On-Die Termination of Address and Command Signals

    公开(公告)号:US20230016728A1

    公开(公告)日:2023-01-19

    申请号:US17954223

    申请日:2022-09-27

    Applicant: Rambus Inc.

    Abstract: A memory device includes a set of inputs, and a first register that includes a first register field to store a value for enabling application of one of a plurality of command/address (CA) on-die termination (ODT) impedance values to first inputs that receive the CA signals; a second register field to store a value for enabling application of one of a plurality of chip select (CS) ODT impedance values to a second input that receives the CS signal; and a third register field to store a value for enabling application of a clock (CK) ODT impedance value to third inputs that receive the CK signal. The memory device also includes second and third registers to store values for selecting one of the plurality of CA ODT impedance values and one of the plurality of CS ODT impedance values for application to the first inputs and second input, respectively.

    Coordinating memory operations using memory-device-generated reference signals

    公开(公告)号:US11341067B2

    公开(公告)日:2022-05-24

    申请号:US16987472

    申请日:2020-08-07

    Applicant: Rambus Inc.

    Abstract: A memory system includes a memory controller coupled to multiple memory devices. Each memory device includes an oscillator that generates an internal reference signal that oscillates at a frequency that is a function of physical device structures within the memory device. The frequencies of the internal reference signals are thus device specific. Each memory device develops a shared reference signal from its internal reference signal and communicates the shared reference signal to the common memory controller. The memory controller uses the shared reference signals to recover device-specific frequency information from each memory device, and then communicates with each memory device at a frequency compatible with the corresponding internal reference signal.

    Memory system topologies including a memory die stack

    公开(公告)号:US11328764B2

    公开(公告)日:2022-05-10

    申请号:US17323889

    申请日:2021-05-18

    Applicant: Rambus Inc.

    Abstract: Systems, among other embodiments, include topologies (data and/or control/address information) between an integrated circuit buffer device (that may be coupled to a master, such as a memory controller) and a plurality of integrated circuit memory devices. For example, data may be provided between the plurality of integrated circuit memory devices and the integrated circuit buffer device using separate segmented (or point-to-point link) signal paths in response to control/address information provided from the integrated circuit buffer device to the plurality of integrated circuit buffer devices using a single fly-by (or bus) signal path. An integrated circuit buffer device enables configurable effective memory organization of the plurality of integrated circuit memory devices. The memory organization represented by the integrated circuit buffer device to a memory controller may be different than the actual memory organization behind or coupled to the integrated circuit buffer device. The buffer device segments and merges the data transferred between the memory controller that expects a particular memory organization and actual memory organization.

    Memory Error Detection
    8.
    发明申请

    公开(公告)号:US20220138042A1

    公开(公告)日:2022-05-05

    申请号:US17481246

    申请日:2021-09-21

    Applicant: Rambus Inc.

    Abstract: Systems and methods are provided for detecting and correcting address errors in a memory system. In the memory system, a memory device generates an error-detection code based on an address transmitted via an address bus and transmits the error-detection code to a memory controller. The memory controller transmits an error indication to the memory device in response to the error-detection code. The error indication causes the memory device to remove the received address and prevent a memory operation

    Protocol including a command-specified timing reference signal

    公开(公告)号:US10970240B2

    公开(公告)日:2021-04-06

    申请号:US16405421

    申请日:2019-05-07

    Applicant: Rambus Inc.

    Abstract: Apparatus and methods for operation of a memory controller, memory device and system are described. During operation, the memory controller transmits a read command which specifies that a memory device output data accessed from a memory core. This read command contains information which specifies whether the memory device is to commence outputting of a timing reference signal prior to commencing outputting of the data. The memory controller receives the timing reference signal if the information specified that the memory device output the timing reference signal. The memory controller subsequently samples the data output from the memory device based on information provided by the timing reference signal output from the memory device.

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