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    Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber
    2.
    发明申请
    Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber 审中-公开
    使用BTBAS双（叔丁基氨基硅烷）在单晶片室中的氮化硅的热化学气相沉积

    公开(公告)号：US20050109276A1

    公开(公告)日：2005-05-26

    申请号：US10911208

    申请日：2004-08-04

    申请人： R. Iyer ,  Sean Seutter ,  Jacob Smith ,  Gregory Dibello ,  Alexander Tam ,  Binh Tran ,  Sanjeev Tandon

    发明人： R. Iyer ,  Sean Seutter ,  Jacob Smith ,  Gregory Dibello ,  Alexander Tam ,  Binh Tran ,  Sanjeev Tandon

    IPC分类号： C23C16/00 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455

    CPC分类号： C23C16/4557 ,  C23C16/345 ,  C23C16/4412 ,  C23C16/45565

    摘要： A method and apparatus for a CVD chamber that provides uniform heat distribution, efficient precursor delivery, uniform distribution of process and inert chemicals, and thermal management of residues in the chamber and exhaust surfaces by changing the mechanical design of a single wafer thermal CVD chamber. The improvements include a processing chamber comprising a chamber body and a chamber lid defining a processing region, a substrate support disposed in the processing region, a gas delivery system mounted on the chamber lid, the gas delivery system comprising a lid, an adapter ring and two blocker plates that define a gas mixing region, and a face plate fastened to the adapter ring, a heating element positioned to heat the adapter ring to a desired temperature, and a temperature controlled exhaust system. The improvements also include a method for depositing a silicon nitride layer on a substrate, comprising vaporizing bis(tertiary-butylamino) silane, flowing the bis(tertiary-butylamino) silane into a processing chamber, flowing ammonia into a processing chamber, combining the two reactants in a mixer in the chamber lid, having an additional mixing region defined by an adapter ring and at least two blocker plates, heating the adapter ring, flowing the bis(tertiary-butylamino) silane through a gas distribution plate into a processing region above a substrate. The improvements reduce defects across the surface of the substrate and improve product yield.

    摘要翻译： 一种用于CVD室的方法和装置，其通过改变单个晶片热CVD室的机械设计来提供均匀的热分布，有效的前体输送，工艺和惰性化学品的均匀分布，以及腔室和排气表面中残留物的热管理。 该改进包括一个处理室，该处理室包括一个室主体和一个限定处理区域的室盖，设置在处理区域中的基板支撑件，安装在室盖上的气体输送系统，气体输送系统包括盖子，适配器环和 限定气体混合区域的两个阻挡板和紧固到接合环的面板，定位成将接合环加热到所需温度的加热元件和温度控制的排气系统。 该改进还包括在基底上沉积氮化硅层的方法，包括将双（叔丁基氨基）硅烷蒸发，将双（叔丁基氨基）硅烷流入处理室，将氨流入处理室，将两 在室盖中的混合器中的反应物，具有由适配环和至少两个阻挡板限定的附加混合区域，加热适配环，使双（叔丁基氨基）硅烷通过气体分布板流入上述加工区域 底物。 这些改进减少了衬底表面的缺陷并提高了产品的产率。

    Method and apparatus for the low temperature deposition of doped silicon nitride films
    3.
    发明申请
    Method and apparatus for the low temperature deposition of doped silicon nitride films 审中-公开
    掺杂氮化硅薄膜低温沉积的方法和装置

    公开(公告)号：US20070082507A1

    公开(公告)日：2007-04-12

    申请号：US11245373

    申请日：2005-10-06

    申请人： R. Iyer ,  Jacob Smith ,  Sean Seutter ,  Kangzhan Zhang ,  Alexander Tam ,  Kevin Cunningham ,  Phani Ramachandran

    发明人： R. Iyer ,  Jacob Smith ,  Sean Seutter ,  Kangzhan Zhang ,  Alexander Tam ,  Kevin Cunningham ,  Phani Ramachandran

    IPC分类号： H01L21/00

    CPC分类号： C23C16/45565 ,  C23C16/345 ,  C23C16/4412 ,  C23C16/4557

    摘要： A method and apparatus for low temperature deposition of doped silicon nitride films is disclosed. The improvements include a mechanical design for a CVD chamber that provides uniform heat distribution for low temperature processing and uniform distribution of process chemicals, and methods for depositing at least one layer comprising silicon and nitrogen on a substrate by heating a substrate, flowing a silicon containing precursor into a processing chamber having a mixing region defined by an adaptor ring and one or more blocker plates and an exhaust system heating the adapter ring and a portion of the exhaust system, flowing one or more of a hydrogen, germanium, boron, or carbon containing precursor into the processing chamber, and optionally flowing a nitrogen containing precursor into the processing chamber.

    摘要翻译： 公开了一种用于低温沉积掺杂氮化硅膜的方法和装置。 这些改进包括用于CVD室的机械设计，其提供用于低温处理的均匀热分布和工艺化学品的均匀分布，以及用于通过加热衬底在衬底上沉积包含硅和氮的至少一层的方法，使含硅 前体进入具有由适配环和一个或多个阻断板限定的混合区域的处理室，以及加热接合环和排气系统的一部分，排出氢，锗，硼或碳的一部分的排气系统 并且可选地将含氮前体流入处理室。

    Multi-zone resistive heater
    4.
    发明申请
    Multi-zone resistive heater 审中-公开
    多区电阻加热器

    公开(公告)号：US20070125762A1

    公开(公告)日：2007-06-07

    申请号：US11293626

    申请日：2005-12-01

    申请人： Anqing Cui ,  Binh Tran ,  Alexander Tam ,  Jacob Smith ,  R. Iyer ,  Joseph Yudovsky ,  Sean Seutter

    发明人： Anqing Cui ,  Binh Tran ,  Alexander Tam ,  Jacob Smith ,  R. Iyer ,  Joseph Yudovsky ,  Sean Seutter

    IPC分类号： H05B3/68

    CPC分类号： H01L21/67103

    摘要： Apparatus, reactors, and methods for heating substrates are disclosed. The apparatus comprises a stage comprising a body and a surface having an area to support a substrate, a shaft coupled to the stage, a first heating element disposed within a central region of the body of the stage, and at least second and third heating elements disposed within the body of the stage, the at least second and third heating elements each partially surrounding the first heating element and wherein the at least second and third heating elements are circumferentially adjacent to each other.

    摘要翻译： 公开了用于加热基底的装置，反应器和方法。 该装置包括一个舞台，包括主体和具有支撑衬底的区域的表面，耦合到舞台的轴，设置在舞台的身体的中心区域内的第一加热元件，以及至少第二和第三加热元件 设置在所述台体内，所述至少第二和第三加热元件各自部分地围绕所述第一加热元件，并且其中所述至少第二和第三加热元件彼此周向相邻。

    Apparatus and method for the deposition of silicon nitride films
    5.
    发明申请
    Apparatus and method for the deposition of silicon nitride films 审中-公开
    用于沉积氮化硅膜的装置和方法

    公开(公告)号：US20060102076A1

    公开(公告)日：2006-05-18

    申请号：US11245758

    申请日：2005-10-07

    申请人： Jacob Smith ,  Sean Seutter ,  R. Iyer ,  Binh Tran ,  Alexander Tam ,  James Wilson

    发明人： Jacob Smith ,  Sean Seutter ,  R. Iyer ,  Binh Tran ,  Alexander Tam ,  James Wilson

    IPC分类号： C23C16/00

    CPC分类号： C23C16/4557 ,  C23C16/345 ,  C23C16/4412 ,  C23C16/45565

    摘要： A method and apparatus for a chemical vapor deposition (CVD) chamber provides uniform heat distribution, uniform distribution of process chemicals in the CVD chamber, and minimization of by-product and condensate residue in the chamber. The improvements include a processing chamber comprising a chamber body, a base, and a chamber lid defining a processing region, a substrate support disposed in the processing region, a gas delivery system mounted on a chamber lid, the gas delivery system comprising an adapter ring and two blocker plates that define a gas mixing region, and a face plate fastened to the adapter ring, an exhaust system mounted at the base, a heating element positioned to heat the adapter ring; and a heating element positioned to heat a portion of the exhaust system.

    摘要翻译： 用于化学气相沉积（CVD）室的方法和装置提供均匀的热分布，CVD室中的工艺化学品的均匀分布，以及室中的副产物和冷凝物残留物的最小化。 该改进包括一个处理室，它包括一个室主体，一个基座和一个限定一个处理区域的室盖，一个位于处理区域中的基板支架，一个安装在室盖上的气体输送系统，该气体输送系统包括一个适配环 以及限定气体混合区域的两个阻挡板，以及紧固到所述适配环的面板，安装在所述基座处的排气系统，定位成加热所述适配环的加热元件; 以及加热元件，其定位成加热排气系统的一部分。

    Method for fabricating controlled stress silicon nitride films
    7.
    发明申请
    Method for fabricating controlled stress silicon nitride films 失效
    控制应力氮化硅薄膜的制造方法

    公开(公告)号：US20070111546A1

    公开(公告)日：2007-05-17

    申请号：US11273381

    申请日：2005-11-12

    申请人： R. Iyer ,  Sanjeev Tandon ,  Jacob Smith

    发明人： R. Iyer ,  Sanjeev Tandon ,  Jacob Smith

    IPC分类号： H01L21/31

    CPC分类号： H01L21/0217 ,  C23C16/345 ,  H01L21/0214 ,  H01L21/02167 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/3081 ,  H01L21/3185

    摘要： A method for fabricating a multiple layer silicon nitride film on a semiconductor substrate is provided herein. In one embodiment, a method for fabricating a multiple layer silicon nitride film on a semiconductor substrate includes providing a substrate over which the multiple layer silicon nitride film is to be formed; and forming the multiple layer silicon nitride film in a single processing reactor by: (a) depositing a base layer comprising silicon nitride on the base structure; (b) depositing a middle layer comprising a stress-controlling material on the base layer; and (c) depositing a top layer comprising silicon nitride on the middle layer. The stress-controlling material selectively increases or reduces the stress of the multiple layer silicon nitride film as compared to silicon nitride alone.

    摘要翻译： 本发明提供一种在半导体衬底上制造多层氮化硅膜的方法。 在一个实施例中，在半导体衬底上制造多层氮化硅膜的方法包括提供要在其上形成多层氮化硅膜的衬底; 以及通过以下步骤在单个处理反应器中形成所述多层氮化硅膜：（a）在所述基底结构上沉积包括氮化硅的基底层; （b）在所述基底层上沉积包含应力控制材料的中间层; 和（c）在中间层上沉积包含氮化硅的顶层。 与单独的氮化硅相比，应力控制材料选择性地增加或减小了多层氮化硅膜的应力。

    Method for silicon based dielectric deposition and clean with photoexcitation
    8.
    发明申请
    Method for silicon based dielectric deposition and clean with photoexcitation 审中-公开
    硅基电介质沉积和光激发清洗方法

    公开(公告)号：US20060286819A1

    公开(公告)日：2006-12-21

    申请号：US11157533

    申请日：2005-06-21

    申请人： Sean Seutter ,  Kaushal Singh ,  Jacob Smith ,  R. Iyer ,  Steve Ghanayem ,  Adam Brailove ,  Robert Shydo ,  Jeannot Morin

    发明人： Sean Seutter ,  Kaushal Singh ,  Jacob Smith ,  R. Iyer ,  Steve Ghanayem ,  Adam Brailove ,  Robert Shydo ,  Jeannot Morin

    IPC分类号： H01L21/31

    CPC分类号： H01L21/0217 ,  C23C16/02 ,  C23C16/345 ,  C23C16/482 ,  C23C16/56 ,  H01L21/0228 ,  H01L21/3185

    摘要： Embodiments of the invention generally provide a method for depositing films using photoexcitation. The photoexcitation may be utilized for at least one of treating the substrate prior to deposition, treating substrate and/or gases during deposition, treating a deposited film, or for enhancing chamber cleaning. In one embodiment, a method for depositing silicon and nitrogen-containing film on a substrate includes heating a substrate disposed in a processing chamber, generating a beam of energy of between about 1 to about 10 eV, transferring the energy to a surface of the substrate; flowing a nitrogen-containing chemical into the processing chamber, flowing a silicon-containing chemical with silicon-nitrogen bonds into the processing chamber, and depositing a silicon and nitrogen-containing film on the substrate.

    摘要翻译： 本发明的实施方案通常提供使用光激发沉积膜的方法。 光致激发可以用于在沉积之前处理衬底，在沉积期间处理衬底和/或气体，处理沉积膜或用于增强腔室清洁中的至少一种。 在一个实施例中，用于在衬底上沉积硅和含氮膜的方法包括加热设置在处理室中的衬底，产生约1至约10eV的能量束，将能量转移到衬底的表面 ; 使含氮化学物质流入处理室，使含有硅 - 氮的键的含硅化学物质流入处理室，并在衬底上沉积含硅和氮的膜。

    Rotating substrate support and methods of use
    9.
    发明申请
    Rotating substrate support and methods of use 审中-公开
    旋转基板支撑和使用方法

    公开(公告)号：US20060281310A1

    公开(公告)日：2006-12-14

    申请号：US11147938

    申请日：2005-06-08

    申请人： Jacob Smith ,  Alexander Tam ,  R. Iyer ,  Sean Seutter ,  Binh Tran ,  Nir Merry ,  Adam Brailove ,  Robert Shydo ,  Robert Andrews ,  Frank Roberts ,  Theodore Smick ,  Geoffrey Ryding

    发明人： Jacob Smith ,  Alexander Tam ,  R. Iyer ,  Sean Seutter ,  Binh Tran ,  Nir Merry ,  Adam Brailove ,  Robert Shydo ,  Robert Andrews ,  Frank Roberts ,  Theodore Smick ,  Geoffrey Ryding

    IPC分类号： H01L21/44 ,  C23C16/00

    CPC分类号： H01L21/68792 ,  C23C16/4584 ,  H01L21/67126 ,  H01L21/68742

    摘要： A method and apparatus for processing a substrate utilizing a rotating substrate support are disclosed herein. In one embodiment, an apparatus for processing a substrate includes a chamber having a substrate support assembly disposed within the chamber. The substrate support assembly includes a substrate support having a support surface and a heater disposed beneath the support surface. A shaft is coupled to the substrate support and a motor is coupled to the shaft through a rotor to provide rotary movement to the substrate support. A seal block is disposed around the rotor and forms a seal therewith. The seal block has at least one seal and at least one channel disposed along the interface between the seal block and the shaft. A port is coupled to each channel for connecting to a pump. A lift mechanism is coupled to the shaft for raising and lowering the substrate support.

    摘要翻译： 本文公开了一种利用旋转衬底支撑件来处理衬底的方法和装置。 在一个实施例中，用于处理衬底的装置包括具有设置在腔室内的衬底支撑组件的室。 衬底支撑组件包括具有支撑表面的衬底支撑件和设置在支撑表面下方的加热器。 轴联接到基板支撑件，并且电机通过转子联接到轴，以向基板支撑件提供旋转运动。 密封块设置在转子周围并与其形成密封。 密封块具有至少一个密封件和沿密封块和轴之间的界面设置的至少一个通道。 端口连接到每个通道以连接到泵。 升降机构联接到轴上以升高和降低基板支撑。