摘要:
Metal pastes used in the fabrication of multilayer ceramic (MLC) substrates used in semiconductor devices. The pastes reduce substrate defects, such as via bulge and camber. The pastes are comprised of a metal having high conductivity, frit which includes glass, an organic binder, and a solvent, optionally with a surfactant.
摘要:
Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.
摘要:
Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.
摘要:
A single furnace loading cycle technique and a ventable sintering box therefor are disclosed for the sintering of products, such as, ceramic substrates. The sintering box includes a closeable cover which is held open by collapsible or deformable or sensitive spacers in a first furnace temperature range. The sensitive spacers collapse or deform in a higher temperature range to seal closed the box and the substrates therein. Additional spacers may be used for applying weight upon the substrates at the higher temperature range. Thus, volatile agents within the substrates are permitted to escape in the first temperature range but are prevented from escaping in the higher temperature range and in situ sintering weights can be applied without removing the substrates from the furnace.
摘要:
Electronic packages made with a high area percent coverage of blanket metal may be prone to certain kinds of ceramic defects. In aluminum nitride, these defects may be related to decomposition of the liquid sintering aid. In this experiment, unique additions to the metallization prevented the formation of certain ceramic defects. Our approach involves a unique composition used in an existing process.
摘要:
Electronic packages made with a high area percent coverage of blanket metal may be prone to certain kinds of ceramic defects. In aluminum nitride, these defects may be related to decomposition of the liquid sintering aid. In this experiment, unique additions to the metallization prevented the formation of certain ceramic defects. Our approach involves a unique composition used in an existing process.
摘要:
Electronic packages made with a high area percent coverage of blanket metal may be prone to certain kinds of ceramic defects. In aluminum nitride, these defects may be related to decomposition of the liquid sintering aid. In this experiment, unique additions to the metallization prevented the formation of certain ceramic defects. Our approach involves a unique composition used in an existing process.
摘要:
Method form via chain and serpentine/comb test structures in kerf areas of a wafer. The via chain test structures comprise a first via chain and a second via chain in a first kerf area. The via chain test structures are formed such that geometrically shaped portions of the first via chain and geometrically shaped portions of the second via chain alternate along the length of the first kerf area. The methods perform relatively low (first) magnification testing to identify a defective geometrically shaped portion that contains a defective via structure. The methods then perform relatively high (second) magnification testing only within the defective geometrically shaped portion. The first magnification testing is performed at a lower magnification relative to the second magnification testing.
摘要:
Thermoelectric devices having enhanced thermal characteristics are fabricated using multilayer ceramic (MLC) technology methods. Aluminum nitride faceplates with embedded electrical connections provide the electrical series configuration for alternating dissimilar semiconducting materials. Embedded electrical connections are formed by vias and lines in the faceplate. Methods for forming tunnels through lamination and etching are employed. A portion of the dissimilar materials are then melted within the tunnels to form a bond. Thermal conductivity of the faceplate is enhanced by adding electrically isolated vias to one surface, filled with high thermal conductivity metal paste. A low thermal conductivity material is also introduced between the two high thermal conductivity material faceplates. Alternating semiconducting materials are introduced within the varying thermal conductivity layers by punching vias within greensheets of predetermined thermal conductivity and filling with n-type and p-type paste. Alternating semiconducting materials may also be patterned in linear or radial fanout patterns through screening techniques and lamination of wire structures. A liquid channel within the faceplate is used to enhance thermal energy transfer. Thermoelectric devices are physically incorporated within the IC package using MLC technology.
摘要:
Preferred embodiments for methods of removing an integrated circuit (“IC”) from a substrate, where the IC is attached to the substrate by multiple solder connections are disclosed. One preferred embodiment of the inventive methods provides the steps of heating the IC and substrate to the reflow temperature for the solder connections and pulling the IC from the substrate by means of a vacuum force. Another preferred embodiment of the inventive method provides the step of shearing the IC from the substrate after the substrate and IC are heated, but before solder reflow temperature has been reached, and where the shearing force may be programmed through a computer controlled servomotor. Preferred embodiments of certain apparatus applying the inventive methods for removing an integrated circuit from a substrate are also disclosed. One preferred embodiment of the inventive apparatus includes a vented pallet to hold the substrate and IC and through which the vacuum force is applied to pull the IC from the substrate without the use of physical clamping or contact forces applied to the substrate or IC. In a further preferred embodiment of the inventive apparatus, shear elements are provided and used with a programmable servomotor for precisely controlling the forces applied to the substrate and IC as a function of time, temperature and translational distance.