氧化锌和至少一种玻璃料混合物的组合物形成,所述混合物包含氧化铅,氧化硼源如硼酸,二氧化硅 和氧化铝。 界面层的另外的成分优选包括二氧化钛,氧化铜,作为一氧化碳源的碳酸锰和作为氧化钴源的碳酸钴。

    Method for increasing fitness level while losing body weight
    8.
    发明申请
    Method for increasing fitness level while losing body weight 审中-公开
    降低身体健康水平的方法

    公开(公告)号:US20070238593A1

    公开(公告)日:2007-10-11

    申请号:US11732986

    申请日:2007-04-05

    IPC分类号: G06Q10/00 A63B23/00

    摘要: A method of six (6) weeks duration for increasing body fitness level while reducing health risks, reducing inches of girth for body parts and losing body weight is provided. The method is comprised of three steps: (1) Body Cleansing, (2) Muscle Toning and Strengthening, and (3) Body Balancing. Each step is of two weeks duration and is comprised of a specific eating plan (in the case of step 1 includes a water intake regimen) and a specific exercise plan. The eating plan and exercise plan of each step is specifically formulated to provide upon completion of the six (6) weeks significant weight loss, lower BMI and reduced body part girth.

    摘要翻译: 提供六(6)周持续时间的方法来增加身体健康水平,同时降低健康风险,减少身体部位的环身长度和体重下降。 该方法包括三个步骤:(1)身体清洁,(2)肌肉调理和加强,以及(3)身体平衡。 每个步骤都是两周的时间,包括特定的饮食计划(在步骤1的情况下,包括取水方案)和具体的运动计划。 每个步骤的饮食计划和运动计划是特别制定的,以在六(6)周完成显着减肥,降低体重指数和减少身体部位围度时提供。

    Thick-film circuits and metallization process
    9.
    发明授权
    Thick-film circuits and metallization process 有权
    厚膜电路和金属化工艺

    公开(公告)号:US6150041A

    公开(公告)日:2000-11-21

    申请号:US344046

    申请日:1999-06-25

    摘要: 16 A thick-film circuit (10) includes an electrically conductive substrate (12), such as stainless steel, and a first layer of a gold-rich conductor (15) applied directly thereon. The gold layer is fired in a non-oxidizing atmosphere, such as nitrogen, to ensure a solid mechanical and electrical connection between the gold and the substrate. A next layer of a silver composition (20) containing a first proportion of silver to a conductive metal is directly applied to the gold layer (15). Preferably, the composition (20) includes palladium in equal parts with the silver to achieve a secure mechanical and electrical contact with the gold layer with a minimum resistivity. A silver-rich layer (23) is then applied directly onto the intermediate layer. This silver-rich layer (23) is a composition of silver and the conductive metal in a second proportion greater than the first proportion. In one embodiment, this second proportion is three parts silver to one part palladium by weight. The thick-film stack-up (10) provides a minimum resistance conductive path between electrical components mounted on the silver-rich layer (23) and the conductive substrate (12).

    摘要翻译: 16厚膜电路(10)包括诸如不锈钢的导电基底(12)和直接施加在其上的富金导体(15)的第一层。 金层在非氧化性气氛如氮气中烧成,以确保金和基底之间的牢固的机械和电连接。 将含有第一比例的银与导电金属的下一层银组合物(20)直接施加到金层(15)。 优选地,组合物(20)包括与银相等的钯,以实现与金层的最小电阻率的牢固的机械和电接触。 然后将富银层(23)直接施加到中间层上。 该富银层(23)是比第一比例大的第二比例的银和导电金属的组合物。 在一个实施方案中,该第二比例为三份银与一份钯重量。 厚膜堆叠(10)在安装在富含银层(23)和导电衬底(12)之间的电气部件之间提供最小电阻导电路径。