公开(公告)号：US20060196525A1

公开(公告)日：2006-09-07

申请号：US11070994

申请日：2005-03-03

申请人： Raymond Vrtis ,  Aaron Lukas ,  Mark O'Neill ,  Mark Bitner ,  Xiaohai Xiang ,  Eugene Karwacki

发明人： Raymond Vrtis ,  Aaron Lukas ,  Mark O'Neill ,  Mark Bitner ,  Xiaohai Xiang ,  Eugene Karwacki

IPC分类号： B08B3/12

CPC分类号： C23C16/4405

摘要： A method for removing a residue from a surface is disclosed herein. In one aspect, the method includes: providing a chamber containing the surface coated with the residue; providing in the chamber a cleaning composition of an oxidizing gas and optionally an organic species; and irradiating the cleaning composition with ultraviolet light to remove the residue from the surface. The surface can be, for example, a window of a processing chamber. In certain aspects, a reflective surface can be located within close proximity to the window to enhance cleaning efficiency.

摘要翻译： 本文公开了从表面除去残余物的方法。 一方面，该方法包括：提供包含涂有残留物的表面的室; 在室中提供氧化气体和任选的有机物质的清洁组合物; 并用紫外线照射清洗组合物以从表面除去残留物。 表面可以是例如处理室的窗口。 在某些方面，反射表面可以位于靠近窗口的位置，以提高清洁效率。

公开(公告)号：US20060078676A1

公开(公告)日：2006-04-13

申请号：US11228223

申请日：2005-09-19

申请人： Aaron Lukas ,  Mark O'Neill ,  Eugene Karwacki ,  Raymond Vrtis ,  Jean Vincent

发明人： Aaron Lukas ,  Mark O'Neill ,  Eugene Karwacki ,  Raymond Vrtis ,  Jean Vincent

IPC分类号： C23C16/00 ,  B32B17/06 ,  B32B13/04 ,  B32B9/00 ,  B32B19/00

CPC分类号： C03C3/045 ,  C23C16/30 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/3122 ,  H01L21/31695 ,  Y10T428/31663

摘要： A porous organosilicate glass (OSG) film: SivOwCxHyFz, where v+w+x+y+z=100%, v is 10 to 35 atomic %, w is 10 to 65 atomic %, x is 5 to 30 atomic %, y is 10 to 50 atomic % and z is 0 to 15 atomic %, has a silicate network with carbon bonds as methyl groups (Si—CH3) and contains pores with diameter less than 3 nm equivalent spherical diameter and dielectric constant less than 2.7. A preliminary film is deposited by a chemical vapor deposition method from organosilane and/or organosiloxane precursors, and independent pore-forming precursors. Porogen precursors form pores within the preliminary film and are subsequently removed to provide the porous film. Compositions, film forming kits, include organosilane and/or organosiloxane compounds containing at least one Si—H bond and porogen precursors of hydrocarbons containing alcohol, ether, carbonyl, carboxylic acid, ester, nitro, primary amine, secondary amine, and/or tertiary amine functionality or combinations.

摘要翻译： 多孔有机硅酸盐玻璃（OSG）膜：其中，X，Y，X，Y， 其中v + w + x + y + z = 100％，v为10〜35原子％，w为10〜65原子％，x为5〜30原子％，y为10〜 z为0〜15原子％，具有作为甲基（Si-CH 3 3）的碳原子的硅酸盐网络，并且含有直径小于3nm的等效球径，介电常数小于2.7的孔 。 通过化学气相沉积法从有机硅烷和/或有机硅氧烷前体和独立的成孔前体沉积初步膜。 致孔剂前体在预备膜内形成孔，随后被除去以提供多孔膜。 组合物，成膜试剂盒包括含有至少一个Si-H键的有机硅烷和/或有机硅氧烷化合物，以及含有醇，醚，羰基，羧酸，酯，硝基，伯胺，仲胺和/或叔碳原子的烃的致孔剂前体 胺官能团或组合。

公开(公告)号：US20060027249A1

公开(公告)日：2006-02-09

申请号：US11178545

申请日：2005-07-12

申请人： Andrew Johnson ,  Hoshang Subawalla ,  Bing Ji ,  Raymond Vrtis ,  Eugene Karwacki ,  Robert Ridgeway ,  Peter Maroulis ,  Mark O'Neill ,  Aaron Lukas ,  Stephen Motika

发明人： Andrew Johnson ,  Hoshang Subawalla ,  Bing Ji ,  Raymond Vrtis ,  Eugene Karwacki ,  Robert Ridgeway ,  Peter Maroulis ,  Mark O'Neill ,  Aaron Lukas ,  Stephen Motika

IPC分类号： C25F5/00

CPC分类号： C23C16/4405

摘要： A process for removing carbon-containing residues from a substrate is described herein. In one aspect, there is provided a process for removing carbon-containing residue from at least a portion of a surface of a substrate comprising: providing a process gas comprising an oxygen source, a fluorine source, an and optionally additive gas wherein the molar ratio of oxygen to fluorine contained within the process gas ranges from about 1 to about 10; activating the process gas using at least one energy source to provide reactive species; and contacting the surface of the substrate with the reactive species to volatilize and remove the carbon-containing residue from the surface.