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公开(公告)号:US20120097330A1
公开(公告)日:2012-04-26
申请号:US12908617
申请日:2010-10-20
申请人: Prahallad Iyengar , Sanjeev Baluja , Dale R. DuBois , Juan Carlos Rocha-Alverez , Thomas Nowak , Scott A. Hendrickson , Yong-Won Lee , Mei-Yee Shek , Li-Qun Xia , Derek R. Witty
发明人: Prahallad Iyengar , Sanjeev Baluja , Dale R. DuBois , Juan Carlos Rocha-Alverez , Thomas Nowak , Scott A. Hendrickson , Yong-Won Lee , Mei-Yee Shek , Li-Qun Xia , Derek R. Witty
IPC分类号: H01L21/465 , H01L21/46
CPC分类号: H01L21/02164 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/463 , C23C16/5096 , H01L21/02274
摘要: A substrate processing system includes a thermal processor or a plasma generator adjacent to a processing chamber. A first processing gas enters the thermal processor or plasma generator. The first processing gas then flows directly through a showerhead into the processing chamber. A second processing gas flows through a second flow path through the showerhead. The first and second processing gases are mixed below the showerhead and a layer of material is deposited on a substrate under the showerhead.
摘要翻译: 衬底处理系统包括与处理室相邻的热处理器或等离子体发生器。 第一处理气体进入热处理器或等离子体发生器。 然后,第一处理气体直接通过喷头流入处理室。 第二处理气体流过穿过喷头的第二流路。 第一和第二处理气体混合在喷淋头下面,并且一层材料沉积在喷头下方的基底上。