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    Inductive inertial sensor architecture and fabrication in packaging build-up layers
    6.
    发明授权
    Inductive inertial sensor architecture and fabrication in packaging build-up layers 有权
    感应惯性传感器结构和制造在包装堆积层

    公开(公告)号：US09429427B2

    公开(公告)日：2016-08-30

    申请号：US13720876

    申请日：2012-12-19

    申请人： Qing Ma ,  Feras Eid ,  Kevin Lin ,  Johanna M. Swan ,  Weng Hong Teh ,  Valluri R. Rao

    发明人： Qing Ma ,  Feras Eid ,  Kevin Lin ,  Johanna M. Swan ,  Weng Hong Teh ,  Valluri R. Rao

    IPC分类号： G01C19/00 ,  G01C19/56 ,  G01C19/5776

    CPC分类号： G01C19/56 ,  G01C19/5776

    摘要： This invention relates to inductive inertial sensors employing a magnetic drive and/or sense architecture. In embodiments, translational gyroscopes utilize a conductive coil made to vibrate in a first dimension as a function of a time varying current driven through the coil in the presence of a magnetic field. Sense coils register an inductance that varies as a function of an angular velocity in a second dimension. In embodiments, the vibrating coil causes first and second mutual inductances in the sense coils to deviate from each other as a function of the angular velocity. In embodiments, self-inductances associated with a pair of meandering coils vary as a function of an angular velocity in a second dimension. In embodiments, package build-up layers are utilized to fabricate the inductive inertial sensors, enabling package-level integrated inertial sensing advantageous in small form factor computing platforms, such as mobile devices.

    摘要翻译： 本发明涉及采用磁驱动和/或感测架构的感应惯性传感器。 在实施例中，平移陀螺仪利用在第一维度中制成的导电线圈作为在存在磁场的情况下驱动通过线圈的时变电流的函数。 感应线圈记录在第二维度上作为角速度的函数变化的电感。 在实施例中，振动线圈使得感测线圈中的第一和第二互感器作为角速度的函数彼此偏离。 在实施例中，与一对曲折线圈相关联的自感量作为第二维度中的角速度的函数而变化。 在实施例中，使用封装积层来制造感应惯性传感器，使得能够在诸如移动设备的小尺寸计算平台中有利的封装级集成惯性感测。

    METHOD OF FORMING A MAGNETIC MEMS TUNABLE CAPACITOR
    7.
    发明申请
    METHOD OF FORMING A MAGNETIC MEMS TUNABLE CAPACITOR 审中-公开
    形成磁电MEMS电容器的方法

    公开(公告)号：US20150002984A1

    公开(公告)日：2015-01-01

    申请号：US13931632

    申请日：2013-06-28

    申请人： Weng Hong TEH ,  Qing Ma ,  Johanna M. Swan ,  Valluri R. Rao

    发明人： Weng Hong TEH ,  Qing Ma ,  Johanna M. Swan ,  Valluri R. Rao

    IPC分类号： H01L25/16 ,  H01G7/00 ,  H01L43/02 ,  H01L49/02 ,  H01L43/12

    CPC分类号： H01L25/16 ,  B81B3/0056 ,  B81B2201/0221 ,  H01G5/16 ,  H01G7/00 ,  H01L24/24 ,  H01L2224/04105 ,  H01L2224/24195 ,  H01L2224/32245 ,  H01L2224/73267 ,  H01L2924/12042 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/00

    摘要： An apparatus including a die; a carrier coupled to the die; and at least one capacitor positioned in or on the carrier, the at least one capacitor including a first electrode, a second electrode and a dielectric material; and a magnet positioned such that a magnetic field at least partially actuates the second electrode toward the first electrode. A method including disposing a die, a first electrode of a capacitor and a magnet on a sacrificial substrate; forming a dielectric layer on the first electrode; patterning a conductive material coupled to the first electrode; patterning a second electrode on the dielectric layer; and removing the sacrificial substrate. A method including exposing a suspended first electrode of a capacitor in a package to a magnetic field; driving a current in a first direction through the first electrode; and establishing a voltage difference between the first electrode and a second electrode.

    摘要翻译： 一种包括模具的设备; 耦合到管芯的载体; 以及位于所述载体中或载体上的至少一个电容器，所述至少一个电容器包括第一电极，第二电极和电介质材料; 以及定位成使得磁场至少部分地致动第二电极朝向第一电极的磁体。 一种方法，包括在牺牲基板上设置管芯，电容器的第一电极和磁体; 在所述第一电极上形成介电层; 图案化耦合到所述第一电极的导电材料; 在所述电介质层上构图第二电极; 并去除牺牲衬底。 一种包括将封装中的电容器的悬置的第一电极暴露于磁场的方法; 沿第一方向驱动电流通过第一电极; 以及在所述第一电极和第二电极之间建立电压差。

    Using controlled bias voltage for data retention enhancement in a ferroelectric media
    9.
    发明授权
    Using controlled bias voltage for data retention enhancement in a ferroelectric media 有权
    使用受控偏置电压在铁电介质中进行数据保留增强

    公开(公告)号：US07782649B2

    公开(公告)日：2010-08-24

    申请号：US11961973

    申请日：2007-12-20

    申请人： Quan Anh Tran ,  Valluri R. Rao ,  Qing Ma

    发明人： Quan Anh Tran ,  Valluri R. Rao ,  Qing Ma

    IPC分类号： G11C11/22

    CPC分类号： G11B9/02

    摘要： Using controlled bias voltage for data retention enhancement in a ferroelectric media is generally described. In one example, an apparatus includes a ferroelectric film including one or more domains, the ferroelectric film having a first surface and a second surface, the first surface being opposite the second surface, an electrode coupled with the first surface, and an electrically conductive thin film coupled with the second surface wherein the electrically conductive thin film is sufficiently conductive that a controlled bias field applied between the electrically conductive thin film and the electrode is sufficient to grow, shrink, or actively maintain the size of the one or more domains disposed between the electrically conductive thin film and the electrode.

    摘要翻译： 一般来说，在铁电介质中使用受控偏置电压用于数据保持增强。 在一个示例中，一种装置包括具有一个或多个畴的铁电体膜，所述铁电膜具有第一表面和第二表面，所述第一表面与所述第二表面相对，与所述第一表面耦合的电极和导电薄膜 与第二表面耦合的膜，其中导电薄膜具有足够的导电性，使得施加在导电薄膜和电极之间的受控偏压场足以生长，收缩或主动地保持设置在导电薄膜和电极之间的一个或多个畴的尺寸 导电薄膜和电极。

    METHODS FOR FERROELECTRIC DOMAIN READING
    10.
    发明申请
    METHODS FOR FERROELECTRIC DOMAIN READING 有权
    用于电磁域读取的方法

    公开(公告)号：US20090003030A1

    公开(公告)日：2009-01-01

    申请号：US11772194

    申请日：2007-06-30

    申请人： Qing Ma ,  Valluri R. Rao ,  Li-Peng Wang ,  Nathan Franklin

    发明人： Qing Ma ,  Valluri R. Rao ,  Li-Peng Wang ,  Nathan Franklin

    IPC分类号： G11C11/22 ,  G11C11/34

    CPC分类号： G11C11/22

    摘要： Methods and arrangements for data storage are discussed. Embodiments include applying a first voltage between a tip and an electrode, thereby forming a polarized domain in a ferroelectric material between 1 nanometer (nm) and 50 nm in thickness. The embodiments may also include applying another voltage through the tip, thereby generating a current responsive to an orientation of the polarized domain. The embodiments may also include measuring the current and determining the orientation of the polarized domain, based upon the measuring.

    摘要翻译： 讨论了数据存储的方法和布置。 实施例包括在尖端和电极之间施加第一电压，从而在厚度在1nm（nm）到50nm之间的铁电材料中形成极化畴。 实施例还可以包括通过尖端施加另一电压，从而产生响应于偏振域的取向的电流。 实施例还可以包括基于测量来测量电流并确定极化畴的取向。