SPRAY DEPOSITION MODULE FOR AN IN-LINE PROCESSING SYSTEM
    8.
    发明申请
    SPRAY DEPOSITION MODULE FOR AN IN-LINE PROCESSING SYSTEM 审中-公开
    用于在线处理系统的喷雾沉积模块

    公开(公告)号:US20120064225A1

    公开(公告)日:2012-03-15

    申请号:US12880564

    申请日:2010-09-13

    CPC分类号: H01M4/0419 H01M10/0404

    摘要: In one embodiment, an apparatus for simultaneously depositing an anodically or cathodically active material on opposing sides of a flexible conductive substrate is provided. The apparatus comprises a chamber body defining one or more processing regions in which a flexible conductive substrate is exposed to a dual sided spray deposition process, wherein each of the one or more processing regions are further divided into a first spray deposition region and a second spray deposition region for simultaneously spraying an anodically active or cathodically active material onto opposing sides of a portion of the flexible conductive substrate, wherein each of the first and second spray deposition regions comprise a spray dispenser cartridge for delivering the activated material toward the flexible conductive substrate and a movable collection shutter.

    摘要翻译: 在一个实施例中,提供了用于在柔性导电基板的相对侧上同时沉积阳极或阴极活性材料的装置。 该装置包括限定一个或多个处理区域的室主体,其中柔性导电基板暴露于双面喷射沉积工艺,其中一个或多个处理区域中的每一个进一步分为第一喷涂区域和第二喷涂 沉积区域,用于同时将阳极活性或阴极活性材料喷射到柔性导电基底的一部分的相对侧上,其中第一和第二喷射沉积区域中的每一个包括喷射分配器筒,用于将活化材料递送到柔性导电基底, 一个可移动的集合挡板。

    APPARATUS AND METHOD FOR HVPE PROCESSING USING A PLASMA
    10.
    发明申请
    APPARATUS AND METHOD FOR HVPE PROCESSING USING A PLASMA 审中-公开
    使用等离子体进行HVPE加工的装置和方法

    公开(公告)号:US20130087093A1

    公开(公告)日:2013-04-11

    申请号:US13456547

    申请日:2012-04-26

    IPC分类号: C30B25/10 C30B25/02

    摘要: Embodiments of the present invention generally relate to a hydride vapor phase epitaxy (HVPE) apparatus that utilizes a high temperature gas distribution device and plasma generation to form an activated precursor gas used to rapidly form a high quality compound nitride layer on a surface of a substrate. In one embodiment, plasma is formed from a nitrogen containing precursor within a gas distribution device prior to injection into a processing region of the HVPE apparatus. In another embodiment, plasma is formed from a nitrogen containing precursor within the processing region by using the gas distribution device as an electrode for forming the plasma in the processing region. In each embodiment, a second precursor gas may be separately introduced into the processing region of the HVPE apparatus through the gas distribution device without mixing with the nitrogen containing precursor prior to entering the processing region.

    摘要翻译: 本发明的实施方案一般涉及使用高温气体分配装置和等离子体产生形成活化的前体气体的氢化物气相外延(HVPE)装置,其用于在衬底的表面上快速形成高质量的复合氮化物层 。 在一个实施例中,在注入HVPE装置的处理区域之前,在气体分配装置内由含氮前体形成等离子体。 在另一个实施方案中,通过使用气体分配装置作为在处理区域中形成等离子体的电极,在处理区域内由含氮前体形成等离子体。 在每个实施例中,第二前体气体可以在进入处理区域之前通过气体分配装置分别引入到HVPE设备的处理区域中,而不与含氮前体混合。