公开(公告)号：US20100288190A1

公开(公告)日：2010-11-18

申请号：US12748435

申请日：2010-03-28

申请人： RONG ZHANG ,  ZILI XIE ,  BIN LIU ,  XIANGQIAN XIU ,  HONG ZHAO ,  XUEMEI HUA ,  PING HAN ,  DEYI FU ,  YI SHI ,  YOUDOU ZHENG

发明人： RONG ZHANG ,  ZILI XIE ,  BIN LIU ,  XIANGQIAN XIU ,  HONG ZHAO ,  XUEMEI HUA ,  PING HAN ,  DEYI FU ,  YI SHI ,  YOUDOU ZHENG

IPC分类号： C30B25/10 ,  C30B25/02

CPC分类号： C23C16/303 ,  C23C16/0218 ,  C30B25/183 ,  C30B25/186 ,  C30B29/403

摘要： A kind of growth method of non-polarized-plane InN which is growing m-plane InN and In-rich m-plane InGaN on LiA1O2 (100) substrate by the metal organic chemical vapor deposition (MOCVD), and m-plane is one kind of non-polarized-plane, In-rich denotes that the component of In x is higher than 0.3 in InxGa1−xN. The invention synthetically grows m-plane InN and In-rich m-plane InGaN using LiA1O2 (100) as substrate which will be disposed and the buffer by MOCVD. And the non-polarized-plane InN would be produced through choosing appropriate substrate and the technique condition of growth as well as using the design of buffer by MOCVD.

摘要翻译： 通过金属有机化学气相沉积（MOCVD）在LiAlO2（100）衬底上生长m面InN和富In m面InGaN的非极化面InN的一种生长方法，m面是一种 非极化平面，富In表示In x Ga 1-x N中In x的分量高于0.3。 本发明使用LiAlO 2（100）作为衬底并通过MOCVD进行缓冲，合成生长m面InN和富In m面InGaN。 而非极化平面InN将通过选择合适的衬底和生长的技术条件以及通过MOCVD使用缓冲液的设计来生产。

公开(公告)号：US20110237011A1

公开(公告)日：2011-09-29

申请号：US12748462

申请日：2010-03-29

申请人： RONG ZHANG ,  ZILI XIE ,  BIN LIU ,  MING LI ,  XIANGQIAN XIU ,  DEYI FU ,  XUEMEI HUA ,  HONG ZHAO ,  PENG CHEN ,  PING HAN ,  YOUDOU ZHENG

发明人： RONG ZHANG ,  ZILI XIE ,  BIN LIU ,  MING LI ,  XIANGQIAN XIU ,  DEYI FU ,  XUEMEI HUA ,  HONG ZHAO ,  PENG CHEN ,  PING HAN ,  YOUDOU ZHENG

IPC分类号： H01L21/20

CPC分类号： H01L21/0262 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L33/007

摘要： This invention presents a growth method for GaN based quantum wells red light LED structure by MOCVD epitaxy growth system, GaN based GaN/InGaN quantum wells red light LED structure material is obtained. The In mole fraction (x) for quantum well material InGaN is controlled between 0.1 and 0.5. This invention realizes the lumiscience of long wave length red light in group III nitrides. Aiming at the problem of difficulty in growing high In composition InGaN material, this invention solves this problem by controlling and adjusting the flux of organic Ga source and In source, growth temperature, time, and the flux of ammonia, and the mole ratio of N to Ga. By strictly controlling the conditions such as temperature and the flux ratio of reactant in the whole process, this invention determines the radiation wave length of quantum well, realizes the lumiscience of long wave length, and obtained GaN based GaN/InGaN quantum well red light LED structure.

摘要翻译： 本发明提出了通过MOCVD外延生长系统，GaN基GaN / InGaN量子阱红光LED结构材料的GaN基量子阱红光LED结构的生长方法。 量子阱材料InGaN的In摩尔分数（x）控制在0.1和0.5之间。 本发明实现了III类氮化物中长波长红光的光学。 针对难以生长高In组成InGaN材料的问题，本发明通过控制和调节有机Ga源的流量和源，生长温度，时间和氨流量来解决这个问题，并且N 通过严格控制整个过程中反应物的温度和通量比等条件，本发明确定了量子阱的辐射波长，实现了长波长的光学，并获得了GaN基GaN / InGaN量子阱 红光LED结构。