Hot vacuum device removal process and apparatus
    1.
    发明授权
    Hot vacuum device removal process and apparatus 失效
    热真空装置拆除工艺及装置

    公开(公告)号:US5605277A

    公开(公告)日:1997-02-25

    申请号:US360100

    申请日:1994-12-20

    IPC分类号: B23K1/018

    CPC分类号: B23K1/018 B23K2201/40

    摘要: A cost efficient, highly reliable method to remove electronic devices and components from substrates eliminates separate tooling for every substrate and device or component size. The apparatus which implements the method allows for multiple device or component removal simultaneously, or in a single sequential operation, in a nondestructive action in a very low cost environment. A box oven and vacuum system and is used with different device or component and substrate sizes providing a simple, low cost, molten device removal procedure, eliminating the need for thermal monitor build and associated profiling for each product. The apparatus works independently of chip type or size, utilizing universal fixturing, and can be set up to pull multiple devices and/or components in a single run.

    摘要翻译: 从基板上去除电子设备和组件的成本效益高,可靠的方法消除了每个基板和设备或部件尺寸的单独的工具。 实现该方法的装置允许在非常低成本的环境中的非破坏性动作中同时进行多个装置或部件移除,或者在单个顺序操作中。 箱式烘箱和真空系统,并且使用不同的装置或部件和基板尺寸,提供简单,低成本的熔融装置移除程序,消除了对每个产品的热监测器构建和相关的分析的需要。 该设备独立于芯片类型或尺寸,利用通用的固定方式工作,并可设置为在单次运行中拉出多个设备和/或组件。

    In-situ device removal for multi-chip modules
    2.
    发明授权
    In-situ device removal for multi-chip modules 失效
    多芯片模块的原位设备拆除

    公开(公告)号:US5553766A

    公开(公告)日:1996-09-10

    申请号:US342563

    申请日:1994-11-21

    摘要: Deformation of a lifting ring of bimetallic structure or memory metal is matched to a solder softening or melting temperature to apply forces to lift a chip from a supporting structure, such as a substrate or multi-chip module, only when the solder connections between the chip and the supporting structure are softened or melted. The temperature of the chip, module and solder connections there between is achieved in a commercially available box oven or belt furnace or the like and results in much reduced internal chip temperatures and thermal gradients within the chip as compared to known hot chip removal processes. Tensile and/or shear forces at solder connections and chip and substrate contacts are much reduced in comparison with known cold chip removal processes. Accordingly, the process is repeatable at will without significant damage to or alteration of electrical characteristics of the chip or substrate.

    摘要翻译: 双金属结构或记忆金属的提升环的变形与焊料软化或熔化温度匹配,以施加力以从支撑结构(例如基板或多芯片模块)提升芯片,只有当芯片之间的焊料连接 支撑结构软化或熔化。 与市售的盒式炉或带式炉等相比,芯片,模块和焊料连接的温度是可以实现的,并且与已知的热切屑去除工艺相比,在芯片内的内部芯片温度和热梯度大大降低。 与已知的冷芯片去除工艺相比,焊料连接和芯片和基板触点处的拉伸和/或剪切力大大降低。 因此,该过程可以随意重复,而不会显着损坏或改变芯片或衬底的电特性。