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    Systems and methods that employ exposure compensation to provide uniform CD control on reticle during fabrication
    1.
    发明授权
    Systems and methods that employ exposure compensation to provide uniform CD control on reticle during fabrication 失效
    使用曝光补偿的系统和方法在制造过程中对掩模版提供均匀的CD控制

    公开(公告)号：US07187796B1

    公开(公告)日：2007-03-06

    申请号：US10676613

    申请日：2003-10-01

    申请人： Khoi A. Phan ,  Ramkumar Subramanian ,  Bhanwar Singh

    发明人： Khoi A. Phan ,  Ramkumar Subramanian ,  Bhanwar Singh

    IPC分类号： G06K9/00

    CPC分类号： B82Y40/00 ,  B82Y10/00 ,  G03F1/78 ,  H01J37/3174

    摘要： The present invention relates to monitoring and controlling a reticle fabrication process (e.g. employed with an electron beam lithography process). A typical fabrication process involves discrete stages including exposure, post-exposure bake and development. After fabrication is complete, an inspection can be performed on the reticle to determine whether any parameters during fabrication and/or any data points are outside of acceptable tolerances. The data is collected and fed into an algorithm (e.g. data-mining algorithm) utilized to determine which fabrication parameters need to be modified then sends the data to a control system (e.g. advanced process control) to facilitate needed changes to the fabrication parameters.

    摘要翻译： 本发明涉及监测和控制掩模版制造工艺（例如采用电子束光刻工艺）。 典型的制造过程涉及离散阶段，包括曝光，曝光后烘烤和显影。 制造完成后，可以对掩模版进行检查，以确定制造期间和/或任何数据点中的任何参数是否超出可接受的公差。 收集数据并将其馈送到用于确定哪些制造参数需要被修改的算法（例如数据挖掘算法）中，然后将数据发送到控制系统（例如高级过程控制），以便于对制造参数的所需改变。

    Refractive index system monitor and control for immersion lithography
    2.
    发明授权
    Refractive index system monitor and control for immersion lithography 有权
    折射率系统监测和控制浸没光刻

    公开(公告)号：US06999254B1

    公开(公告)日：2006-02-14

    申请号：US10967845

    申请日：2004-10-18

    申请人： Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Ramkumar Subramanian

    发明人： Khoi A. Phan ,  Bharath Rangarajan ,  Bhanwar Singh ,  Ramkumar Subramanian

    IPC分类号： G02B7/00

    CPC分类号： G03F7/70341

    摘要： A system and/or method are disclosed for measuring and/or controlling refractive index (n) and/or lithographic constant (k) of an immersion medium utilized in connection with immersion lithography. A known grating structure is built upon a substrate. A refractive index monitoring component facilitates measuring and/or controlling the immersion medium by utilizing detected light scattered from the known grating structure.

    摘要翻译： 公开了用于测量和/或控制与浸没式光刻相关联的浸渍介质的折射率（n）和/或光刻常数（k）的系统和/或方法。 已知的光栅结构被构建在衬底上。 折射率监测部件通过利用从已知光栅结构散射的检测光，便于测量和/或控制浸没介质。

    System and method to monitor reticle heating
    3.
    发明授权
    System and method to monitor reticle heating 有权
    监控标线加热的系统和方法

    公开(公告)号：US06809793B1

    公开(公告)日：2004-10-26

    申请号：US10050456

    申请日：2002-01-16

    申请人： Khoi A. Phan ,  Bhanwar Singh ,  Ramkumar Subramanian ,  Bharath Rangarajan

    发明人： Khoi A. Phan ,  Bhanwar Singh ,  Ramkumar Subramanian ,  Bharath Rangarajan

    IPC分类号： G03B2752

    CPC分类号： G03F7/70558 ,  G03F7/70875

    摘要： A system and method are disclosed which enable temperature of a substrate, such as mask or reticle, to be monitored and/or regulated. One or more temperature sensors are associated with the substrate to sense substrate temperature during exposure by an exposing source. The sensed temperature is used to control one or more process parameters of the exposure to help maintain the substrate at or below a desired temperature.

    摘要翻译： 公开了一种能够监测和/或调节衬底（例如掩模或掩模版）的温度的系统和方法。 一个或多个温度传感器与衬底相关联以在曝光源曝光期间检测衬底温度。 所感测的温度用于控制曝光的一个或多个工艺参数，以帮助将衬底维持在或低于所需温度。

    Using localized ionizer to reduce electrostatic charge from wafer and mask
    4.
    发明授权
    Using localized ionizer to reduce electrostatic charge from wafer and mask 有权
    使用局部电离器来减少晶片和掩模的静电电荷

    公开(公告)号：US06507474B1

    公开(公告)日：2003-01-14

    申请号：US09597126

    申请日：2000-06-19

    申请人： Bhanwar Singh ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Bryan K. Choo ,  Bharath Rangarajan

    发明人： Bhanwar Singh ,  Ramkumar Subramanian ,  Khoi A. Phan ,  Bryan K. Choo ,  Bharath Rangarajan

    IPC分类号： H01T2300

    CPC分类号： G03F7/70616 ,  G03F7/70941

    摘要： One aspect of the present invention elates to a method of reducing electrostatic charges on a patterned photoresist to improve evaluation of the developed photoresist, involving the steps of evaluating the patterned photoresist to determine if electrostatic charges exist thereon; positioning an ionizer near the patterned photoresist, the ionizer generating ions thereby reducing the electrostatic charges on the patterned photoresist; and evaluating the patterned photoresist with an electron beam. Another aspect of the present invention relates to a system for reducing electrostatic charges on a patterned photoresist, containing a charge sensor for determining if electrostatic charges exist on the patterned photoresist and measuring the electrostatic charges; an ionizer positioned near the patterned photoresist having electrostatic charges thereon for reducing the electrostatic charges on the patterned photoresist; a controller for setting at least one of time of ion generation and amount of ion generation by the ionizer, the controller coupled to the charge sensor and the ionizer; and a scanning electron microscope or an atomic force microscope for evaluating the patterned photoresist having reduced electrostatic charges thereon with an electron beam.

    摘要翻译： 本发明的一个方面是提供减少图案化光致抗蚀剂上的静电电荷以改进对显影光致抗蚀剂的评估的方法，包括评估图案化光致抗蚀剂以确定静电电荷是否存在于其中的步骤; 在图案化的光致抗蚀剂附近定位电离器，离子发生器产生离子，从而减少图案化光致抗蚀剂上的静电电荷; 并用电子束评估图案化的光致抗蚀剂。 本发明的另一方面涉及一种用于减少图案化光致抗蚀剂上的静电电荷的系统，其包含用于确定图案化光致抗蚀剂上是否存在静电电荷并测量静电电荷的电荷传感器; 位于图案化的光致抗蚀剂附近的电离器，其上具有静电电荷，用于减少图案化光致抗蚀剂上的静电电荷; 用于设置离子发生时间和离子发生量中的至少一个的控制器，耦合到电荷传感器和离子发生器的控制器; 以及扫描电子显微镜或原子力显微镜，用于用电子束评估其上具有降低的静电电荷的图案化光致抗蚀剂。

    Systems and methods of imprint lithography with adjustable mask
    8.
    发明授权
    Systems and methods of imprint lithography with adjustable mask 有权
    带可调面罩的压印光刻系统和方法

    公开(公告)号：US07295288B1

    公开(公告)日：2007-11-13

    申请号：US11000869

    申请日：2004-12-01

    申请人： Ramkumar Subramanian ,  Bhanwar Singh ,  Khoi A. Phan

    发明人： Ramkumar Subramanian ,  Bhanwar Singh ,  Khoi A. Phan

    IPC分类号： G03B27/62 ,  G03B27/02 ,  G03B27/20

    CPC分类号： G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

    摘要： Systems and methodologies are provided that account for surface variations of a wafer by adjusting grating features of an imprint lithography mask. Such adjustment employs piezoelectric elements as part of the mask, which can change dimensions (e.g., a height change) and/or move when subjected to an electric voltage. Accordingly, by regulating the amount of electric voltage applied to the piezoelectric elements a controlled expansion for such elements can be obtained, to accommodate for topography variations of the wafer surface.

    摘要翻译： 提供了通过调节压印光刻掩模的光栅特征来考虑晶片的表面变化的系统和方法。 这种调节使用压电元件作为掩模的一部分，其可以在经受电压时改变尺寸（例如，高度变化）和/或移动。 因此，通过调节施加到压电元件的电压量，可以获得这些元件的受控膨胀，以适应晶片表面的形貌变化。

    Using scatterometry to detect and control undercut for ARC with developable BARCs
    10.
    发明授权
    Using scatterometry to detect and control undercut for ARC with developable BARCs 失效
    使用散射法检测和控制ARC的可切割BARC的底切

    公开(公告)号：US06972201B1

    公开(公告)日：2005-12-06

    申请号：US10755794

    申请日：2004-01-12

    申请人： Ramkumar Subramanian ,  Bhanwar Singh ,  Khoi A. Phan

    发明人： Ramkumar Subramanian ,  Bhanwar Singh ,  Khoi A. Phan

    IPC分类号： G03F7/09 ,  G03F7/30 ,  G03F7/38 ,  H01L21/00 ,  H01L21/027 ,  H01L21/66

    CPC分类号： G03F7/3028 ,  G03F7/091 ,  G03F7/38 ,  H01L21/0276 ,  H01L22/12

    摘要： Architecture for monitoring a bottom anti-reflective coating (BARC) undercut and residual portions thereof during a development stage using scatterometry. The scatterometry system monitors for BARC undercut and residual BARC material, and if detected, controls the process to minimize such effects in subsequent wafers. If one or more of such effects has exceeded a predetermined limit, the wafer is rerouted for further processing, which can include rework, etch back of the affected layer, or rejection of the wafer, for example.

    摘要翻译： 用于在使用散射测量的显影阶段期间监测底部抗反射涂层（BARC）底切及其残余部分的结构。 散射测量系统监测BARC底切和残留BARC材料，如果检测到，则控制该过程以使后续晶片中的这种影响最小化。 如果这种效应中的一个或多个已经超过预定限制，则晶片被重新路由以用于进一步处理，例如，其可以包括返工，受影响层的回蚀或晶片的拒绝。