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公开(公告)号：US09423433B2
公开(公告)日：2016-08-23
申请号：US14599674
申请日：2015-01-19
Applicant: RF Micro Devices, Inc.
Inventor： Douglas Andrew Teeter , Ming Ji , Praveen Varma Nadimpalli
CPC classification number: G01R21/10 , H03F3/195 , H03F3/245 , H03F2200/204 , H03F2200/411 , H03F2200/451 , H03F2200/465 , H03F2200/541 , H03G3/3036
Abstract: An RF electronics module includes a grounding plate, a non-conductive substrate, a number of conductive vias, RF PA circuitry, and RF power detection circuitry. The non-conductive substrate is over the grounding plate. The conductive vias extend parallel to one another from a surface of the non-conductive substrate opposite the grounding plate through the non-conductive substrate to the grounding plate. The RF PA circuitry is coupled to the grounding plate through a first one of the conductive vias. The RF power detection circuitry is coupled to a second one of the conductive vias and configured to measure a signal induced in the second one of the conductive vias due to electromagnetic coupling with the first one of conductive vias. The first one of the conductive vias is adjacent to the second one of the conductive vias.
Abstract translation: RF电子模块包括接地板，非导电衬底，多个导电通孔，RF PA电路和RF功率检测电路。 非导电衬底在接地板上。 导电通孔从与非接触板相对的非导电衬底的表面通过非导电衬底彼此平行地延伸到接地板。 RF PA电路通过第一导电通孔耦合到接地板。 RF功率检测电路耦合到导电通孔中的第二个，并且被配置为测量由于与第一导电通孔的电磁耦合而在第二导电通孔中感应的信号。 导电通孔中的第一个与第二个导电通孔相邻。
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公开(公告)号：US09325281B2
公开(公告)日：2016-04-26
申请号：US14067019
申请日：2013-10-30
Applicant: RF Micro Devices, Inc.
Inventor： Chris Levesque , Kevin Wesley Kobayashi , Praveen Varma Nadimpalli , Ricke W. Clark
CPC classification number: H03F3/21 , H03F1/305 , H03F1/523 , H03F3/193 , H03F3/72 , H03F2200/18 , H03F2200/468 , H03F2203/45284 , H03G3/3042
Abstract: The present disclosure provides a power amplifier controller for starting up, operating, and shutting down a power amplifier. The power amplifier controller includes current sense amplifier circuitry adapted to monitor a main current of the power amplifier. A bias generator is also included and adapted to provide a predetermined standby bias voltage and an operational bias voltage based upon a main current level sensed by the current sense amplifier circuitry. The power amplifier controller further includes a sequencer adapted to control startup and shutdown sequences of the power amplifier. In at least one embodiment, the power amplifier is a gallium nitride (GaN) device, and the main current level sensed is a drain current of the GaN device. Moreover, the bias generator is a gate bias generator provided that the power amplifier is a field effect transistor (FET) device.
Abstract translation: 本公开提供了用于启动，操作和关闭功率放大器的功率放大器控制器。 功率放大器控制器包括适于监视功率放大器的主电流的电流检测放大器电路。 还包括偏置发生器并且适于基于由电流感测放大器电路感测的主电流电平提供预定待机偏置电压和操作偏置电压。 功率放大器控制器还包括适于控制功率放大器的启动和关闭序列的定序器。 在至少一个实施例中，功率放大器是氮化镓（GaN）器件，并且感测到的主电流电平是GaN器件的漏极电流。 此外，偏置发生器是栅极偏置发生器，其中功率放大器是场效应晶体管（FET）器件。
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3.发明申请RF AMPLIFICATION DEVICE WITH POWER PROTECTION DURING HIGH SUPPLY VOLTAGE CONDITIONS 有权在高电压条件下具有电源保护功能的射频放大器件公开(公告)号：US20150070098A1
公开(公告)日：2015-03-12
申请号：US14478822
申请日：2014-09-05
Applicant: RF Micro Devices, Inc.
Inventor： David Q. Ngo , Michael B. Thomas , Praveen Varma Nadimpalli
CPC classification number: H03F1/0222 , H03F3/19 , H03F3/21 , H03F2200/408 , H03F2200/451 , H03F2203/21193
Abstract: Radio frequency (RF) amplification devices are disclosed along with methods of providing power to an RF signal. In one embodiment, an RF amplification device includes an RF amplification circuit and a voltage regulation circuit. The RF amplification circuit includes a plurality of RF amplifier stages coupled in cascade. The voltage regulation circuit is coupled to provide a regulated voltage to a driver RF amplifier stage. The voltage regulation circuit is configured to generate the regulated voltage so that the maximum output power of the RF amplification circuit is provided approximately at a first power level while the supply voltage is above a threshold voltage level. The first power level should be within the physical capabilities of the RF amplification circuit, and thus, the RF amplification circuit is prevented from being damaged once the supply voltage is above the threshold voltage level.
Abstract translation: 公开了射频（RF）放大装置以及向RF信号提供电力的方法。 在一个实施例中，RF放大装置包括RF放大电路和电压调节电路。 RF放大电路包括级联耦合的多个RF放大器级。 电压调节电路被耦合以向驱动器RF放大器级提供调节电压。 电压调节电路被配置为产生调节电压，使得RF放大电路的最大输出功率大致处于第一功率电平，而电源电压高于阈值电压电平。 第一功率电平应在RF放大电路的物理能力之内，因此，一旦电源电压高于阈值电压电平，就可以防止RF放大电路的损坏。
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Patent Agency Ranking
4.发明授权公开(公告)号：US08736357B2
公开(公告)日：2014-05-27
申请号：US13685850
申请日：2012-11-27
Applicant: RF Micro Devices, Inc.
Inventor： Praveen Varma Nadimpalli , Pradeep Charles Silva
CPC classification number: G05F3/02 , H03F1/0277 , H03F3/211 , H03F3/24 , H03F3/72 , H03F2203/7215 , H03F2203/7221
Abstract: A differential voltage controlled current source generating one or more output currents is based upon a single external resistor. The differential voltage controlled current source may generate an output current that is proportional to a received differential voltage and a bias current with the use of a single external resistor. The technique may be used to generate multiple accurate and process independent current sources. The current sources may be a zero temperature coefficient (ZTC) current, a proportional to absolute temperature (PTAT) current, or an inversely proportional to absolute temperature (NTAT) current. The output of the current sources may be inversely proportional to the resistance of the external resistor.
Abstract translation: 产生一个或多个输出电流的差分电压控制电流源基于单个外部电阻器。 差分电压控制电流源可以产生与使用单个外部电阻器的接收到的差分电压和偏置电流成比例的输出电流。 该技术可用于生成多个准确和流程独立的电流源。 电流源可以是零温度系数（ZTC）电流，与绝对温度（PTAT）电流成比例，或与绝对温度（NTAT）电流成反比。 电流源的输出可能与外部电阻的电阻成反比。
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5.发明申请公开(公告)号：US20130088286A1
公开(公告)日：2013-04-11
申请号：US13685850
申请日：2012-11-27
Applicant: RF Micro Devices, Inc.
Inventor： Praveen Varma Nadimpalli , Pradeep Charles Silva
IPC: G05F3/02
CPC classification number: G05F3/02 , H03F1/0277 , H03F3/211 , H03F3/24 , H03F3/72 , H03F2203/7215 , H03F2203/7221
Abstract: A differential voltage controlled current source generating one or more output currents is based upon a single external resistor. The differential voltage controlled current source may generate an output current that is proportional to a received differential voltage and a bias current with the use of a single external resistor. The technique may be used to generate multiple accurate and process independent current sources. The current sources may be a zero temperature coefficient (ZTC) current, a proportional to absolute temperature (PTAT) current, or an inversely proportional to absolute temperature (NTAT) current. The output of the current sources may be inversely proportional to the resistance of the external resistor.
Abstract translation: 产生一个或多个输出电流的差分电压控制电流源基于单个外部电阻器。 差分电压控制电流源可以产生与使用单个外部电阻器的接收到的差分电压和偏置电流成比例的输出电流。 该技术可用于生成多个准确和流程独立的电流源。 电流源可以是零温度系数（ZTC）电流，与绝对温度（PTAT）电流成比例，或与绝对温度（NTAT）电流成反比。 电流源的输出可能与外部电阻的电阻成反比。
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公开(公告)号：US09793860B2
公开(公告)日：2017-10-17
申请号：US14478822
申请日：2014-09-05
Applicant: RF Micro Devices, Inc.
Inventor： David Q. Ngo , Michael B. Thomas , Praveen Varma Nadimpalli
CPC classification number: H03F1/0222 , H03F3/19 , H03F3/21 , H03F2200/408 , H03F2200/451 , H03F2203/21193
Abstract: Radio frequency (RF) amplification devices are disclosed along with methods of providing power to an RF signal. In one embodiment, an RF amplification device includes an RF amplification circuit and a voltage regulation circuit. The RF amplification circuit includes a plurality of RF amplifier stages coupled in cascade. The voltage regulation circuit is coupled to provide a regulated voltage to a driver RF amplifier stage. The voltage regulation circuit is configured to generate the regulated voltage so that the maximum output power of the RF amplification circuit is provided approximately at a first power level while the supply voltage is above a threshold voltage level. The first power level should be within the physical capabilities of the RF amplification circuit, and thus, the RF amplification circuit is prevented from being damaged once the supply voltage is above the threshold voltage level.
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公开(公告)号：US20150204940A1
公开(公告)日：2015-07-23
申请号：US14599674
申请日：2015-01-19
Applicant: RF Micro Devices, Inc.
Inventor： Douglas Andrew Teeter , Ming Ji , Praveen Varma Nadimpalli
CPC classification number: G01R21/10 , H03F3/195 , H03F3/245 , H03F2200/204 , H03F2200/411 , H03F2200/451 , H03F2200/465 , H03F2200/541 , H03G3/3036
Abstract: An RF electronics module includes a grounding plate, a non-conductive substrate, a number of conductive vias, RF PA circuitry, and RF power detection circuitry. The non-conductive substrate is over the grounding plate. The conductive vias extend parallel to one another from a surface of the non-conductive substrate opposite the grounding plate through the non-conductive substrate to the grounding plate. The RF PA circuitry is coupled to the grounding plate through a first one of the conductive vias. The RF power detection circuitry is coupled to a second one of the conductive vias and configured to measure a signal induced in the second one of the conductive vias due to electromagnetic coupling with the first one of conductive vias. The first one of the conductive vias is adjacent to the second one of the conductive vias.
Abstract translation: RF电子模块包括接地板，非导电衬底，多个导电通孔，RF PA电路和RF功率检测电路。 非导电衬底在接地板上。 导电通孔从与非接触板相对的非导电衬底的表面通过非导电衬底彼此平行地延伸到接地板。 RF PA电路通过第一导电通孔耦合到接地板。 RF功率检测电路耦合到导电通孔中的第二个，并且被配置为测量由于与第一导电通孔的电磁耦合而在第二导电通孔中感应的信号。 导电通孔中的第一个与第二个导电通孔相邻。
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公开(公告)号：US20140118074A1
公开(公告)日：2014-05-01
申请号：US14067019
申请日：2013-10-30
Applicant: RF Micro Devices, Inc.
Inventor： Chris Levesque , Kevin Wesley Kobayashi , Praveen Varma Nadimpalli , Ricke W. Clark
CPC classification number: H03F3/21 , H03F1/305 , H03F1/523 , H03F3/193 , H03F3/72 , H03F2200/18 , H03F2200/468 , H03F2203/45284 , H03G3/3042
Abstract: The present disclosure provides a power amplifier controller for starting up, operating, and shutting down a power amplifier. The power amplifier controller includes current sense amplifier circuitry adapted to monitor a main current of the power amplifier. A bias generator is also included and adapted to provide a predetermined standby bias voltage and an operational bias voltage based upon a main current level sensed by the current sense amplifier circuitry. The power amplifier controller further includes a sequencer adapted to control startup and shutdown sequences of the power amplifier. In at least one embodiment, the power amplifier is a gallium nitride (GaN) device, and the main current level sensed is a drain current of the GaN device. Moreover, the bias generator is a gate bias generator provided that the power amplifier is a field effect transistor (FET) device.
Abstract translation: 本公开提供了用于启动，操作和关闭功率放大器的功率放大器控制器。 功率放大器控制器包括适于监视功率放大器的主电流的电流检测放大器电路。 还包括偏置发生器并且适于基于由电流感测放大器电路感测的主电流电平提供预定待机偏置电压和操作偏置电压。 功率放大器控制器还包括适于控制功率放大器的启动和关闭序列的定序器。 在至少一个实施例中，功率放大器是氮化镓（GaN）器件，并且感测到的主电流电平是GaN器件的漏极电流。 此外，偏置发生器是栅极偏置发生器，其中功率放大器是场效应晶体管（FET）器件。
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