公开(公告)号：US4824009A

公开(公告)日：1989-04-25

申请号：US336246

申请日：1981-12-31

申请人： Raj N. Master ,  Marvin S. Pittler ,  Paul A. Totta ,  Norman G. Ainslie ,  Paul H. Palmateer

发明人： Raj N. Master ,  Marvin S. Pittler ,  Paul A. Totta ,  Norman G. Ainslie ,  Paul H. Palmateer

IPC分类号： B23K1/20 ,  H01L21/48 ,  H01L23/498 ,  H01L23/50 ,  H05K3/24 ,  H05K3/34 ,  B23K31/02

CPC分类号： H01L23/49811 ,  H01L21/4853 ,  H01L2924/15312 ,  H05K3/245 ,  H05K3/3463

摘要： In the process of braze attachment of electronic package members, such as attaching metallic coated connector pins to a multilayer ceramic substrate, contact areas of the substrate are formed by sequential coatings of molybdenum and nickel, which are heated to diffuse the nickel. A pure gold paste is applied by screen printing, for example, followed by the step of firing to burn out the paste binder and to sinter the pure gold particles onto a dense low porosity structure. The sintering operation converts the Ni film into a continuous Au-Ni solid solution. During pin braze, Ni-Sn intermetallics are dispersed in a gold rich matrix of the Au-Ni solid solution.

摘要翻译： 在诸如将金属涂覆的连接器引脚连接到多层陶瓷基板的电子封装构件的钎焊附接的过程中，基板的接触区域由钼和镍的顺序涂层形成，其被加热以扩散镍。 例如通过丝网印刷施加纯金膏，然后进行煅烧步骤以烧尽糊状粘合剂并将纯金颗粒烧结到致密的低孔隙结构上。 烧结操作将Ni膜转变为连续的Au-Ni固溶体。 在引脚钎焊过程中，Ni-Sn金属间化合物分散在Au-Ni固溶体的富含金的基质中。

公开(公告)号：US4040891A

公开(公告)日：1977-08-09

申请号：US701068

申请日：1976-06-30

申请人： Kenneth Chang ,  Marvin S. Pittler

发明人： Kenneth Chang ,  Marvin S. Pittler

IPC分类号： H01L21/30 ,  H01L21/027 ,  H01L21/306 ,  H01L21/3205 ,  H01L21/768 ,  C23F1/02

CPC分类号： H01L21/76804 ,  H01L21/0272 ,  H01L21/7688 ,  Y10S156/922 ,  Y10T156/11

摘要： In integrated circuit fabrication a method is provided involving the utilization of the same positive photoresist layer to form two different masks used in two separate etching steps. A positive photoresist layer is formed on a substrate, and portions of the positive photoresist layer are selectively exposed and developed to form the photoresist mask having a pattern of openings therethrough exposing the underlying substrate. Then, the substrate exposed in these openings is etched to form the pattern of recesses in the substrate corresponding to the openings. Next, portions of the remaining photoresist layer respectively adjacent to openings in the photoresist layer are exposed and developed to laterally expand such openings, after which the substrate exposed in these expanded openings is etched whereby the portions of the recesses underlying the original openings are etched deeper than the portions of the recesses underlying the expanded portions of said openings. The result is a two-level recess pattern.In accordance with an important aspect of the disclosure, the substrate being etched is a layer of electrically insulative material formed over an integrated semiconductor circuit member, and the deeper portions of the recesses are etched completely through the insulative layer to form holes which may be used for the passage of contacts to a semiconductor substrate where the insulative layer is directly on the substrate or as via holes when the insulative layer is formed between two layers of integrated circuit metallurgy.

摘要翻译： 在集成电路制造中，提供了涉及利用相同的正性光致抗蚀剂层形成在两个单独的蚀刻步骤中使用的两种不同掩模的方法。 正性光致抗蚀剂层形成在衬底上，并且正性光致抗蚀剂层的部分被选择性地曝光和显影，以形成具有通过其暴露下方衬底的开口图案的光致抗蚀剂掩模。 然后，在这些开口中暴露的基板被蚀刻以形成对应于开口的基板中的凹槽的图案。 接下来，暴露并显影分别邻近光致抗蚀剂层中的开口的剩余光致抗蚀剂层的部分以横向扩展这样的开口，然后蚀刻在这些扩展的开口中暴露的基板，由此蚀刻原始开口下方的凹部的部分被更深地蚀刻 比在所述开口的扩展部分下面的凹部的部分。 结果是一个两层凹槽图案。