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    Growth Method of Non-Polarized-Plane InN
    1.
    发明申请
    Growth Method of Non-Polarized-Plane InN 审中-公开
    非极化平面InN的生长方法

    公开(公告)号：US20100288190A1

    公开(公告)日：2010-11-18

    申请号：US12748435

    申请日：2010-03-28

    申请人： RONG ZHANG ,  ZILI XIE ,  BIN LIU ,  XIANGQIAN XIU ,  HONG ZHAO ,  XUEMEI HUA ,  PING HAN ,  DEYI FU ,  YI SHI ,  YOUDOU ZHENG

    发明人： RONG ZHANG ,  ZILI XIE ,  BIN LIU ,  XIANGQIAN XIU ,  HONG ZHAO ,  XUEMEI HUA ,  PING HAN ,  DEYI FU ,  YI SHI ,  YOUDOU ZHENG

    IPC分类号： C30B25/10 ,  C30B25/02

    CPC分类号： C23C16/303 ,  C23C16/0218 ,  C30B25/183 ,  C30B25/186 ,  C30B29/403

    摘要： A kind of growth method of non-polarized-plane InN which is growing m-plane InN and In-rich m-plane InGaN on LiA1O2 (100) substrate by the metal organic chemical vapor deposition (MOCVD), and m-plane is one kind of non-polarized-plane, In-rich denotes that the component of In x is higher than 0.3 in InxGa1−xN. The invention synthetically grows m-plane InN and In-rich m-plane InGaN using LiA1O2 (100) as substrate which will be disposed and the buffer by MOCVD. And the non-polarized-plane InN would be produced through choosing appropriate substrate and the technique condition of growth as well as using the design of buffer by MOCVD.

    摘要翻译： 通过金属有机化学气相沉积（MOCVD）在LiAlO2（100）衬底上生长m面InN和富In m面InGaN的非极化面InN的一种生长方法，m面是一种 非极化平面，富In表示In x Ga 1-x N中In x的分量高于0.3。 本发明使用LiAlO 2（100）作为衬底并通过MOCVD进行缓冲，合成生长m面InN和富In m面InGaN。 而非极化平面InN将通过选择合适的衬底和生长的技术条件以及通过MOCVD使用缓冲液的设计来生产。

    Method for Forming a GaN-Based Quantum-Well LED with Red Light
    2.
    发明申请
    Method for Forming a GaN-Based Quantum-Well LED with Red Light 审中-公开
    用红光形成GaN基量子阱LED的方法

    公开(公告)号：US20110237011A1

    公开(公告)日：2011-09-29

    申请号：US12748462

    申请日：2010-03-29

    申请人： RONG ZHANG ,  ZILI XIE ,  BIN LIU ,  MING LI ,  XIANGQIAN XIU ,  DEYI FU ,  XUEMEI HUA ,  HONG ZHAO ,  PENG CHEN ,  PING HAN ,  YOUDOU ZHENG

    发明人： RONG ZHANG ,  ZILI XIE ,  BIN LIU ,  MING LI ,  XIANGQIAN XIU ,  DEYI FU ,  XUEMEI HUA ,  HONG ZHAO ,  PENG CHEN ,  PING HAN ,  YOUDOU ZHENG

    IPC分类号： H01L21/20

    CPC分类号： H01L21/0262 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L33/007

    摘要： This invention presents a growth method for GaN based quantum wells red light LED structure by MOCVD epitaxy growth system, GaN based GaN/InGaN quantum wells red light LED structure material is obtained. The In mole fraction (x) for quantum well material InGaN is controlled between 0.1 and 0.5. This invention realizes the lumiscience of long wave length red light in group III nitrides. Aiming at the problem of difficulty in growing high In composition InGaN material, this invention solves this problem by controlling and adjusting the flux of organic Ga source and In source, growth temperature, time, and the flux of ammonia, and the mole ratio of N to Ga. By strictly controlling the conditions such as temperature and the flux ratio of reactant in the whole process, this invention determines the radiation wave length of quantum well, realizes the lumiscience of long wave length, and obtained GaN based GaN/InGaN quantum well red light LED structure.

    摘要翻译： 本发明提出了通过MOCVD外延生长系统，GaN基GaN / InGaN量子阱红光LED结构材料的GaN基量子阱红光LED结构的生长方法。 量子阱材料InGaN的In摩尔分数（x）控制在0.1和0.5之间。 本发明实现了III类氮化物中长波长红光的光学。 针对难以生长高In组成InGaN材料的问题，本发明通过控制和调节有机Ga源的流量和源，生长温度，时间和氨流量来解决这个问题，并且N 通过严格控制整个过程中反应物的温度和通量比等条件，本发明确定了量子阱的辐射波长，实现了长波长的光学，并获得了GaN基GaN / InGaN量子阱 红光LED结构。

    METHOD AND APPARATUS FOR A DELAYED AND PROLONGED AIR COOLING CONDENSATION SYSTEM
    3.
    发明申请
    METHOD AND APPARATUS FOR A DELAYED AND PROLONGED AIR COOLING CONDENSATION SYSTEM 审中-公开
    延迟和延长空气冷却冷凝系统的方法和装置

    公开(公告)号：US20130240188A1

    公开(公告)日：2013-09-19

    申请号：US13610661

    申请日：2012-09-11

    申请人： XIAO DONG XIANG ,  RONG ZHANG

    发明人： XIAO DONG XIANG ,  RONG ZHANG

    IPC分类号： F28D20/00

    CPC分类号： F28D20/00 ,  F28B1/06 ,  F28D20/02 ,  F28F5/00 ,  F28F2265/00 ,  Y02E60/145

    摘要： In various embodiments devices and methods are provided for an improved dry-cooling condensation system. In certain embodiments the methods involve receiving steam from a source of steam (e.g., a power plant); condensing the steam into water while transferring the latent heat of the steam into the latent heat of a thermal storage material; and dissipating the latent heat from the thermal storage material at a later time when the ambient temperature is lower than the ambient temperature at the time the steam was condensed into water.

    摘要翻译： 在各种实施例中，为改进的干冷缩冷凝系统提供了装置和方法。 在某些实施方案中，所述方法涉及从蒸汽源（例如发电厂）接收蒸汽; 将蒸汽冷凝成水，同时将蒸汽的潜热转移到储热材料的潜热中; 并且当环境温度低于蒸汽冷凝成水时的环境温度时，在稍后的时间消散来自储热材料的潜热。