公开(公告)号：US20140132315A1

公开(公告)日：2014-05-15

申请号：US13677800

申请日：2012-11-15

申请人： Puneet Sharma ,  Matthew A. Thompson ,  Willard E. Conley

发明人： Puneet Sharma ,  Matthew A. Thompson ,  Willard E. Conley

IPC分类号： H03L7/00

CPC分类号： G01R31/3016 ,  G01R31/2884

摘要： An integrated circuit including a degradation monitoring circuit. The degradation monitoring circuit includes a comparison circuit having a delay element including an input coupled to a data node of a timing path and having an output to provide a delayed signal of a data signal of the data node. The comparison circuit includes a logic comparator that provides a logic comparison between a data signal of the data node and the output of the delay element. The monitoring circuit includes a sampling circuit that provides a sampled signal of the output of the logic comparator that is a sampled with respect to a clock signal of the clock signal line. The monitoring circuit includes a hold circuit that provides a signal indicative of a data signal of the data node transitioning within a predetermined time of an edge transition of a clock signal of the clock signal line.

摘要翻译： 一种包括劣化监测电路的集成电路。 劣化监视电路包括具有延迟元件的比较电路，该延迟元件包括耦合到定时路径的数据节点的输入，并具有输出以提供数据节点的数据信号的延迟信号。 比较电路包括逻辑比较器，其提供数据节点的数据信号和延迟元件的输出之间的逻辑比较。 监视电路包括采样电路，该采样电路提供对于时钟信号线的时钟信号采样的逻辑比较器的输出的采样信号。 监视电路包括保持电路，该保持电路提供指示在时钟信号线的时钟信号的边沿转换的预定时间内数据节点的数据信号的信号。

公开(公告)号：US20100009131A1

公开(公告)日：2010-01-14

申请号：US12169888

申请日：2008-07-09

申请人： Veeraraghavan S. Basker ,  Willard E. Conley ,  Steven J. Holmes ,  David V. Horak

发明人： Veeraraghavan S. Basker ,  Willard E. Conley ,  Steven J. Holmes ,  David V. Horak

IPC分类号： G03F7/20 ,  B32B9/00

CPC分类号： G03F7/20 ,  G03F7/70466 ,  G03F7/70958 ,  H01L21/76816 ,  H01L21/76838 ,  Y10T428/24802

摘要： A first photoresist is applied over an optically dense layer and lithographically patterned to form an array of first photoresist portions having a pitch near twice a minimum feature size. The pattern in the first photoresist portions, or a first pattern, is transferred into the ARC layer and partly into the optically dense layer. A second photoresist is applied and patterned into another array having a pitch near twice the minimum feature size and interlaced with the first pattern. The pattern in the second photoresist, or a second pattern, is transferred through the ARC portions and partly into the optically dense layer. The ARC portions are patterned with a composite pattern including the first pattern and the second pattern. The composite pattern is transferred through the optically dense layer and into the underlayer to form a sublithographic pattern in the underlayer.

摘要翻译： 将第一光致抗蚀剂施加在光致密层上并且被光刻图案化以形成具有接近两倍最小特征尺寸的间距的第一光致抗蚀剂部分的阵列。 第一光致抗蚀剂部分或第一图案中的图案被转移到ARC层中并部分地转移到光致密层中。 施加第二光致抗蚀剂并将其图案化成具有接近最小特​​征尺寸的两倍的间距的另一阵列并与第一图案隔行扫描。 第二光致抗蚀剂或第二图案中的图案通过ARC部分转移并部分地转移到光致密层中。 ARC部分用包括第一图案和第二图案的复合图案图案化。 复合图案通过光致密层转移到底层中以在底层中形成亚光刻图案。

公开(公告)号：US5296332A

公开(公告)日：1994-03-22

申请号：US796155

申请日：1991-11-22

申请人： Harbans S. Sachdev ,  Willard E. Conley ,  Premlatha Jagannathan ,  Ahmad D. Katnani ,  Ranee W. Kwong ,  Leo L. Linehan ,  Steve S. Muira ,  Randolph J. Smith

发明人： Harbans S. Sachdev ,  Willard E. Conley ,  Premlatha Jagannathan ,  Ahmad D. Katnani ,  Ranee W. Kwong ,  Leo L. Linehan ,  Steve S. Muira ,  Randolph J. Smith

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/075 ,  H01L21/027 ,  H01L21/30 ,  G03C5/56 ,  G03C1/73 ,  G03C1/76

CPC分类号： G03F7/0757 ,  G03F7/0045 ,  G03F7/038

摘要： High sensitivity, high contrast, heat-stable resist compositions for use in deep UV, i-line e-beam and x-ray lithography. These compositions comprise a film-forming polymer having aromatic rings activated for electrophilic substitution, an acid catalyzable crosslinking agent which forms a hydroxy-stabilized carbonium ion, and a photoacid generator. The compositions are aqueous base developable.

摘要翻译： 用于深UV，i线电子束和x射线光刻的高灵敏度，高对比度，热稳定抗蚀剂组合物。 这些组合物包括具有用于亲电取代活化的芳环的成膜聚合物，形成羟基稳定的碳鎓离子的酸催化交联剂和光酸产生剂。 组合物是可显影的水性基质。

公开(公告)号：US08507187B2

公开(公告)日：2013-08-13

申请号：US12169888

申请日：2008-07-09

申请人： Veeraraghavan S. Basker ,  Willard E. Conley ,  Steven J. Holmes ,  David V. Horak

发明人： Veeraraghavan S. Basker ,  Willard E. Conley ,  Steven J. Holmes ,  David V. Horak

IPC分类号： G03F7/20

CPC分类号： G03F7/20 ,  G03F7/70466 ,  G03F7/70958 ,  H01L21/76816 ,  H01L21/76838 ,  Y10T428/24802

摘要： A first photoresist is applied over an optically dense layer and lithographically patterned to form an array of first photoresist portions having a pitch near twice a minimum feature size. The pattern in the first photoresist portions, or a first pattern, is transferred into the ARC layer and partly into the optically dense layer. A second photoresist is applied and patterned into another array having a pitch near twice the minimum feature size and interlaced with the first pattern. The pattern in the second photoresist, or a second pattern, is transferred through the ARC portions and partly into the optically dense layer. The ARC portions are patterned with a composite pattern including the first pattern and the second pattern. The composite pattern is transferred through the optically dense layer and into the underlayer to form a sublithographic pattern in the underlayer.

摘要翻译： 将第一光致抗蚀剂施加在光致密层上并且被光刻图案化以形成具有接近两倍最小特征尺寸的间距的第一光致抗蚀剂部分的阵列。 第一光致抗蚀剂部分或第一图案中的图案被转移到ARC层中并部分地转移到光致密层中。 施加第二光致抗蚀剂并将其图案化成具有接近最小特​​征尺寸的两倍的间距的另一阵列并与第一图案隔行扫描。 第二光致抗蚀剂或第二图案中的图案通过ARC部分转移并部分地转移到光致密层中。 ARC部分用包括第一图案和第二图案的复合图案图案化。 复合图案通过光致密层转移到底层中以在底层中形成亚光刻图案。

公开(公告)号：US20100028801A1

公开(公告)日：2010-02-04

申请号：US12184438

申请日：2008-08-01

申请人： Steven J. Holmes ,  Xuefeng Hua ,  Willard E. Conley

发明人： Steven J. Holmes ,  Xuefeng Hua ,  Willard E. Conley

IPC分类号： G03F7/20

CPC分类号： H01L21/0337 ,  H01L21/0338

摘要： In one embodiment, a photoresist is lithographically patterned to form an array of patterned photoresist portions having a pitch near twice a minimum feature size. Fluorine-containing polymer spacers are formed on sidewalls of the patterned photoresist portions. The pattern of the fluorine-containing polymer spacers is transferred into an underlying layer to form a pattern having a sublithographic pitch. In another embodiment, a first pattern in a first photoresist is transferred into a first ARC layer underneath to form first ARC portions. A planarizing second optically dense layer, a second ARC layer, and a second photoresist are applied over the first ARC portions. A second pattern in the second photoresist is transferred into the second ARC layer to form second ARC portions. The combination of the first ARC portions and second ARC portions function as an etch mask to pattern an underlying layer with a composite pattern having a sublithographic pitch.

摘要翻译： 在一个实施例中，光刻胶被图案化以形成具有接近两倍最小特征尺寸的间距的图案化光刻胶部分的阵列。 含氟聚合物间隔物形成在图案化的光致抗蚀剂部分的侧壁上。 将含氟聚合物间隔物的图案转移到下层中以形成具有亚光刻间距的图案。 在另一个实施例中，将第一光致抗蚀剂中的第一图案转移到下面的第一ARC层中以形成第一ARC部分。 在第一ARC部分上施加平坦化的第二光致密层，第二ARC层和第二光致抗蚀剂。 将第二光致抗蚀剂中的第二图案转移到第二ARC层中以形成第二ARC部分。 第一ARC部分和第二ARC部分的组合用作蚀刻掩模，以用具有亚光刻间距的复合图案对下面的层进行图案化。

公开(公告)号：US06207353B1

公开(公告)日：2001-03-27

申请号：US08987808

申请日：1997-12-10

申请人： Michael D. Armacost ,  Willard E. Conley ,  Tina J. Cotler-Wagner ,  Ronald A. DellaGuardia ,  David M. Dobuzinsky ,  Michael L. Passow ,  William C. Wille

发明人： Michael D. Armacost ,  Willard E. Conley ,  Tina J. Cotler-Wagner ,  Ronald A. DellaGuardia ,  David M. Dobuzinsky ,  Michael L. Passow ,  William C. Wille

IPC分类号： G03F700

CPC分类号： H01L21/0274 ,  G03F7/039 ,  H01L21/31116 ,  H01L21/31144

摘要： A resist formulation minimizes blistering during reactive ion etching processes resulting in an increased amount of polymer by-product deposition. Such processes involve exciting a gaseous fluorocarbon etchant with sufficient energy to form a high-density plasma, and the use of an etchant having a carbon-to-fluorine ratio of at least 0.33. In addition to a conventional photoactive component, resists which minimize blistering under these conditions include a resin binder which is a terpolymer having: (a) units that contain acid-labile groups; (b) units that are free of reactive groups and hydroxyl groups; and (c) units that contribute to aqueous developability of the photoresist. After the photoresist is patterned on the silicon oxide layer and the high-density plasma is formed, the high-density plasma is introduced to the silicon oxide layer to etch at least one opening in the silicon oxide layer. Preferably, the terpolymer is made up of about 70% 4-hydroxystyrene, about 20% styrene, and about 10% t-butylacrylate.

摘要翻译： 抗蚀剂制剂使反应离子蚀刻过程中的起泡最小化，导致聚合物副产物沉积量增加。 这种方法包括以足够的能量激发气态碳氟化合物蚀刻剂以形成高密度等离子体，以及使用碳 - 氟比至少为0.33的蚀刻剂。 除了常规的光活性组分之外，在这些条件下使泡沫最小化的抗蚀剂包括具有以下三元共聚物的树脂粘合剂：（a）含有酸不稳定基团的单元; （b）不含反应性基团和羟基的单元; 和（c）有助于光致抗蚀剂的水性显影性的单元。 在氧化硅层上形成光致抗蚀剂并形成高密度等离子体之后，将高密度等离子体引入到氧化硅层中以蚀刻氧化硅层中的至少一个开口。 优选地，三元共聚物由约70％的4-羟基苯乙烯，约20％的苯乙烯和约10％的丙烯酸叔丁酯组成。

公开(公告)号：US4931379A

公开(公告)日：1990-06-05

申请号：US267738

申请日：1988-11-03

申请人： William R. Brunsvold ,  Willard E. Conley ,  Dale M. Crockatt ,  Nancy E. Iwamoto

发明人： William R. Brunsvold ,  Willard E. Conley ,  Dale M. Crockatt ,  Nancy E. Iwamoto

IPC分类号： G03F7/039

CPC分类号： G03F7/039

摘要： The present invention relates to increasing the autodecomposition temperature of particular resists. The resists are comprised of structures having recurrent acid labile groups which are typically pendant to the polymeric backbone. The autodecomposition temperature of a resist is increased by selecting substituent sidechains on the acid labile group which exhibit increased stability. Sidechain structures which provide increased autodecomposition stability include secondary structures capable of forming secondary carbonium ion intermediates and having an available proton adjacent to the carbonium ion formed during cleavage. Moieties which can be used as the secondary sidechain structures include secondary alkyl, including both cyclic and alicyclic alkyl, substituted deactivated secondary benzyl, and 1-(deactivated heterocyclic) secondary alkyl.

摘要翻译： 本发明涉及增加特定抗蚀剂的自分解温度。 抗蚀剂由具有反复酸性不稳定基团的结构组成，其典型地悬挂于聚合物主链。 通过选择显示出增加的稳定性的酸不稳定基团上的取代基侧链来增加抗蚀剂的自分解温度。 提供增加的自分解稳定性的侧链结构包括能够形成仲碳鎓离子中间体并且具有与裂解期间形成的碳鎓离子相邻的可用质子的二级结构。 可用作次级侧链结构的部分包括仲烷基，包括环状和脂环族烷基，取代的失活的仲苄基和1-（失活的杂环）仲烷基。

公开(公告)号：US08119334B2

公开(公告)日：2012-02-21

申请号：US12112058

申请日：2008-04-30

申请人： Willard E. Conley

发明人： Willard E. Conley

IPC分类号： G03F7/26

CPC分类号： H01L21/31144 ,  G03F7/091 ,  H01L21/76802

摘要： Negative photoresist over an insulating layer is exposed to radiation according to a pattern for an opening in the insulating layer for filling conductive material. A post of the negative photoresist is left over the location where the opening in the insulating layer is to be formed. A developable hard mask is formed over the post by a spin-on process so that the hard mask over the post is much thinner than directly over the insulating layer. An etch back is performed to remove the hard mask from over the post so that the post of negative photoresist is thus exposed. The post is removed to form an opening in the hard mask. An etch is performed to form the opening in the insulating layer aligned to the opening in the hard mask. The opening in the insulating layer is filled with the conductive material.

摘要翻译： 根据用于填充导电材料的绝缘层中的开口的图案将绝缘层上的负光致抗蚀剂暴露于辐射。 负光致抗蚀剂的柱留在要形成绝缘层中的开口的位置。 通过旋涂工艺在柱上形成可显影的硬掩模，使得柱上的硬掩模比直接在绝缘层上方薄得多。 执行回蚀以从柱上移除硬掩模，使得负光致抗蚀剂的柱由此暴露。 去除柱子以形成硬掩模中的开口。 执行蚀刻以在与硬掩模中的开口对准的绝缘层中形成开口。 绝缘层中的开口填充有导电材料。

公开(公告)号：US20090325106A1

公开(公告)日：2009-12-31

申请号：US12147889

申请日：2008-06-27

申请人： Willard E. Conley ,  Terry G. Sparks ,  William J. Taylor, JR.

发明人： Willard E. Conley ,  Terry G. Sparks ,  William J. Taylor, JR.

IPC分类号： H01L21/02

CPC分类号： H01L21/0332 ,  H01L21/2652 ,  H01L29/78

摘要： A semiconductor fabrication method that includes forming a patterned mask (62, 72) by spin coating a developable hard mask layer (32) and a resist layer (42) over a semiconductor substrate (4). Subsequently, the resist layer (42) is exposed and developed to form a patterned resist layer (62), where the development step also removes the underlying hard mask layer (32), thereby forming a patterned mask (62, 72) which defines a void or printed feature to expose a region (97) over the semiconductor substrate which may be implanted, etched or otherwise processed.

摘要翻译： 一种半导体制造方法，包括通过在半导体衬底（4）上旋涂可显影硬掩模层（32）和抗蚀剂层（42）来形成图案化掩模（62,72）。 随后，曝光和显影抗蚀剂层（42）以形成图案化的抗蚀剂层（62），其中显影步骤还去除下面的硬掩模层（32），由此形成图案化掩模（62,72），其限定了 空隙或印刷特征以暴露可以被植入，蚀刻或以其他方式处理的半导体衬底上的区域（97）。

公开(公告)号：US20090274982A1

公开(公告)日：2009-11-05

申请号：US12112058

申请日：2008-04-30

申请人： Willard E. Conley

发明人： Willard E. Conley

IPC分类号： G03F7/26

CPC分类号： H01L21/31144 ,  G03F7/091 ,  H01L21/76802

摘要： Negative photoresist over an insulating layer is exposed to radiation according to a pattern for an opening in the insulating layer for filling conductive material. A post of the negative photoresist is left over the location where the opening in the insulating layer is to be formed. A developable hard mask is formed over the post by a spin-on process so that the hard mask over the post is much thinner than directly over the insulating layer. An etch back is performed to remove the hard mask from over the post so that the post of negative photoresist is thus exposed. The post is removed to form an opening in the hard mask. An etch is performed to form the opening in the insulating layer aligned to the opening in the hard mask. The opening in the insulating layer is filled with the conductive material.

摘要翻译： 根据用于填充导电材料的绝缘层中的开口的图案将绝缘层上的负光致抗蚀剂暴露于辐射。 负光致抗蚀剂的柱留在要形成绝缘层中的开口的位置。 通过旋涂工艺在柱上形成可显影的硬掩模，使得柱上的硬掩模比直接在绝缘层上方薄得多。 执行回蚀以从柱上移除硬掩模，使得负光致抗蚀剂的柱由此暴露。 去除柱子以形成硬掩模中的开口。 执行蚀刻以在与硬掩模中的开口对准的绝缘层中形成开口。 绝缘层中的开口填充有导电材料。