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    Polyelectrolyte nanolayers as diffusion barriers in semiconductor devices
    7.
    发明授权
    Polyelectrolyte nanolayers as diffusion barriers in semiconductor devices 有权
    聚电解质纳米粒子作为半导体器件中的扩散阻挡层

    公开(公告)号：US07081674B2

    公开(公告)日：2006-07-25

    申请号：US10866005

    申请日：2004-06-11

    申请人： Ramanath Ganapathiraman ,  Ravindra S. Kane ,  Gopal Ganesan Pethuraja

    发明人： Ramanath Ganapathiraman ,  Ravindra S. Kane ,  Gopal Ganesan Pethuraja

    IPC分类号： H01L23/48

    CPC分类号： H01L21/02118 ,  H01L21/02282 ,  H01L21/288 ,  H01L21/312 ,  H01L21/32051 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76841 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention provides a diffusion barrier useful in an integrated circuit, which serves to prevent the migration of material from a conductive layer to the underlying substrate and further provides improved adhesion of the conductive layer to the substrate. The diffusion barrier comprises a polymer which is a polyelectrolyte, having both cationic and anionic groups along its backbone chain. Preferred polyelectolyte barriers are polyethyleneimine (PEI) and polyacrylic acid (PAA). Other polyelectrolytes may be used, such as those that contain SH—OH— aromatic groups, or those that can interact with either the metal or the adjacent layers via covalent interactions and cross-linking (e.g., POMA, PSMA). The polymeric layer may be applied in two coatings, so that the amine side chains contact the dielectric (e.g. silicon) substrate and the acidic groups are adjacent to the overlying metallic interconnect (e.g. copper). The diffusion barrier may be made thin, preferably less than 5 nm thick, which is advantageous in devices having high aspect ratios.

    摘要翻译： 本发明提供了在集成电路中有用的扩散阻挡层，其用于防止材料从导电层迁移到下面的衬底，并进一步提供导电层与衬底的改善的粘合性。 扩散阻挡层包括聚合物，其是聚电解质，沿其主链具有阳离子和阴离子基团。 优选的聚电解质屏障是聚乙烯亚胺（PEI）和聚丙烯酸（PAA）。 可以使用其它聚电解质，例如含有SH-OH-芳族基团的聚电解质，或可以通过共价相互作用和交联（例如，POMA，PSMA）与金属或相邻层相互作用的那些。 聚合物层可以施加在两个涂层中，使得胺侧链接触电介质（例如硅）衬底，并且酸性基团与上覆的金属互连（例如铜）相邻。 可以使扩散阻挡层变薄，优选小于5nm厚，这在具有高纵横比的器件中是有利的。

    Polyelectrolyte nanolayers as diffusion barriers in semiconductor devices
    8.
    发明申请
    Polyelectrolyte nanolayers as diffusion barriers in semiconductor devices 有权
    聚电解质纳米粒子作为半导体器件中的扩散阻挡层

    公开(公告)号：US20050001317A1

    公开(公告)日：2005-01-06

    申请号：US10866005

    申请日：2004-06-11

    申请人： Ramanath Ganapathiraman ,  Ravindra Kane ,  Gopal Pethuraja

    发明人： Ramanath Ganapathiraman ,  Ravindra Kane ,  Gopal Pethuraja

    IPC分类号： H01L21/288 ,  H01L21/312 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/532 ,  H01L21/20

    CPC分类号： H01L21/02118 ,  H01L21/02282 ,  H01L21/288 ,  H01L21/312 ,  H01L21/32051 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76841 ,  H01L23/53238 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention provides a diffusion barrier useful in an integrated circuit, which serves to prevent the migration of material from a conductive layer to the underlying substrate and further provides improved adhesion of the conductive layer to the substrate. The diffusion barrier comprises a polymer which is a polyelectrolyte, having both cationic and anionic groups along its backbone chain. Preferred polyelectolyte barriers are polyethyleneimine (PEI) and polyacrylic acid (PAA). Other polyelectrolytes may be used, such as those that contain SH— OH— aromatic groups, or those that can interact with either the metal or the adjacent layers via covalent interactions and cross-linking (e.g., POMA, PSMA). The polymeric layer may be applied in two coatings, so that the amine side chains contact the dielectric (e.g. silicon) substrate and the acidic groups are adjacent to the overlying metallic interconnect (e.g. copper). The diffusion barrier may be made thin, preferably less than 5 nm thick, which is advantageous in devices having high aspect ratios.

    摘要翻译： 本发明提供了在集成电路中有用的扩散阻挡层，其用于防止材料从导电层迁移到下面的衬底，并进一步提供导电层与衬底的改善的粘合性。 扩散阻挡层包括聚合物，其是聚电解质，沿其主链具有阳离子和阴离子基团。 优选的聚电解质屏障是聚乙烯亚胺（PEI）和聚丙烯酸（PAA）。 可以使用其它聚电解质，例如含有SH-OH-芳族基团的聚电解质，或者可以通过共价相互作用和交联（例如，POMA，PSMA）与金属或相邻层相互作用的那些。 聚合物层可以施加在两个涂层中，使得胺侧链接触电介质（例如硅）衬底，并且酸性基团与上覆的金属互连（例如铜）相邻。 可以使扩散阻挡层变薄，优选小于5nm厚，这在具有高纵横比的器件中是有利的。