公开(公告)号：US06204203B1

公开(公告)日：2001-03-20

申请号：US09172582

申请日：1998-10-14

申请人： Pravin K. Narwankar ,  Turgut Sahin ,  Gregory F. Redinbo ,  Patricia M. Liu ,  Huyen T. Tran

发明人： Pravin K. Narwankar ,  Turgut Sahin ,  Gregory F. Redinbo ,  Patricia M. Liu ,  Huyen T. Tran

IPC分类号： H01L2131

CPC分类号： H01L21/28185 ,  H01J37/32862 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A method of forming a metal oxide dielectric film. According to the present invention an amorphous metal oxide dielectric film is deposited over a substrate utilizing a metal organic precursor. The substrate is then heated in an inert ambient to convert the amorphous metal oxide dielectric to a polycrystalline metal oxide dielectric. The polycrystalline metal dielectric is then heated in a oxygen containing ambients.

摘要翻译： 一种形成金属氧化物电介质膜的方法。 根据本发明，使用金属有机前体将非晶金属氧化物介电膜沉积在衬底上。 然后将衬底在惰性环境中加热以将非晶态金属氧化物电介质转化为多晶金属氧化物电介质。 然后在含氧环境中加热多晶金属电介质。

公开(公告)号：US06638810B2

公开(公告)日：2003-10-28

申请号：US10015203

申请日：2001-11-05

申请人： Mouloud Bakli ,  Steve G. Ghanayem ,  Huyen T. Tran

发明人： Mouloud Bakli ,  Steve G. Ghanayem ,  Huyen T. Tran

IPC分类号： H01L218242

CPC分类号： H01L27/1087 ,  C23C16/0281 ,  C23C16/405 ,  C23C16/56 ,  H01L21/31604 ,  H01L21/318 ,  H01L29/66181

摘要： The invention provides a method for forming a metal nitride film by depositing a metal oxide film on the substrate and exposing the metal oxide film to a nitrating gas to densify the metal oxide and form a metal nitride film. The metal oxide film is deposited by the decomposition of a chemical vapor deposition precursor. The nitrating step comprises exposing the metal oxide film to a thermally or plasma enhanced nitrating gas preferably comprising nitrogen, oxygen, and ammonia. The invention also provides a process for forming a liner/barrier scheme for a metallization stack by forming a metal nitride layer over the substrate by the densification of a metal oxide layer by a nitrating gas depositing a metal liner layer. Optionally, a metal liner layer may be deposited over substrate prior to the metal nitride layer to forma metal/metal nitride liner/barrier scheme. The invention further provides a process to form a microelectronic device comprising forming a first electrode, forming a metal nitride layer over the first electrode by densifying a metal oxide layer by a nitrating gas to form a metal nitride layer, depositing a dielectric layer over the metal nitride layer, and forming a second electrode over the dielectric layer. Alternatively, the metal nitride film may comprise the first and second electrodes.

公开(公告)号：US06319766B1

公开(公告)日：2001-11-20

申请号：US09510582

申请日：2000-02-22

申请人： Mouloud Bakli ,  Steve G. Ghanayem ,  Huyen T. Tran

发明人： Mouloud Bakli ,  Steve G. Ghanayem ,  Huyen T. Tran

IPC分类号： H01L218242

CPC分类号： H01L27/1087 ,  C23C16/0281 ,  C23C16/405 ,  C23C16/56 ,  H01L21/31604 ,  H01L21/318 ,  H01L29/66181

摘要： The invention provides a method for forming a metal nitride film by depositing a metal oxide film on the substrate and exposing the metal oxide film to a nitrating gas to densify the metal oxide and form a metal nitride film. The metal oxide film is deposited by the decomposition of a chemical vapor deposition precursor. The nitrating step comprises exposing the metal oxide film to a thermally or plasma enhanced nitrating gas preferably comprising nitrogen, oxygen, and anunonia. The invention also provides a process for forming a liner/barrier scheme for a metallization stack by forming a metal nitride layer over the substrate by the densification of a metal oxide layer by a nitrating gas depositing a metal liner layer. Optionally, a metal liner layer may be deposited over substrate prior to the metal nitride layer to form a metal/metal nitride liner/barrier scheme. The invention firer provides a process to form a microelectronic device comprising forming a first electrode, forming a metal nitride layer over the first electrode by densifying a metal oxide layer by a nitrating gas to form a metal nitride layer, depositing a dielectric layer over the metal nitride layer, and forming a second electrode over the dielectric layer. Alternatively, the metal nitride film may comprise the first and second electrodes.

摘要翻译： 本发明提供一种通过在基板上沉积金属氧化物膜并将金属氧化物膜暴露于硝化气体以致使金属氧化物致密并形成金属氮化物膜的方法来形成金属氮化物膜。 通过化学气相沉积前体的分解沉积金属氧化物膜。 硝化步骤包括将金属氧化物膜暴露于热或等离子体增强的硝化气体中，优选包括氮气，氧气和氧气。 本发明还提供了一种用于通过用沉积金属衬垫层的硝化气体致密化金属氧化物层而在衬底上形成金属氮化物层来形成用于金属化堆叠的衬里/势垒方案的方法。 可选地，金属衬垫层可以在金属氮化物层之前沉积在衬底上以形成金属/金属氮化物衬垫/屏障方案。 本发明的火焰提供了形成微电子器件的方法，包括形成第一电极，通过用硝化气体致密化金属氧化物层，在第一电极上形成金属氮化物层，形成金属氮化物层，在金属上沉积介电层 氮化物层，并且在电介质层上形成第二电极。 或者，金属氮化物膜可以包括第一和第二电极。