Photopatternable dielectric materials for BEOL applications and methods for use
    5.
    发明授权
    Photopatternable dielectric materials for BEOL applications and methods for use 有权
    用于BEOL应用的光图案介电材料和使用方法

    公开(公告)号:US08029971B2

    公开(公告)日:2011-10-04

    申请号:US12047435

    申请日:2008-03-13

    摘要: Compositions, a method, and a photopatternable blend. The compositions include a blend of a first and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a substituted silsesquioxane polymer. The second polymer is configured to undergo chemical crosslinking with the first polymer, the second polymer, or a combination thereof, upon exposure to light, thermal energy, or a combination thereof. The compositions include a photosensitive acid generator. The method includes forming a film. The film is patternwise imaged, and at least one region is exposed to radiation. After the imaging, the film is baked, wherein at least one exposed region is rendered substantially soluble. After the baking, the film is developed, wherein a relief pattern remains. The relief pattern is exposed to radiation. The relief pattern is baked. The relief pattern is cured. A chemically amplified positive-tone photopatternable blend is also described.

    摘要翻译: 组合,一种方法和一种光图案化混合物。 组合物包括第一和第二聚合物的共混物。 第一聚合物是取代的倍半硅氧烷共聚物。 第二聚合物是取代的倍半硅氧烷聚合物。 第二聚合物被配置为在暴露于光,热能或其组合时与第一聚合物,第二聚合物或其组合进行化学交联。 组合物包括光敏酸产生剂。 该方法包括形成膜。 膜被图案化成像,并且至少一个区域暴露于辐射。 在成像之后,烘烤该膜,其中至少一个曝光区域呈现基本上可溶的。 烘烤后,显影膜,其中保留有浮雕图案。 浮雕图案暴露于辐射。 浮雕图案被烘烤。 浮雕图案被修复。 还描述了化学放大的正色调可光图案化混合物。

    PHOTOPATTERNABLE DIELECTRIC MATERIALS FOR BEOL APPLICATIONS AND METHODS FOR USE
    6.
    发明申请
    PHOTOPATTERNABLE DIELECTRIC MATERIALS FOR BEOL APPLICATIONS AND METHODS FOR USE 有权
    用于BEOL应用的光电介质材料和使用方法

    公开(公告)号:US20090233226A1

    公开(公告)日:2009-09-17

    申请号:US12047435

    申请日:2008-03-13

    IPC分类号: G03F7/004 G03F7/20

    摘要: Compositions, a method, and a photopatternable blend. The compositions include a blend of a first and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a substituted silsesquioxane polymer. The second polymer is configured to undergo chemical crosslinking with the first polymer, the second polymer, or a combination thereof, upon exposure to light, thermal energy, or a combination thereof. The compositions include a photosensitive acid generator. The method includes forming a film. The film is patternwise imaged, and at least one region is exposed to radiation. After the imaging, the film is baked, wherein at least one exposed region is rendered substantially soluble. After the baking, the film is developed, wherein a relief pattern remains. The relief pattern is exposed to radiation. The relief pattern is baked. The relief pattern is cured. A chemically amplified positive-tone photopatternable blend is also described.

    摘要翻译: 组合,一种方法和一种光图案化混合物。 组合物包括第一和第二聚合物的共混物。 第一聚合物是取代的倍半硅氧烷共聚物。 第二聚合物是取代的倍半硅氧烷聚合物。 第二聚合物被配置为在暴露于光,热能或其组合时与第一聚合物,第二聚合物或其组合进行化学交联。 组合物包括光敏酸产生剂。 该方法包括形成膜。 膜被图案化成像,并且至少一个区域暴露于辐射。 在成像之后,烘烤该膜,其中至少一个曝光区域呈现基本上可溶的。 烘烤后,显影膜,其中保留有浮雕图案。 浮雕图案暴露于辐射。 浮雕图案被烘烤。 浮雕图案被修复。 还描述了化学放大的正色调可光图案化混合物。

    Lithographic photoresist composition and process for its use
    10.
    发明授权
    Lithographic photoresist composition and process for its use 有权
    平版光刻胶组合物及其使用方法

    公开(公告)号:US06730452B2

    公开(公告)日:2004-05-04

    申请号:US09771261

    申请日:2001-01-26

    IPC分类号: G03F7039

    摘要: A lithographic photoresist composition is provided that can be used as a chemical amplification photoresist. In a preferred embodiment, the composition is substantially transparent to deep ultraviolet radiation, i.e., radiation of a wavelength less than 250 nm, including 157 nm, 193 nm and 248 nm radiation, and has improved sensitivity and resolution. The composition comprises a fluorinated vinylic polymer, particularly a fluorinated methacrylate, a fluorinated methacrylonitrile, or a fluorinated methacrylic acid, and a photoacid generator. The polymer may be a homopolymer or a copolymer. A process for using the composition to generate resist images on a substrate is also provided, i.e., in the manufacture of integrated circuits or the like.

    摘要翻译: 提供可用作化学扩增光致抗蚀剂的平版光刻胶组合物。 在优选的实施方案中,组合物对深紫外辐射即波长小于250nm(包括157nm,193nm和248nm辐射)的辐射基本上是透明的,并具有改进的灵敏度和分辨率。 组合物包含氟化乙烯基聚合物,特别是氟化甲基丙烯酸酯,氟化甲基丙烯腈或氟化甲基丙烯酸,以及光酸产生剂。 聚合物可以是均聚物或共聚物。 还提供了使用该组合物在衬底上产生抗蚀剂图像的方法,即在集成电路等的制造中。