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公开(公告)号：US08450711B2
公开(公告)日：2013-05-28
申请号：US13142582
申请日：2009-01-26
IPC分类号： H01L29/02
CPC分类号： G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/51 , G11C2213/55 , G11C2213/56 , G11C2213/72 , G11C2213/73 , G11C2213/74 , H01L27/2463 , H01L29/8615 , H01L45/08 , H01L45/1233 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/148
摘要： Various embodiments of the present invention are directed to electronic devices, which combine reconfigurable diode rectifying states with nonvolatile memristive switching. In one aspect, an electronic device (210,230,240) comprises an active region (212) sandwiched between a first electrode (104) and a second electrode (106). The active region includes two or more semiconductor layers and at least one dopant that is capable of being selectively positioned within the active region to control the flow of charge carriers through the device.
摘要翻译： 本发明的各种实施例涉及将可重构二极管整流状态与非易失性忆阻转换组合的电子器件。 一方面，电子设备（210,230,240）包括夹在第一电极（104）和第二电极（106）之间的有源区（212）。 有源区域包括两个或更多个半导体层和至少一个能够选择性地定位在有源区域内以控制电荷载流子通过该器件的流动的掺杂剂。
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公开(公告)号：US20110121359A1
公开(公告)日：2011-05-26
申请号：US13056101
申请日：2008-07-31
CPC分类号： H01L29/861 , H01L27/101 , H01L27/1021 , H01L29/8615 , H01L29/8616 , H01L29/872 , H01L45/08 , H01L45/1233 , H01L45/14 , H01L45/145 , H01L45/146 , H01L45/147
摘要： Embodiments of the present invention are directed to reconfigurable two-terminal electronic switch devices (100) comprising a compound (102) sandwiched between two electrodes (104,106). These devices are configured so that the two electrode/compound interface regions can be either rectifying or conductive, depending on the concentration of dopants at the respective interface, which provides four different device operating characteristics. By forcing charged dopants into or out of the interface regions with an applied electric field pulse, a circuit element can be switched from one type of stable operation to another in at least three different ways. A family of devices built to express these properties display behaviors that provide new opportunities for nanoscale electronic devices.
摘要翻译： 本发明的实施例涉及包括夹在两个电极（104,106）之间的化合物（102）的可重新配置的两端子电子开关装置（100）。 这些器件被配置为使得两个电极/复合界面区域可以是整流或导电，这取决于各个界面处的掺杂剂的浓度，其提供四种不同的器件工作特性。 通过用施加的电场脉冲将带电荷的掺杂剂强制进出界面区域，电路元件可以以至少三种不同的方式从一种类型的稳定操作切换到另一种。 一系列用于表现这些属性的设备显示出为纳米级电子设备提供新机会的行为。
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公开(公告)号：US20110266513A1
公开(公告)日：2011-11-03
申请号：US13142582
申请日：2009-01-26
IPC分类号： H01L45/00
CPC分类号： G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/51 , G11C2213/55 , G11C2213/56 , G11C2213/72 , G11C2213/73 , G11C2213/74 , H01L27/2463 , H01L29/8615 , H01L45/08 , H01L45/1233 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/148
摘要： Various embodiments of the present invention are directed to electronic devices, which combine reconfigurable diode rectifying states with nonvolatile memristive switching. In one aspect, an electronic device (210,230,240) comprises an active region (212) sandwiched between a first electrode (104) and a second electrode (106). The active region includes two or more semiconductor layers and at least one dopant that is capable of being selectively positioned within the active region to control the flow of charge carriers through the device.
摘要翻译： 本发明的各种实施例涉及将可重构二极管整流状态与非易失性忆阻转换组合的电子器件。 一方面，电子设备（210,230,240）包括夹在第一电极（104）和第二电极（106）之间的有源区（212）。 有源区域包括两个或更多个半导体层和至少一个能够选择性地定位在有源区域内以控制电荷载流子通过该器件的流动的掺杂剂。
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公开(公告)号：US20080181558A1
公开(公告)日：2008-07-31
申请号：US11701314
申请日：2007-01-31
CPC分类号： G02B6/4201 , G02B6/43 , H01S5/02
摘要： One embodiment in accordance with the invention is an apparatus that can include an optical circuit wafer and an integrated circuit wafer. The optical circuit wafer and the integrated circuit wafer are bonded together by a wafer bonding process.
摘要翻译： 根据本发明的一个实施例是可以包括光电路晶片和集成电路晶片的装置。 光电晶片和集成电路晶片通过晶片接合工艺结合在一起。
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公开(公告)号：US07924413B2
公开(公告)日：2011-04-12
申请号：US12074133
申请日：2008-02-29
申请人： R. Stanley Williams , Shih-Yuan Wang , Philip J. Kuekes , Theodore I. Kamins , Duncan Stewart , Alexandre M. Bratkovski , Jason Blackstock , Zhiyong Li
发明人： R. Stanley Williams , Shih-Yuan Wang , Philip J. Kuekes , Theodore I. Kamins , Duncan Stewart , Alexandre M. Bratkovski , Jason Blackstock , Zhiyong Li
IPC分类号： G01N21/00
CPC分类号： H01L33/18 , B82Y20/00 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L33/06 , H01L33/08 , H01S5/341 , H01S5/4031
摘要： Embodiments of the present invention are related to nanowire-based devices that can be configured and operated as modulators, chemical sensors, and light-detection devices. In one aspect, a nanowire-based device includes a reflective member, a resonant cavity surrounded by at least a portion of the reflective member, and at least one nanowire disposed within the resonant cavity. The nanowire includes at least one active segment selectively disposed along the length of the nanowire to substantially coincide with at least one antinode of light resonating within the cavity. The active segment can be configured to interact with the light resonating within the cavity.
摘要翻译： 本发明的实施例涉及可以配置和操作为调制器，化学传感器和光检测装置的基于纳米线的器件。 在一个方面，基于纳米线的器件包括反射部件，由反射部件的至少一部分包围的谐振腔以及设置在谐振腔内的至少一个纳米线。 纳米线包括至少一个有源区段，沿着纳米线的长度选择性地设置，以与腔内谐振的至少一个光波导基本重合。 活动段可以被配置为与腔内共振的光相互作用。
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公开(公告)号：US07803712B2
公开(公告)日：2010-09-28
申请号：US11636264
申请日：2006-12-07
申请人： Pavel Kornilovich , Yong Chen , Duncan Stewart , R. Stanley Williams , Philip J. Kuekes , Mehmet Fatih Yanik
发明人： Pavel Kornilovich , Yong Chen , Duncan Stewart , R. Stanley Williams , Philip J. Kuekes , Mehmet Fatih Yanik
IPC分类号： H01L21/308
CPC分类号： H01L21/76838 , B81C99/009 , B81C2201/0153 , B82Y10/00 , B82Y40/00 , G03F7/0002
摘要： A mold with a protruding pattern is provided that is pressed into a thin polymer film via an imprinting process. Controlled connections between nanowires and microwires and other lithographically-made elements of electronic circuitry are provided. An imprint stamp is configured to form arrays of approximately parallel nanowires which have (1) micro dimensions in the X direction, (2) nano dimensions and nano spacing in the Y direction, and three or more distinct heights in the Z direction. The stamp thus formed can be used to connect specific individual nanowires to specific microscopic regions of microscopic wires or pads. The protruding pattern in the mold creates recesses in the thin polymer film, so the polymer layer acquires the reverse of the pattern on the mold. After the mold is removed, the film is processed such that the polymer pattern can be transferred on a metal/semiconductor pattern on the substrate.
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公开(公告)号：US07741638B2
公开(公告)日：2010-06-22
申请号：US11287113
申请日：2005-11-23
IPC分类号： H01L23/58
CPC分类号： G11C13/0009 , G11C2213/55 , G11C2213/56 , G11C2213/77 , H01L45/04 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/14 , H01L45/142 , H01L45/143 , H01L45/146 , H01L51/0591
摘要： A control layer for use in a junction of a nanoscale electronic switching device is disclosed. The control layer includes a material that is chemically compatible with a connecting layer and at least one electrode in the nanoscale switching device. The control layer is adapted to control at least one of electrochemical reaction paths, electrophysical reaction paths, and combinations thereof during operation of the device.
摘要翻译： 公开了一种用于纳米级电子开关器件的结的控制层。 控制层包括与纳米级切换装置中的连接层和至少一个电极化学相容的材料。 控制层适于在装置的操作期间控制电化学反应路径，电物理反应路径及其组合中的至少一个。
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公开(公告)号：US07613538B2
公开(公告)日：2009-11-03
申请号：US11492365
申请日：2006-07-24
申请人： Wei Wu , Duncan Stewart , Shih-Yuan Wang , R. Stanley Williams
发明人： Wei Wu , Duncan Stewart , Shih-Yuan Wang , R. Stanley Williams
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A method of contact lithography includes predicting distortions likely to occur in transferring a pattern from a mold to a substrate during a contact lithography process; and modifying the mold to compensate for the distortions. A contact lithography system includes a design subsystem configured to generate data describing a lithography pattern; an analysis subsystem configured to identify one or more distortions likely to occur when using a mold created from the data; and a mold modification subsystem configured to modify the data to compensate for the one or more distortions identified by the analysis subsystem.
摘要翻译： 接触光刻的方法包括预测在接触光刻工艺期间将图案从模具转移到衬底可能发生的变形; 并修改模具以补偿失真。 接触光刻系统包括设计子系统，被配置为产生描述光刻图案的数据; 分析子系统被配置为识别当使用从数据创建的模具时可能发生的一个或多个失真; 以及模具修改子系统，被配置为修改数据以补偿由分析子系统识别的一个或多个失真。
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公开(公告)号：US20080218740A1
公开(公告)日：2008-09-11
申请号：US12074133
申请日：2008-02-29
申请人： R. Stanley Williams , Shih-Yuan Wang , Philip J. Kuekes , Theodore I. Kamins , Duncan Stewart , Alexandre M. Bratkovski , Jason Blackstock , Zhiyong Li
发明人： R. Stanley Williams , Shih-Yuan Wang , Philip J. Kuekes , Theodore I. Kamins , Duncan Stewart , Alexandre M. Bratkovski , Jason Blackstock , Zhiyong Li
IPC分类号： G01N21/00
CPC分类号： H01L33/18 , B82Y20/00 , H01L29/0665 , H01L29/0673 , H01L29/068 , H01L33/06 , H01L33/08 , H01S5/341 , H01S5/4031
摘要： Embodiments of the present invention are related to nanowire-based devices that can be configured and operated as modulators, chemical sensors, and light-detection devices. In one aspect, a nanowire-based device includes a reflective member, a resonant cavity surrounded by at least a portion of the reflective member, and at least one nanowire disposed within the resonant cavity. The nanowire includes at least one active segment selectively disposed along the length of the nanowire to substantially coincide with at least one antinode of light resonating within the cavity. The active segment can be configured to interact with the light resonating within the cavity.
摘要翻译： 本发明的实施例涉及可以配置和操作为调制器，化学传感器和光检测装置的基于纳米线的器件。 在一个方面，基于纳米线的器件包括反射部件，由反射部件的至少一部分包围的谐振腔以及设置在谐振腔内的至少一个纳米线。 纳米线包括至少一个有源区段，沿着纳米线的长度选择性地设置，以与腔内谐振的至少一个光波导基本重合。 活动段可以被配置为与腔内共振的光相互作用。
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公开(公告)号：US20080021587A1
公开(公告)日：2008-01-24
申请号：US11492365
申请日：2006-07-24
申请人： Wei Wu , Duncan Stewart , Shih-Yuan Wang , R. Stanley Williams
发明人： Wei Wu , Duncan Stewart , Shih-Yuan Wang , R. Stanley Williams
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： A method of contact lithography includes predicting distortions likely to occur in transferring a pattern from a mold to a substrate during a contact lithography process; and modifying the mold to compensate for the distortions. A contact lithography system includes a design subsystem configured to generate data describing a lithography pattern; an analysis subsystem configured to identify one or more distortions likely to occur when using a mold created from the data; and a mold modification subsystem configured to modify the data to compensate for the one or more distortions identified by the analysis subsystem.
摘要翻译： 接触光刻的方法包括预测在接触光刻工艺期间将图案从模具转移到衬底可能发生的变形; 并修改模具以补偿失真。 接触光刻系统包括设计子系统，被配置为产生描述光刻图案的数据; 分析子系统被配置为识别当使用从数据创建的模具时可能发生的一个或多个失真; 以及模具修改子系统，被配置为修改数据以补偿由分析子系统识别的一个或多个失真。
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