公开(公告)号：US20050255714A1

公开(公告)日：2005-11-17

申请号：US11152501

申请日：2005-06-14

申请人： R. Iyer ,  Sean Seutter ,  Sanjeev Tandon ,  Errol Sanchez ,  Shulin Wang

发明人： R. Iyer ,  Sean Seutter ,  Sanjeev Tandon ,  Errol Sanchez ,  Shulin Wang

IPC分类号： C23C16/34 ,  H01L21/31 ,  H01L21/318

CPC分类号： H01L21/0217 ,  C23C16/345 ,  H01L21/02208 ,  H01L21/02271 ,  H01L21/3185

摘要： Embodiments of the invention generally provide a method for depositing a film containing silicon (Si) and nitrogen (N). In one embodiment, the method includes heating a substrate disposed in a processing chamber to a temperature less than about 650 degrees Celsius, flowing a nitrogen-containing gas into the processing chamber, flowing a silicon-containing gas into the processing chamber, and depositing a SiN-containing layer on a substrate. The silicon-containing gas is at least one of a gas identified as NR2—Si(R′2)—Si(R′2)—NR2 (amino(di)silanes), R3—Si—N═N═N (silyl azides), R′3—Si—NR—NR2 (silyl hydrazines) or 1,3,4,5,7,8-hexamethytetrasiliazane, wherein R and R′ comprise at least one functional group selected from the group of a halogen, an organic group having one or more double bonds, an organic group having one or more triple bonds, an aliphatic alkyl group, a cyclical alkyl group, an aromatic group, an organosilicon group, an alkyamino group, or a cyclic group containing N or Si.

摘要翻译： 本发明的实施方案通常提供一种沉积含有硅（Si）和氮（N）的膜的方法。 在一个实施例中，该方法包括将设置在处理室中的基板加热至低于约650摄氏度的温度，使含氮气体流入处理室，使含硅气体流入处理室，并将 衬底上的含SiN层。 含硅气体是被鉴定为NR 2 -Si（R'2）-Si（R'2）-Si（R'2）-Si ）-NR 2（氨基（二）硅烷），R 3 -Si-NNN（甲硅烷基叠氮化物），R'3 -Si- NR-NR 2（甲硅烷基肼）或1,3,4,5,7,8-六甲基四硅氮烷，其中R和R'包含至少一个选自以下的官能团：卤素， 具有一个或多个双键的有机基团，具有一个或多个三键的有机基团，脂肪族烷基，环状烷基，芳族基团，有机硅基团，烷基氨基或含有N或Si的环状基团。

公开(公告)号：US07365029B2

公开(公告)日：2008-04-29

申请号：US11152501

申请日：2005-06-14

申请人： R. Suryanarayanan Iyer ,  Sean M. Seutter ,  Sanjeev Tandon ,  Errol Antonio C. Sanchez ,  Shulin Wang

发明人： R. Suryanarayanan Iyer ,  Sean M. Seutter ,  Sanjeev Tandon ,  Errol Antonio C. Sanchez ,  Shulin Wang

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/0217 ,  C23C16/345 ,  H01L21/02208 ,  H01L21/02271 ,  H01L21/3185

摘要： Embodiments of the invention generally provide a method for depositing a film containing silicon (Si) and nitrogen (N). In one embodiment, the method includes heating a substrate disposed in a processing chamber to a temperature less than about 650 degrees Celsius, flowing a nitrogen-containing gas into the processing chamber, flowing a silicon-containing gas into the processing chamber, and depositing a SiN-containing layer on a substrate. The silicon-containing gas is at least one of a gas identified as NR2—Si(R′2)—Si(R′2)—NR2 (amino(di)silanes), R3—Si—N═N═N (silyl azides), R′3—Si—NR—NR2 (silyl hydrazines) or 1,3,4,5,7,8-hexamethytetrasiliazane, wherein R and R′ comprise at least one functional group selected from the group of a halogen, an organic group having one or more double bonds, an organic group having one or more triple bonds, an aliphatic alkyl group, a cyclical alkyl group, an aromatic group, an organosilicon group, an alkyamino group, or a cyclic group containing N or Si.

摘要翻译： 本发明的实施方案通常提供一种沉积含有硅（Si）和氮（N）的膜的方法。 在一个实施例中，该方法包括将设置在处理室中的基板加热至低于约650摄氏度的温度，使含氮气体流入处理室，使含硅气体流入处理室，并将 衬底上的含SiN层。 含硅气体是被鉴定为NR 2 -Si（R'2）-Si（R'2）-Si（R'2）-Si ）-NR 2（氨基（二）硅烷），R 3 -Si-NNN（甲硅烷基叠氮化物），R'3 -Si- NR-NR 2（甲硅烷基肼）或1,3,4,5,7,8-六甲基四硅氮烷，其中R和R'包含至少一个选自以下的官能团：卤素， 具有一个或多个双键的有机基团，具有一个或多个三键的有机基团，脂肪族烷基，环状烷基，芳族基团，有机硅基团，烷基氨基或含有N或Si的环状基团。

公开(公告)号：US06559039B2

公开(公告)日：2003-05-06

申请号：US09858821

申请日：2001-05-15

申请人： Shulin Wang ,  Lee Luo ,  Steven A. Chen ,  Errol Sanchez ,  Xianzhi Tao ,  Zoran Dragojlovic ,  Li Fu

发明人： Shulin Wang ,  Lee Luo ,  Steven A. Chen ,  Errol Sanchez ,  Xianzhi Tao ,  Zoran Dragojlovic ,  Li Fu

IPC分类号： H01L2124

CPC分类号： H01L21/67103 ,  C23C16/24 ,  C23C16/45557 ,  C23C16/4586 ,  C23C16/46 ,  H01L21/28556 ,  H01L21/76877

摘要： A method for depositing doped polycrystalline or amorphous silicon film. The method includes placing a substrate onto a susceptor. The susceptor includes a body having a resistive heater therein and a thermocouple in physical contact with the resistive heater. The susceptor is located in the process chamber such that the process chamber has a top portion above the susceptor and a bottom portion below the susceptor. The method further includes heating the susceptor. The method further includes providing a process gas mix into the process chamber through a shower head located on the susceptor. The process gas mix includes a silicon source gas, a dopant gas, and a carrier gas. The carrier gas includes nitrogen. The method further includes forming the doped silicon film from the silicon source gas.

摘要翻译： 一种沉积掺杂多晶或非晶硅膜的方法。 该方法包括将基底放置在基座上。 感受体包括其中具有电阻加热器的主体和与电阻加热器物理接触的热电偶。 感受体位于处理室中，使得处理室具有在基座上方的顶部部分和基座下方的底部部分。 该方法还包括加热基座。 该方法还包括通过位于基座上的喷淋头将工艺气体混合物提供到处理室中。 处理气体混合物包括硅源气体，掺杂剂气体和载气。 载气包括氮气。 该方法还包括从硅源气体形成掺杂硅膜。

公开(公告)号：US06726955B1

公开(公告)日：2004-04-27

申请号：US09605518

申请日：2000-06-27

申请人： Shulin Wang ,  Steven A. Chen ,  Lee Luo ,  Errol Sanchez

发明人： Shulin Wang ,  Steven A. Chen ,  Lee Luo ,  Errol Sanchez

IPC分类号： C23C1624

CPC分类号： C23C16/24 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/0262

摘要： A method of forming a polycrystalline silicon film comprising: providing a process gas mix comprising a silicon source gas and a dilution gas mix wherein the dilution gas mix comprises H2 and an inert gas; and forming a polycrystalline silicon film from said silicon source gas.

摘要翻译： 一种形成多晶硅膜的方法，包括：提供包括硅源气体和稀释气体混合物的工艺气体混合物，其中所述稀释气体混合物包含H 2和惰性气体; 以及从所述硅源气体形成多晶硅膜。

公开(公告)号：US06991999B2

公开(公告)日：2006-01-31

申请号：US09948461

申请日：2001-09-07

申请人： Li Fu ,  Shulin Wang ,  Luo Lee ,  Steven A. Chen ,  Errol Sanchez

发明人： Li Fu ,  Shulin Wang ,  Luo Lee ,  Steven A. Chen ,  Errol Sanchez

IPC分类号： H01L29/04

CPC分类号： H01L21/28035 ,  H01L29/4925 ,  Y10S438/969

摘要： A bi-layer silicon electrode and its method of fabrication is described. The electrode of the present invention comprises a lower polysilicon film having a random grain microstructure, and an upper polysilicon film having a columnar grain microstructure.

公开(公告)号：US07611976B2

公开(公告)日：2009-11-03

申请号：US11428758

申请日：2006-07-05

申请人： Yi Ma ,  Khaled Z. Ahmed ,  Kevin L. Cunningham ,  Robert C. McIntosh ,  Abhilash J. Mayur ,  Haifan Liang ,  Mark Yam ,  Toi Yue Becky Leung ,  Christopher Olsen ,  Shulin Wang ,  Majeed Foad ,  Gary Eugene Miner

发明人： Yi Ma ,  Khaled Z. Ahmed ,  Kevin L. Cunningham ,  Robert C. McIntosh ,  Abhilash J. Mayur ,  Haifan Liang ,  Mark Yam ,  Toi Yue Becky Leung ,  Christopher Olsen ,  Shulin Wang ,  Majeed Foad ,  Gary Eugene Miner

IPC分类号： H01L21/425

CPC分类号： H01L21/268 ,  H01L21/28035 ,  H01L21/324

摘要： Embodiments of the invention generally provide a method for forming a doped silicon-containing material on a substrate. In one embodiment, the method provides depositing a polycrystalline layer on a dielectric layer and implanting the polycrystalline layer with a dopant to form a doped polycrystalline layer having a dopant concentration within a range from about 1×1019 atoms/cm3 to about 1×1021 atoms/cm3, wherein the doped polycrystalline layer contains silicon or may contain germanium, carbon, or boron. The substrate may be heated to a temperature of about 800° C. or higher, such as about 1,000° C., during the rapid thermal anneal. Subsequently, the doped polycrystalline layer may be exposed to a laser anneal and heated to a temperature of about 1,000° C. or greater, such within a range from about 1,050° C. to about 1,400° C., for about 500 milliseconds or less, such as about 100 milliseconds or less.

摘要翻译： 本发明的实施方案通常提供了在衬底上形成掺杂的含硅材料的方法。 在一个实施例中，该方法提供在电介质层上沉积多晶层并且用掺杂剂注入多晶层以形成掺杂浓度在约1×10 19原子/ cm 3至约1×10 21原子/ cm 3范围内的掺杂多晶层，其中 掺杂多晶层含有硅或可含有锗，碳或硼。 在快速热退火期间，衬底可以被加热到约800℃或更高，例如约1000℃的温度。 随后，掺杂多晶层可以暴露于激光退火并加热至约1000℃或更高的温度，例如在约1050℃至约1400℃的温度下，持续约500毫秒或更短 ，例如约100毫秒或更少。

公开(公告)号：US20060024926A1

公开(公告)日：2006-02-02

申请号：US11229224

申请日：2005-09-16

申请人： Li Fu ,  Sheeba Panayil ,  Shulin Wang ,  Christopher Quentin ,  Lee Luo ,  Aihua Chen ,  Zianzhi Tao

发明人： Li Fu ,  Sheeba Panayil ,  Shulin Wang ,  Christopher Quentin ,  Lee Luo ,  Aihua Chen ,  Zianzhi Tao

IPC分类号： H01L21/20

CPC分类号： C23C16/24 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262

摘要： Method of forming a lightly phosphorous doped silicon film. A substrate is provided. A process gas comprising a phosphorous source gas and a disilane gas is used to form a lightly phosphorous doped silicon film on the substrate. The diluted phosphorous source gas has a phosphorous concentration of 1%. The phosphorous source gas and the disilane gas have a flow ratio less than 1:100. The lightly phosphorous doped silicon film has a phosphorous doping concentration less than 1×1020 atoms/cm3.

摘要翻译： 形成轻掺磷硅膜的方法。 提供基板。 使用包含磷源气体和乙硅烷气体的工艺气体在衬底上形成轻掺磷硅膜。 稀释的磷源气体的磷浓度为1％。 磷源气体和乙硅烷气体的流量比小于1:100。 轻掺磷硅膜的磷掺杂浓度小于1×10 20原子/ cm 3。

公开(公告)号：US06802906B2

公开(公告)日：2004-10-12

申请号：US10051651

申请日：2002-01-15

申请人： Xiaoliang Jin ,  Shulin Wang ,  Lee Luo ,  Henry Ho ,  Steven A. Chen

发明人： Xiaoliang Jin ,  Shulin Wang ,  Lee Luo ,  Henry Ho ,  Steven A. Chen

IPC分类号： C23C1600

CPC分类号： C23C16/45521 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45591 ,  C23C16/46 ,  H01L21/67109

摘要： An apparatus that includes a pumping plate having a skirt, where the skirt contains a number of holes and a wafer access slot, and where the number of holes are sized and positioned to provide uniform heating of a susceptor.

摘要翻译： 一种装置，其包括具有裙部的泵板，其中所述裙部包含多个孔和晶片通道狭槽，并且其中孔的数量被定尺寸和定位以提供感受器的均匀加热。

公开(公告)号：US06582522B2

公开(公告)日：2003-06-24

申请号：US09798424

申请日：2001-03-02

申请人： Lee Luo ,  Henry Ho ,  Shulin Wang ,  Binh Hoa Tran ,  Alexander Tam ,  Errol A. C. Sanchez ,  Xianzhi Tao ,  Steven A. Chen

发明人： Lee Luo ,  Henry Ho ,  Shulin Wang ,  Binh Hoa Tran ,  Alexander Tam ,  Errol A. C. Sanchez ,  Xianzhi Tao ,  Steven A. Chen

IPC分类号： C23C1600

CPC分类号： C23C16/45521 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45591 ,  C23C16/46

摘要： Provided herein is an emissivity-change-free pumping plate kit used in a single wafer chamber. This kit comprises a top open pumping plate, and optionally a skirt and/or a second stage choking plate. The skirt may be installed around the wafer heater, underneath the wafer heater, or along the chamber body inside the chamber. The choking plate is installed downstream of the top open pumping plate along the purge gas flow. Also provided is a method of preventing emissivity change and further providing optimal film thickness uniformity during wafer processing by utilizing such kit in the chamber.

公开(公告)号：US06548402B2

公开(公告)日：2003-04-15

申请号：US09330696

申请日：1999-06-11

申请人： Shulin Wang ,  Ming Xi ,  Frederick Wu ,  Ramanujapuram A. Srinivas ,  Yehuda Demayo ,  Zvi Lando ,  Mei Chang ,  Russell C. Ellwanger

发明人： Shulin Wang ,  Ming Xi ,  Frederick Wu ,  Ramanujapuram A. Srinivas ,  Yehuda Demayo ,  Zvi Lando ,  Mei Chang ,  Russell C. Ellwanger

IPC分类号： C23C1634

CPC分类号： H01L21/76846 ,  C23C16/34 ,  H01L21/28556 ,  H01L21/76877

摘要： A method of forming a titanium nitride (TiN) layer using a reaction between ammonia (NH3) and titanium tetrachloride (TiCl4). In one embodiment, an NH3:TiCl4 ratio of about 8.5 is used to deposit a TiN layer at a temperature of about 500° C. at a pressure of about 20 torr. In another embodiment, a composite TiN layer is formed by alternately depositing TiN layers of different thicknesses, using process conditions having different NH3:TiCl4 ratios. In one preferred embodiment, a TiN layer of less than about 20 Å is formed at an NH3:TiCl4 ratio of about 85, followed by a deposition of a thicker TiN layer at an NH3:TiCl4 ratio of about 8.5. By repeating the alternate film deposition using the two different process conditions, a composite TiN layer is formed. This composite TiN layer has an improved overall step coverage and reduced stress, compared to a standard TiN process, and is suitable for small geometry plug fill applications.

摘要翻译： 使用氨（NH 3）与四氯化钛（TiCl 4）之间的反应形成氮化钛（TiN）层的方法。 在一个实施方案中，使用约8.5的NH 3 :TiCl 4比率在约20托的压力下在约500℃的温度下沉积TiN层。 在另一个实施例中，通过使用具有不同NH 3 :TiCl 4比率的工艺条件交替沉积不同厚度的TiN层来形成复合TiN层。 在一个优选的实施方案中，以大约85的NH 3 :TiCl 4比例形成小于约的TiN层，然后以约8.5的NH 3 :TiCl 4比率沉积较厚的TiN层。 通过使用两种不同的工艺条件重复替代膜沉积，形成复合TiN层。 与标准TiN工艺相比，该复合TiN层具有改进的整体台阶覆盖和减小的应力，适用于小型几何填塞应用。