公开(公告)号：US07170190B1

公开(公告)日：2007-01-30

申请号：US10738164

申请日：2003-12-16

申请人： Randolph E. Treur ,  John M. Boyd ,  Tom Anderson ,  John de Larios

发明人： Randolph E. Treur ,  John M. Boyd ,  Tom Anderson ,  John de Larios

IPC分类号： H01L23/58 ,  B08B6/00 ,  C25F1/00

CPC分类号： B08B1/04 ,  A46B13/04 ,  A46B2200/3086 ,  H01L21/02057 ,  H01L21/67046

摘要： An apparatus for brushing a surface of a substrate is provided. The apparatus includes a brush for scrubbing the surface of the substrate, a head for holding the brush, and an arm. The arm is configured to hold the head about a connection point. The arm is connected to an oscillating mechanism configured to cause the head to oscillate at an angle of rotation about the connection point.

摘要翻译： 提供了一种用于刷洗基片表面的装置。 该装置包括用于擦洗基板的表面的刷子，用于保持刷子的头部和臂。 臂被配置为围绕连接点保持头部。 臂连接到摆动机构，该摆动机构被配置为使头部以围绕连接点的旋转角度摆动。

公开(公告)号：US07040332B2

公开(公告)日：2006-05-09

申请号：US10377943

申请日：2003-02-28

申请人： John M. Boyd ,  Fred C. Redeker ,  Randolph E. Treur ,  William Thie

发明人： John M. Boyd ,  Fred C. Redeker ,  Randolph E. Treur ,  William Thie

IPC分类号： B08B3/12

CPC分类号： H01L21/67057 ,  B08B3/12 ,  Y10S134/902

摘要： A system for cleaning a substrate includes a tank defining an inner cavity between a base and sidewalls extending therefrom. A source of acoustic energy affixed to an outer surface of one of the sidewalls. The tank is configured to decouple a direction associated with the acoustic energy from the source of acoustic energy and direct the acoustic energy toward the substrate.

摘要翻译： 用于清洁基底的系统包括限定在基底和从其延伸的侧壁之间的内腔的罐。 声能源固定在一个侧壁的外表面上。 该箱被配置成将与声能相关联的方向与声能源分离，并将声能引导到基板。

公开(公告)号：US06488568B1

公开(公告)日：2002-12-03

申请号：US09712825

申请日：2000-11-14

申请人： Randolph E. Treur ,  John M. Boyd ,  Stephan H. Wolf

发明人： Randolph E. Treur ,  John M. Boyd ,  Stephan H. Wolf

IPC分类号： B24B722

CPC分类号： B24B37/013 ,  B24B49/12 ,  B24D7/12

摘要： An optical endpoint system for a CMP system with a viewport located off-center on the platen, said view port being adjustable in height so that the window of the viewport can be made flush with the top of the polishing pad.

摘要翻译： 一种用于CMP系统的光学终点系统，其具有位于压板上偏心的视口，所述视口可高度调节，使得视口的窗口可以与抛光垫的顶部齐平。

公开(公告)号：US06146242A

公开(公告)日：2000-11-14

申请号：US330472

申请日：1999-06-11

申请人： Randolph E. Treur ,  John M. Boyd ,  Stephan H. Wolf

发明人： Randolph E. Treur ,  John M. Boyd ,  Stephan H. Wolf

IPC分类号： B24B49/04 ,  B24B37/013 ,  B24B49/12 ,  B24D7/12 ,  H01L21/304 ,  B24B49/00

CPC分类号： B24B37/013 ,  B24B49/12 ,  B24D7/12

摘要： An optical endpoint system for a CMP system with a viewport located off-center on the platen, said view port being adjustable in height so that the window of the viewport can be made flush with the top of the polishing pad.

公开(公告)号：US07598175B2

公开(公告)日：2009-10-06

申请号：US12129612

申请日：2008-05-29

申请人： John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  John de Larios

发明人： John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  John de Larios

IPC分类号： H01L21/302

CPC分类号： H01L21/32115 ,  C25F7/00

摘要： A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

摘要翻译： 提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。 邻近头包括限定为维持电解质溶液的室。 在室内暴露于电解质溶液中设置阴极。 阳离子交换膜设置在室的下部开口的上方。 阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。 流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。 定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

公开(公告)号：US20080169008A1

公开(公告)日：2008-07-17

申请号：US11954167

申请日：2007-12-11

申请人： Seokmin Yun ,  John M. Boyd ,  Mark Wilcoxson ,  John de Larios

发明人： Seokmin Yun ,  John M. Boyd ,  Mark Wilcoxson ,  John de Larios

IPC分类号： B08B13/00

CPC分类号： H01L21/67028 ,  C23G1/00 ,  H01L21/67034 ,  H01L21/6704 ,  H01L21/67051 ,  Y10S134/902

摘要： A method for removing post-processing residues in a single wafer cleaning system is provided. The method initiates with providing a first heated fluid to a proximity head disposed over a substrate. Then, a meniscus of the first fluid is generated between a surface of the substrate and an opposing surface of the proximity head. The substrate is linearly moved under the proximity head. A single wafer cleaning system is also provided.

摘要翻译： 提供了一种用于去除单个晶片清洁系统中的后处理残留物的方法。 该方法通过向设置在基板上的接近头部提供第一加热流体而开始。 然后，在基板的表面和邻近头部的相对表面之间产生第一流体的弯月面。 基板在邻近头部下线性移动。 还提供单个晶片清洁系统。

公开(公告)号：US07264007B2

公开(公告)日：2007-09-04

申请号：US10611140

申请日：2003-06-30

申请人： John M. Boyd ,  Mike Ravkin ,  Fred C. Redeker ,  John de Larios

发明人： John M. Boyd ,  Mike Ravkin ,  Fred C. Redeker ,  John de Larios

IPC分类号： B08B3/12

CPC分类号： H01L21/67051 ,  C25D5/22 ,  C25D17/001 ,  H01L21/02041 ,  H01L21/02052 ,  H01L21/67028 ,  H01L21/67034 ,  H01L21/67046 ,  Y10S134/902

摘要： A method for processing a substrate is provided that includes generating a fluid meniscus on a surface of the substrate and applying acoustic energy to the fluid meniscus. The method also includes moving the fluid meniscus over the surface the substrate to process the surface of the substrate.

摘要翻译： 提供了一种用于处理衬底的方法，其包括在衬底的表面上产生流体弯月面并将声能施加到流体弯液面。 该方法还包括将流体弯液面移动到衬底的表面上以处理衬底的表面。

公开(公告)号：US20080227369A1

公开(公告)日：2008-09-18

申请号：US12129612

申请日：2008-05-29

申请人： John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  John de Larios

发明人： John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  John de Larios

IPC分类号： B24B57/02 ,  H05K3/07 ,  C25F3/00

CPC分类号： H01L21/32115 ,  C25F7/00

摘要： A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

摘要翻译： 提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。 邻近头包括限定为维持电解质溶液的室。 在室内暴露于电解质溶液中设置阴极。 阳离子交换膜设置在室的下部开口的上方。 阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。 流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。 定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

公开(公告)号：US07396430B2

公开(公告)日：2008-07-08

申请号：US11395881

申请日：2006-03-31

申请人： John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  John de Larios

发明人： John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  Michael Ravkin ,  John de Larios

IPC分类号： H01L21/306

CPC分类号： H01L21/32115 ,  C25F7/00

摘要： A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.

摘要翻译： 提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。 邻近头包括限定为维持电解质溶液的室。 在室内暴露于电解质溶液中设置阴极。 阳离子交换膜设置在室的下部开口的上方。 阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。 流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。 定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

公开(公告)号：US08691027B2

公开(公告)日：2014-04-08

申请号：US13670305

申请日：2012-11-06

申请人： Mikhail Korolik ,  Michael Ravkin ,  John de Larios ,  Fritz C. Redeker ,  John M. Boyd

发明人： Mikhail Korolik ,  Michael Ravkin ,  John de Larios ,  Fritz C. Redeker ,  John M. Boyd

IPC分类号： B08B3/00 ,  B08B7/00 ,  B08B7/04 ,  H01L21/67

CPC分类号： H01L21/67051 ,  G03F7/422 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/6704 ,  Y10S134/902

摘要： A pressure is maintained within a volume within which a semiconductor wafer resides at a pressure that is sufficient to maintain a liquid state of a precursor fluid to a non-Newtonian fluid. The precursor fluid is disposed proximate to a material to be removed from the semiconductor wafer while maintaining the precursor fluid in the liquid state. The pressure is reduced in the volume within which the semiconductor wafer resides such that the precursor fluid disposed on the wafer within the volume is transformed into the non-Newtonian fluid. An expansion of the precursor fluid and movement of the precursor fluid relative to the wafer during transformation into the non-Newtonian fluid causes the resulting non-Newtonian fluid to remove the material from the semiconductor wafer.

摘要翻译： 压力保持在其中半导体晶片所处于的体积内的压力足以将前体流体的液体状态保持为非牛顿流体。 前体流体靠近要从半导体晶片去除的材料设置，同时保持前体流体处于液态。 在半导体晶片所在的体积中的压力降低，使得设置在体积内的晶片上的前体流体被转化成非牛顿流体。 在转化成非牛顿流体期间，前体流体的膨胀和前体流体相对于晶片的移动导致所得到的非牛顿流体从半导体晶片中去除材料。