PROBES FORMED FROM SEMICONDUCTOR REGION VIAS
    9.
    发明申请
    PROBES FORMED FROM SEMICONDUCTOR REGION VIAS 有权
    从半导体地区VIAS成立的研究

    公开(公告)号:US20120038379A1

    公开(公告)日:2012-02-16

    申请号:US12854697

    申请日:2010-08-11

    IPC分类号: G01R31/20

    摘要: Embodiments of the invention describe forming a set of probes using semiconductor regions each including a plurality of vias. A first set of probe segments may be formed from a first set of vias on a first semiconductor region. A second set of probe segments may be formed from a second set of vias on a second semiconductor region and bonded to the first set of probe segments. At least one spring comprising a dielectric material may be formed to couple the first set of probe segments, while a set of metal tips disposed on the second set of probe segments.

    摘要翻译: 本发明的实施例描述了使用包括多个通孔的半导体区形成一组探针。 第一组探针段可以由第一半导体区上的第一组通孔形成。 第二组探针段可以由第二半导体区上的第二组通孔形成并结合到第一组探针段上。 包括电介质材料的至少一个弹簧可以形成为耦合第一组探针段,而一组设置在第二组探针段上的金属尖端。