公开(公告)号：US3790853A

公开(公告)日：1974-02-05

申请号：US3790853D

申请日：1973-01-19

申请人： RCA CORP

发明人： PANKOVE J

IPC分类号： G02F1/015 ,  G02F1/29 ,  H01L31/14 ,  H01L15/00

CPC分类号： G02F1/29 ,  G02F1/015 ,  G02F1/293 ,  G02F2001/0152

摘要： A semiconductor light ray deflector is presented which provides for the deflection of rays of light due to changes in the refractive index within a semiconductor caused by modulation of the distribution of excess carriers in the semiconductor.

摘要翻译： 提出了一种半导体光线偏转器，其通过调制半导体中过量载流子的分布而导致由于半导体内的折射率的变化而引起的光线偏转。

公开(公告)号：US3783353A

公开(公告)日：1974-01-01

申请号：US3783353D

申请日：1972-10-27

申请人： RCA CORP

发明人： PANKOVE J

IPC分类号： H01L33/00 ,  H01L33/32 ,  H05B33/12 ,  H05B33/00

CPC分类号： H01L33/32 ,  H01L33/00 ,  H05B33/12 ,  Y10S148/113 ,  Y10S148/15 ,  Y10S438/956

摘要： An electroluminescent semiconductor device includes a transparent substrate having mounted on one surface a body of insulating crystalline gallium nitride and on its other surface a semiconductor diode which is capable of emitting red light. Contacts are provided for the gallium nitride body and the diode with one contact being common to each. When a voltage is applied across the gallium nitride body either blue or green light is emitted depending on the polarity of the voltage. When a voltage is applied across the diode, red light is emitted. All three colors of the emitted light can be seen through one surface of the gallium nitride body. A plurality of the electroluminescent semiconductor devices can be formed in an array to provide a flat display panel.

摘要翻译： 电致发光半导体器件包括透明衬底，该透明衬底安装在绝缘晶体氮化镓的主体的一个表面上，并且在其另一表面上安装能够发射红光的半导体二极管。 提供了用于氮化镓体和二极管的触点，其中一个触点是共同的。 当跨越氮化镓体施加电压时，根据电压的极性发射蓝色或绿色光。 当二极管上施加电压时，会发出红光。 可以通过氮化镓体的一个表面看到发射光的所有三种颜色。 多个电致发光半导体器件可以形成为阵列以提供平面显示面板。

公开(公告)号：US3811963A

公开(公告)日：1974-05-21

申请号：US33352873

申请日：1973-02-20

申请人： RCA CORP

发明人： HAWRYLO F ,  PANKOVE J

IPC分类号： C30B19/04 ,  H01L21/208 ,  H01L7/38

CPC分类号： C30B19/04 ,  C30B29/406 ,  H01L21/02387 ,  H01L21/0242 ,  H01L21/0254 ,  Y10S117/907

摘要： AN EPITAXIAL LAYER OF GALLIUM NITRIDE IS DEPOSITED FROM A MELT CONTAINING A SMALL CONCENTRATION OF GALLIUM AND A LARGE CONCENTRATION OF A METAL OR MIXTURE OF METALS WHICH DO NOT FORM A STABLE COMPOUND WITH NITROGEN. THE MELT IS SUBJECTED TO AN ATMOSPHERE CONTAINING NITROGEN SO AS TO FORM GALLIUM NITRITE IN THE MELT. A SUBSTRATE IS BROUGHT INTO CONTACT WITH THE GALLIUM NITRITE CONTAINING MELT AND THE MELT IS COOLED TO DEPOSIT GALLIUM NITRITE FROM THE MELT ONTO THE SUBSTRATE. THE SUBSTRATE IS THEN SEPARATED FROM THE MELT.

公开(公告)号：US3740622A

公开(公告)日：1973-06-19

申请号：US3740622D

申请日：1972-07-10

申请人： RCA CORP

发明人： PANKOVE J ,  NORRIS P

IPC分类号： H01L33/00 ,  H01S5/00 ,  H01S5/026 ,  H01S5/323 ,  H01L3/00

CPC分类号： H01L33/007 ,  H01L33/0037

摘要： An electroluminescent semiconductor device including a body of crystalline gallium nitride, a layer of silicon nitride on a surface of the body, a metal layer on the silicon nitride layer and an ohmic metal contact on the body. When a bias is applied between the metal layer and the contact which with respect to the ohmic contact is first negative and then positive, ultra violet radiation will be emitted from the body.

摘要翻译： 一种电致发光半导体器件，包括晶体氮化镓体，主体表面上的氮化硅层，氮化硅层上的金属层和体上的欧姆金属接触。 当在金属层和接触之间施加偏压时，相对于欧姆接触，偏压首先是负的，然后是正的，紫外线辐射将从身体发射。