SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20140078709A1

    公开(公告)日:2014-03-20

    申请号:US14012324

    申请日:2013-08-28

    IPC分类号: H01L23/58

    摘要: To suppress the noise caused by an inductor leaks to the outside, and also to be configured such that magnetic field intensity change reaches the inductor.An inductor surrounds an internal circuit in a planar view and also is coupled electrically to the internal circuit. The upper side of the inductor is covered by an upper shield part and the lower side of the inductor is covered by a lower shield part. The upper shield part is formed by the use of a multilayered wiring layer. The upper shield part has plural first openings. The first opening overlaps the inductor in the planar view.

    摘要翻译: 为了抑制由电感器引起的噪声泄漏到外部,并且还被配置为使得磁场强度变化到达电感器。 电感器在平面视图中围绕内部电路,并且还与内部电路电连接。 电感器的上侧由上屏蔽部分覆盖,电感器的下侧由下屏蔽部分覆盖。 上部屏蔽部分通过使用多层布线层形成。 上部屏蔽部分具有多个第一开口。 第一个开口在平面视图中与电感器重叠。

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号:US20150048481A1

    公开(公告)日:2015-02-19

    申请号:US14527293

    申请日:2014-10-29

    IPC分类号: H01L23/522

    摘要: To suppress the noise caused by an inductor leaks to the outside, and also to be configured such that magnetic field intensity change reaches the inductor.An inductor surrounds an internal circuit in a planar view and also is coupled electrically to the internal circuit. The upper side of the inductor is covered by an upper shield part and the lower side of the inductor is covered by a lower shield part. The upper shield part is formed by the use of a multilayered wiring layer. The upper shield part has plural first openings. The first opening overlaps the inductor in the planar view.

    摘要翻译: 为了抑制由电感器引起的噪声泄漏到外部,并且还被配置为使得磁场强度变化到达电感器。 电感器在平面视图中围绕内部电路,并且还与内部电路电连接。 电感器的上侧由上屏蔽部分覆盖,电感器的下侧由下屏蔽部分覆盖。 上部屏蔽部分通过使用多层布线层形成。 上部屏蔽部分具有多个第一开口。 第一个开口在平面视图中与电感器重叠。