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    SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE USING THE SAME
    3.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE USING THE SAME 有权
    半导体发光器件，其制造方法和使用该半导体发光器件的半导体发光器件封装

    公开(公告)号：US20110241066A1

    公开(公告)日：2011-10-06

    申请号：US13163107

    申请日：2011-06-17

    申请人： Pun Jae CHOI ,  Jin Hyun Lee ,  Ki Yeol Park ,  Myong Soo Cho

    发明人： Pun Jae CHOI ,  Jin Hyun Lee ,  Ki Yeol Park ,  Myong Soo Cho

    IPC分类号： H01L33/36

    CPC分类号： H01L33/38 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/00

    摘要： There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

    摘要翻译： 提供了一种半导体发光器件及其制造方法，以及使用该半导体发光器件的半导体发光器件封装。 一种具有第一导电类型半导体层，有源层，第二导电类型半导体层，第二电极层和绝缘层，顺序层压的第一电极层和导电基板的半导体发光器件，其中第二电极层 在第二电极层和第二导电类型半导体层之间的界面处具有暴露区域，并且第一电极层包括电连接到第一导电类型半导体层的至少一个接触孔，与第二导电类型半导体层电绝缘 和有源层，并且从第一电极层的一个表面延伸到第一导电类型半导体层的至少一部分。

    SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE USING THE SAME
    5.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE USING THE SAME 有权
    半导体发光器件，其制造方法和使用该半导体发光器件的半导体发光器件封装

    公开(公告)号：US20100193829A1

    公开(公告)日：2010-08-05

    申请号：US12757557

    申请日：2010-04-09

    申请人： Pun Jae CHOI ,  Jin Hyun Lee ,  Ki Yeol Park ,  Myong Soo Cho

    发明人： Pun Jae CHOI ,  Jin Hyun Lee ,  Ki Yeol Park ,  Myong Soo Cho

    IPC分类号： H01L33/00

    CPC分类号： H01L33/38 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/46 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2924/00012 ,  H01L2924/00

    摘要： There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

    摘要翻译： 提供了一种半导体发光器件及其制造方法，以及使用该半导体发光器件的半导体发光器件封装。 一种具有第一导电类型半导体层，有源层，第二导电类型半导体层，第二电极层和绝缘层，顺序层压的第一电极层和导电基板的半导体发光器件，其中第二电极层 在第二电极层和第二导电类型半导体层之间的界面处具有暴露区域，并且第一电极层包括电连接到第一导电类型半导体层的至少一个接触孔，与第二导电类型半导体层电绝缘 和有源层，并且从第一电极层的一个表面延伸到第一导电类型半导体层的至少一部分。

    Light emitting device, method of manufacturing the same and monolithic light emitting diode array
    9.
    发明授权
    Light emitting device, method of manufacturing the same and monolithic light emitting diode array 有权
    发光器件及其制造方法和单片发光二极管阵列

    公开(公告)号：US07884377B2

    公开(公告)日：2011-02-08

    申请号：US12725970

    申请日：2010-03-17

    申请人： Grigory Onushkin ,  Jin Hyun Lee ,  Myong Soo Cho ,  Pun Jae Choi

    发明人： Grigory Onushkin ,  Jin Hyun Lee ,  Myong Soo Cho ,  Pun Jae Choi

    IPC分类号： H01L27/15 ,  H01L31/12 ,  H01L33/00

    CPC分类号： H01L27/156 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A light emitting device including: at least one light emitting stack including first and second conductivity type semiconductor layers and an active layer disposed there between, the light emitting stack having first and second surfaces and side surfaces interposed between the first and second surfaces; first and second contacts formed on the first and second surface of the light emitting stack, respectively; a first insulating layer formed on the second surface and the side surfaces of the light emitting stack; a conductive layer connected to the second contact and extended along one of the side surfaces of the light emitting stack to have an extension portion adjacent to the first surface; and a substrate structure formed to surround the side surfaces and the second surface of the light emitting stack.

    摘要翻译： 一种发光器件，包括：包括第一和第二导电类型半导体层的至少一个发光堆叠和设置在其间的有源层，所述发光叠层具有插入在所述第一表面和所述第二表面之间的第一表面和第二表面以及侧表面; 分别形成在发光堆叠的第一和第二表面上的第一和第二触点; 形成在所述发光叠层的所述第二表面和所述侧表面上的第一绝缘层; 导电层，其连接到所述第二接触件并沿所述发光叠层的一个侧表面延伸，以具有与所述第一表面相邻的延伸部分; 以及形成为围绕发光叠层的侧表面和第二表面的衬底结构。

    Light emitting device, method of manufacturing the same and monolithic light emitting diode array
    10.
    发明申请
    Light emitting device, method of manufacturing the same and monolithic light emitting diode array 有权
    发光器件及其制造方法和单片发光二极管阵列

    公开(公告)号：US20080230789A1

    公开(公告)日：2008-09-25

    申请号：US12071544

    申请日：2008-02-22

    申请人： Grigory Onushkin ,  Jin Hyun Lee ,  Myong Soo Cho ,  Pun Jae Choi

    发明人： Grigory Onushkin ,  Jin Hyun Lee ,  Myong Soo Cho ,  Pun Jae Choi

    IPC分类号： H01L33/00 ,  H01L21/02

    CPC分类号： H01L27/156 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A light emitting device including: at least one light emitting stack including first and second conductivity type semiconductor layers and an active layer disposed there between, the light emitting stack having first and second surfaces and side surfaces interposed between the first and second surfaces; first and second contacts formed on the first and second surface of the light emitting stack, respectively; a first insulating layer formed on the second surface and the side surfaces of the light emitting stack; a conductive layer connected to the second contact and extended along one of the side surfaces of the light emitting stack to have an extension portion adjacent to the first surface; and a substrate structure formed to surround the side surfaces and the second surface of the light emitting stack.

    摘要翻译： 一种发光器件，包括：包括第一和第二导电类型半导体层的至少一个发光堆叠和设置在其间的有源层，所述发光叠层具有插入在所述第一表面和所述第二表面之间的第一表面和第二表面以及侧表面; 分别形成在发光堆叠的第一和第二表面上的第一和第二触点; 形成在所述发光叠层的所述第二表面和所述侧表面上的第一绝缘层; 导电层，其连接到所述第二接触件并沿所述发光叠层的一个侧表面延伸，以具有与所述第一表面相邻的延伸部分; 以及形成为围绕发光叠层的侧表面和第二表面的衬底结构。