摘要:
A method and apparatus for a CVD chamber that provides uniform heat distribution, efficient precursor delivery, uniform distribution of process and inert chemicals, and thermal management of residues in the chamber and exhaust surfaces by changing the mechanical design of a single wafer thermal CVD chamber. The improvements include a processing chamber comprising a chamber body and a chamber lid defining a processing region, a substrate support disposed in the processing region, a gas delivery system mounted on the chamber lid, the gas delivery system comprising a lid, an adapter ring and two blocker plates that define a gas mixing region, and a face plate fastened to the adapter ring, a heating element positioned to heat the adapter ring to a desired temperature, and a temperature controlled exhaust system. The improvements also include a method for depositing a silicon nitride layer on a substrate, comprising vaporizing bis(tertiary-butylamino) silane, flowing the bis(tertiary-butylamino) silane into a processing chamber, flowing ammonia into a processing chamber, combining the two reactants in a mixer in the chamber lid, having an additional mixing region defined by an adapter ring and at least two blocker plates, heating the adapter ring, flowing the bis(tertiary-butylamino) silane through a gas distribution plate into a processing region above a substrate. The improvements reduce defects across the surface of the substrate and improve product yield.
摘要:
A compound that includes at least Si, N and C in any combination, such as compounds of formula (R—NH)4-nSiXn wherein R is an alkyl group (which may be the same or different), n is 1, 2 or 3, and X is H or halogen (such as, e.g., bis-tertiary butyl amino silane (BTBAS)), may be mixed with silane or a silane derivative to produce a film. A polysilicon silicon film may be grown by mixing silane (SiH4) or a silane derviative and a compound including Si, N and C, such as BTBAS. Films controllably doped with carbon and/or nitrogen (such as layered films) may be grown by varying the reagents and conditions.
摘要翻译:至少包含任何组合中的Si,N和C的化合物,例如式(R-NH)4-n-SiX n N的化合物,其中R是烷基 (其可以相同或不同),n为1,2或3,X为H或卤素(例如双叔丁基氨基硅烷(BTBAS))可与硅烷或硅烷衍生物混合 制作一部电影。 可以通过混合硅烷(SiH 4 SO 4)或硅烷衍生物和包括Si,N和C的化合物如BTBAS来生长多晶硅硅膜。 可以通过改变试剂和条件来生长可控地掺杂有碳和/或氮的膜(例如层状膜)。