公开(公告)号：US08063407B2

公开(公告)日：2011-11-22

申请号：US12756824

申请日：2010-04-08

申请人： Pun Jae Choi ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

发明人： Pun Jae Choi ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

IPC分类号： H01L33/62

CPC分类号： H01L33/382 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/00

摘要： There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.

摘要翻译： 提供一种发光装置，其能够使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，实现与小面积电极的均匀电流扩散，并且以低成本，高可靠性和高质量实现批量生产 。 根据本发明的一个方面的发光器件包括在其一个表面上包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光层叠体和导电性基板。 这里，发光器件包括将发光层压分离成多个发光区域的阻挡单元，第一电极结构和第二电极结构。 第一电极结构包括接合单元，接触孔和将接合单元连接到接触孔的接线单元。

公开(公告)号：US20100193828A1

公开(公告)日：2010-08-05

申请号：US12756824

申请日：2010-04-08

申请人： Pun Jae CHOI ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

发明人： Pun Jae CHOI ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

IPC分类号： H01L33/62

CPC分类号： H01L33/382 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/00

摘要： There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.

摘要翻译： 提供一种发光装置，其能够使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，实现与小面积电极的均匀电流扩散，并且以低成本，高可靠性和高质量实现批量生产 。 根据本发明的一个方面的发光器件包括在其一个表面上包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光层叠体和导电性基板。 这里，发光器件包括将发光层压分离成多个发光区域的阻挡单元，第一电极结构和第二电极结构。 第一电极结构包括接合单元，接触孔和将接合单元连接到接触孔的接线单元。

公开(公告)号：US20080237622A1

公开(公告)日：2008-10-02

申请号：US12071980

申请日：2008-02-28

申请人： Pun Jae Choi ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

发明人： Pun Jae Choi ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/00

摘要： There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.

摘要翻译： 提供一种发光装置，其能够使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，实现与小面积电极的均匀电流扩散，并且以低成本，高可靠性和高质量实现批量生产 。 根据本发明的一个方面的发光器件包括在其一个表面上包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光层叠体和导电性基板。 这里，发光器件包括将发光层压分离成多个发光区域的阻挡单元，第一电极结构和第二电极结构。 第一电极结构包括接合单元，接触孔和将接合单元连接到接触孔的接线单元。

公开(公告)号：US07786498B2

公开(公告)日：2010-08-31

申请号：US12071980

申请日：2008-02-28

申请人： Pun Jae Choi ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

发明人： Pun Jae Choi ,  Jin Hyun Lee ,  Si Hyuk Lee ,  Seon Young Myoung ,  Ki Yeol Park

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/62 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/00014 ,  H01L2924/00

摘要： There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.

摘要翻译： 提供一种发光装置，其能够使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，实现与小面积电极的均匀电流扩散，并且以低成本，高可靠性和高质量实现批量生产 。 根据本发明的一个方面的发光器件包括在其一个表面上包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光层叠体和导电性基板。 这里，发光器件包括将发光层压分离成多个发光区域的阻挡单元，第一电极结构和第二电极结构。 第一电极结构包括接合单元，接触孔和将接合单元连接到接触孔的接线单元。

公开(公告)号：US09018666B2

公开(公告)日：2015-04-28

申请号：US12728853

申请日：2010-03-22

申请人： Pun Jae Choi ,  Ki Yeol Park ,  Sang Bum Lee ,  Seon Young Myoung ,  Myong Soo Cho

发明人： Pun Jae Choi ,  Ki Yeol Park ,  Sang Bum Lee ,  Seon Young Myoung ,  Myong Soo Cho

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/20

CPC分类号： H01L33/382 ,  H01L33/20

摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.

摘要翻译： 提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。 根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。 第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。

公开(公告)号：US20100171140A1

公开(公告)日：2010-07-08

申请号：US12728853

申请日：2010-03-22

申请人： Pun Jae CHOI ,  Ki Yeol Park ,  Sang Bum Lee ,  Seon Young Myoung ,  Myong Soo Cho

发明人： Pun Jae CHOI ,  Ki Yeol Park ,  Sang Bum Lee ,  Seon Young Myoung ,  Myong Soo Cho

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L33/20

摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.

摘要翻译： 提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。 根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。 第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。

公开(公告)号：US20110297992A1

公开(公告)日：2011-12-08

申请号：US13213988

申请日：2011-08-19

申请人： Pun Jae CHOI ,  Ki Yeol Park ,  Sang Bum LEE ,  Seon Young MYOUNG ,  Myong Soo CHO

发明人： Pun Jae CHOI ,  Ki Yeol Park ,  Sang Bum LEE ,  Seon Young MYOUNG ,  Myong Soo CHO

IPC分类号： H01L33/60

CPC分类号： H01L33/382 ,  H01L33/20

摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.

摘要翻译： 提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。 根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。 第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。

公开(公告)号：US20080191215A1

公开(公告)日：2008-08-14

申请号：US12003886

申请日：2008-01-03

申请人： Pun Jae Choi ,  Ki Yeol Park ,  Sang Bum Lee ,  Seon Young Myoung ,  Myong Soo Cho

发明人： Pun Jae Choi ,  Ki Yeol Park ,  Sang Bum Lee ,  Seon Young Myoung ,  Myong Soo Cho

IPC分类号： H01L33/00

CPC分类号： H01L33/382 ,  H01L33/20

摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.

摘要翻译： 提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。 根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。 第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。

公开(公告)号：US08847266B2

公开(公告)日：2014-09-30

申请号：US12003886

申请日：2008-01-03

申请人： Pun Jae Choi ,  Ki Yeol Park ,  Sang Bum Lee ,  Seon Young Myoung ,  Myong Soo Cho

发明人： Pun Jae Choi ,  Ki Yeol Park ,  Sang Bum Lee ,  Seon Young Myoung ,  Myong Soo Cho

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/20

CPC分类号： H01L33/382 ,  H01L33/20

摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.

摘要翻译： 提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。 根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。 第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。

公开(公告)号：US08309970B2

公开(公告)日：2012-11-13

申请号：US12767324

申请日：2010-04-26

申请人： Myong Soo Cho ,  Ki Yeol Park ,  Sang Yeob Song ,  Si Hyuk Lee ,  Pun Jae Choi

发明人： Myong Soo Cho ,  Ki Yeol Park ,  Sang Yeob Song ,  Si Hyuk Lee ,  Pun Jae Choi

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/0079

摘要： A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.

摘要翻译： 一种制造垂直结构发光二极管装置的方法，所述方法包括：在基板上依次形成第一导电型III-V族化合物半导体层，有源层和第二导电型III-V族化合物半导体层 成长 将导电基板键合到第二导电型III-V族化合物半导体层; 从第一导电型III-V族化合物半导体层去除用于生长的衬底; 以及由于去除所述用于生长的衬底而在所述第一导电III-V族化合物半导体层的暴露部分上形成电极，其中所述接合导电衬底包括通过向接合界面施加微波而部分地加热金属接合层，同时带来 金属接合层与接合界面接触。