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公开(公告)号：US09018666B2
公开(公告)日：2015-04-28
申请号：US12728853
申请日：2010-03-22
申请人： Pun Jae Choi , Ki Yeol Park , Sang Bum Lee , Seon Young Myoung , Myong Soo Cho
发明人： Pun Jae Choi , Ki Yeol Park , Sang Bum Lee , Seon Young Myoung , Myong Soo Cho
CPC分类号： H01L33/382 , H01L33/20
摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.
摘要翻译： 提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。 根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。 第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。
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公开(公告)号：US20100171140A1
公开(公告)日：2010-07-08
申请号：US12728853
申请日：2010-03-22
申请人： Pun Jae CHOI , Ki Yeol Park , Sang Bum Lee , Seon Young Myoung , Myong Soo Cho
发明人： Pun Jae CHOI , Ki Yeol Park , Sang Bum Lee , Seon Young Myoung , Myong Soo Cho
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/20
摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.
摘要翻译： 提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。 根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。 第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。
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公开(公告)号：US20080191215A1
公开(公告)日：2008-08-14
申请号：US12003886
申请日：2008-01-03
申请人： Pun Jae Choi , Ki Yeol Park , Sang Bum Lee , Seon Young Myoung , Myong Soo Cho
发明人： Pun Jae Choi , Ki Yeol Park , Sang Bum Lee , Seon Young Myoung , Myong Soo Cho
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/20
摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.
摘要翻译： 提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。 根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。 第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。
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公开(公告)号：US08847266B2
公开(公告)日：2014-09-30
申请号：US12003886
申请日：2008-01-03
申请人： Pun Jae Choi , Ki Yeol Park , Sang Bum Lee , Seon Young Myoung , Myong Soo Cho
发明人： Pun Jae Choi , Ki Yeol Park , Sang Bum Lee , Seon Young Myoung , Myong Soo Cho
CPC分类号： H01L33/382 , H01L33/20
摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.
摘要翻译： 提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。 根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。 第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。
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公开(公告)号：US08309970B2
公开(公告)日：2012-11-13
申请号：US12767324
申请日：2010-04-26
申请人： Myong Soo Cho , Ki Yeol Park , Sang Yeob Song , Si Hyuk Lee , Pun Jae Choi
发明人： Myong Soo Cho , Ki Yeol Park , Sang Yeob Song , Si Hyuk Lee , Pun Jae Choi
CPC分类号： H01L33/0079
摘要： A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.
摘要翻译： 一种制造垂直结构发光二极管装置的方法，所述方法包括：在基板上依次形成第一导电型III-V族化合物半导体层，有源层和第二导电型III-V族化合物半导体层 成长 将导电基板键合到第二导电型III-V族化合物半导体层; 从第一导电型III-V族化合物半导体层去除用于生长的衬底; 以及由于去除所述用于生长的衬底而在所述第一导电III-V族化合物半导体层的暴露部分上形成电极，其中所述接合导电衬底包括通过向接合界面施加微波而部分地加热金属接合层，同时带来 金属接合层与接合界面接触。
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6.发明授权公开(公告)号：US08916402B2
公开(公告)日：2014-12-23
申请号：US13460486
申请日：2012-04-30
申请人： Myong Soo Cho , Ki Yeol Park , Pun Jae Choi
发明人： Myong Soo Cho , Ki Yeol Park , Pun Jae Choi
CPC分类号： H01L33/0079 , H01L33/38 , H01L33/405
摘要： The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same.
摘要翻译： 本发明提供了一种化合物半导体发光器件，其包括：Si-Al衬底; 形成在Si-Al衬底的顶表面和底表面上的保护层; 以及依次层叠在形成在Si-Al基板的上表面上的保护层上的p型半导体层，有源层和n型半导体层及其制造方法。
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公开(公告)号：US07795054B2
公开(公告)日：2010-09-14
申请号：US11987712
申请日：2007-12-04
申请人： Myong Soo Cho , Ki Yeol Park , Sang Yeob Song , Si Hyuk Lee , Pun Jae Choi
发明人： Myong Soo Cho , Ki Yeol Park , Sang Yeob Song , Si Hyuk Lee , Pun Jae Choi
CPC分类号： H01L33/0079
摘要： A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.
摘要翻译： 一种制造垂直结构发光二极管装置的方法，所述方法包括：在基板上依次形成第一导电型III-V族化合物半导体层，有源层和第二导电型III-V族化合物半导体层 成长 将导电基板键合到第二导电型III-V族化合物半导体层; 从第一导电型III-V族化合物半导体层去除用于生长的衬底; 以及由于去除所述用于生长的衬底而在所述第一导电III-V族化合物半导体层的暴露部分上形成电极，其中所述接合导电衬底包括通过向接合界面施加微波而部分地加热金属接合层，同时带来 金属接合层与接合界面接触。
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8.发明授权公开(公告)号：US08624276B2
公开(公告)日：2014-01-07
申请号：US13568553
申请日：2012-08-07
申请人： Pun Jae Choi , Jin Hyun Lee , Ki Yeol Park , Myong Soo Cho
发明人： Pun Jae Choi , Jin Hyun Lee , Ki Yeol Park , Myong Soo Cho
IPC分类号： H01L29/20
CPC分类号： H01L33/38 , H01L24/32 , H01L24/48 , H01L24/73 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2224/45099 , H01L2924/00012 , H01L2924/00
摘要： There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.
摘要翻译： 提供了一种半导体发光器件及其制造方法，以及使用该半导体发光器件的半导体发光器件封装。 一种具有第一导电类型半导体层，有源层，第二导电类型半导体层，第二电极层和绝缘层，顺序层压的第一电极层和导电基板的半导体发光器件，其中第二电极层 在第二电极层和第二导电类型半导体层之间的界面处具有暴露区域，并且第一电极层包括电连接到第一导电类型半导体层的至少一个接触孔，与第二导电类型半导体层电绝缘 和有源层，并且从第一电极层的一个表面延伸到第一导电类型半导体层的至少一部分。
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9.发明申请SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE USING THE SAME 有权半导体发光器件，其制造方法和使用该半导体发光器件的半导体发光器件封装公开(公告)号：US20120299042A1
公开(公告)日：2012-11-29
申请号：US13568553
申请日：2012-08-07
申请人： Pun Jae Choi , Jin Hyun Lee , Ki Yeol Park , Myong Soo Cho
发明人： Pun Jae Choi , Jin Hyun Lee , Ki Yeol Park , Myong Soo Cho
CPC分类号： H01L33/38 , H01L24/32 , H01L24/48 , H01L24/73 , H01L33/20 , H01L33/22 , H01L33/382 , H01L33/405 , H01L33/46 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/00014 , H01L2224/45099 , H01L2924/00012 , H01L2924/00
摘要： There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.
摘要翻译： 提供了一种半导体发光器件及其制造方法，以及使用该半导体发光器件的半导体发光器件封装。 一种具有第一导电类型半导体层，有源层，第二导电类型半导体层，第二电极层和绝缘层，顺序层压的第一电极层和导电基板的半导体发光器件，其中第二电极层 在第二电极层和第二导电类型半导体层之间的界面处具有暴露区域，并且第一电极层包括电连接到第一导电类型半导体层的至少一个接触孔，与第二导电类型半导体层电绝缘 和有源层，并且从第一电极层的一个表面延伸到第一导电类型半导体层的至少一部分。
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10.发明授权公开(公告)号：US08188496B2
公开(公告)日：2012-05-29
申请号：US12418149
申请日：2009-04-03
申请人： Myong Soo Cho , Ki Yeol Park , Pun Jae Choi
发明人： Myong Soo Cho , Ki Yeol Park , Pun Jae Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/38 , H01L33/405
摘要： The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same.
摘要翻译： 本发明提供了一种化合物半导体发光器件，其包括：Si-Al衬底; 形成在Si-Al衬底的顶表面和底表面上的保护层; 以及依次层叠在形成在Si-Al基板的上表面上的保护层上的p型半导体层，有源层和n型半导体层及其制造方法。
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